A novel antenna concept for double-directional channel measurements

In this paper, a novel concept for the characterization of the double-directional mobile radio channel is presented. It is based on a broad-band real-time channel-sounding device together with appropriate antenna arrays, thus forming a multiple-input-multiple-output system. For the propagation measurements within the 5.2-GHz wireless local area network band presented here, a uniform linear antenna array at the receiver site and a switched multibeam antenna at the transmitter site have been employed. By application of the multibeam antenna, the entire azimuthal range of 360/spl deg/ is covered without ambiguities. The measurement data obtained with this platform in a simple synthetic scenario, as well as in a typical multipath environment, is then analyzed in terms of the propagation path properties. Using the three-dimensional estimation of signal parameters via rotational invariance techniques algorithm together with a proper Fourier transform, the channel parameters of all relevant multipaths such as delay, direction of arrival, direction of departure, and path loss are extracted from the measurement data. For both scenarios, the obtained estimated paths are verified to the underlying physical propagation environment by means of geometrical considerations. This geometrical matching accounts for multipath components due to single-bounce as well as multiple-bounce reflections and demonstrates the high suitability and good performance of the proposed concept.     

2 MeV ion irradiation effects on AlGaN/GaN HFET devices

AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 10⁹ cm^?2 to 1 × 10¹³ cm^?2. DC, pulsed I–V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 10¹⁰ cm^?2. Remarkable changes in device characteristics were seen at a fluence of 1 × 10¹² cm^?2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 10¹² cm^?2. The results found on devices and on the GaN layer were compared and correlated.     

A Future Millimeter/Sub–Millimeter Radiometer for Satellite Observation of Ice Clouds

The instrument concept of a future spaceborne millimeter/sub-millimeter radiometer is proposed in this paper for the remote sensing of ice clouds from satellite. The proposed radiometer is expected to operate at a series of frequencies within the millimeter and sub-millimeter wave range from 150 to about 900 GHz. Five frequencies are selected in the atmospheric windows, i.e., 150, 220, 463, 683, 874 GHz, and at each frequency there are two orthogonally polarized channels. Three water vapor channels located close to 183.31 GHz are also included in this instrument, since they can provide water vapor information, which is needed for ice cloud parameter retrieval. To simplify system design and test, a modular design philosophy is followed in the receiver frontend design and two antennas are used separately for the millimeter and sub-millimeter channels. Overall, the instrument requirements can be met with today's technology, except for the channels at the highest frequencies, where the radiometric sensitivity can be larger than the required 1.0 K for the 10 km spatial resolution (2.5 ms integration time). However, this situation can be improved by averaging neighboring pixels in data processing if certain compromise in the spatial resolution can be made at these frequencies.     

Reverse short channel effects in high-k gated nMOSFETs

Anomalous threshold voltage roll-up behavior, commonly referred as reverse short channel effect (RSCE), has been observed in high-k (HfO₂ on SiON buffer, Al₂O₃ on SiON buffer) gated submicron nMOSFETs, while the SiO₂ or SiON control samples show normal short channel effect (SCE) behavior. The possible causes such as inhomogeneous channel doping profile and gate oxide thickness variation near S/D ends have been ruled out. The results indicate that interface trap density that dependents on channel length is the main cause of the RSCE observed here. In addition, oxide charge also plays a role.     

Fluoroscopy-based 3-D reconstruction of femoral bone cement: a new approach for revision total hip replacement

In revision total hip replacement the removal of the distal femoral bone cement can be a time consuming and risky operation due to the difficulty in determining the three-dimensional (3-D) boundary of the cement. We present a new approach to reconstruct the bone cement volume by using just a small number of calibrated multiplanar X-ray images. The modular system design allows the surgeon to react intraoperatively to problems arising during the individual situation. When encountering problems during conventional cement removal, the system can be used on demand to acquire a few calibrated X-ray images. After a semi-automatic segmentation and 3-D reconstruction of the cement with a deformable model, the system guides the surgeon through a free-hand navigated or robot-assisted cement removal. The experimental evaluation using plastic test implants cemented into anatomic specimen of human femoral bone has shown the potential of this method with a maximal error of 1.2 mm (0.5 mm RMS) for the distal cement based on just 4-5 multiplanar X-ray images. A first test of the complete system, comparing the 3-D-reconstruction with a computed tompgraphy data set, confirmed these results with a mean error about 1 mm.     

A 90-nm logic technology featuring strained-silicon

A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach.     

Discerning nonstationarity from nonlinearity in seizure-free and preseizure EEG recordings from epilepsy patients

A number of recent studies indicate that nonlinear electroencephalogram (EEG) analyses allow to define a state predictive of an impending epileptic seizure. In this paper, we combine a method for detecting nonlinear determinism with a novel test for stationarity to characterize EEG recordings from both the seizure-free interval and the preseizure phase. We discuss differences between these periods, particularly an increased occurrence of stationary, nonlinear segments prior to seizures. These differences seem most prominent for recording sites within the seizure-generating area and for EEG segments less than one minute's length.     

220GHz低噪声放大器研究

基于IHP锗硅BiCMOS工艺,研究和实现了两种220 GHz低噪声放大器电路,并将其应用于220 GHz太赫兹无线高速通信收发机电路。一种是220 GHz四级单端共基极低噪声放大电路,每级电路采用了共基极（Common Base, CB）电路结构,利用传输线和金属-绝缘体-金属(Metal-Insulator-Metal, MIM)电容等无源电路元器件构成输入、输出和级间匹配网络。该低噪放电源的电压为1.8 V,功耗为25 mW,在220 GHz频点处实现了16 dB的增益,3 dB带宽达到了27 GHz。另一种是220 GHz四级共射共基差分低噪声放大电路,每级都采用共射共基的电路结构,放大器利用微带传输线和MIM电容构成每级的负载、Marchand-Balun、输入、输出和级间匹配网络等。该低噪放电源的电压为3 V,功耗为234 mW,在224 GHz频点实现了22 dB的增益,3 dB带宽超过6 GHz。这两个低噪声放大器可应用于220 GHz太赫兹无线高速通信收发机电路。     

Time‐resolved investigation of Cu(In,Ga)Se2 growth and Ga gradient formation during fast selenisation of metallic precursors

Ga segregation at the backside of Cu(In,Ga)Se₂ solar cell absorbers is a commonly observed phenomenon for a large variety of sequential fabrication processes. Here, we investigate the correlation between Se incorporation, phase formation and Ga segregation during fast selenisation of Cu–In–Ga precursor films in elemental selenium vapour. Se incorporation and phase formation are analysed by real‐time synchrotron‐based X‐ray diffraction and fluorescence analysis. Correlations between phase formation and depth distributions are gained by interrupting the process at several points and by subsequent ex situ cross‐sectional electron microscopy and Raman spectroscopy. The presented results reveal that the main share of Se incorporation takes place within a few seconds during formation of In–Se at the top part of the film, accompanied by outdiffusion of In out of a ternary Cu–In–Ga phase. Surprisingly, CuInSe₂ starts to form at the surface on top of the In–Se layer, leading to an intermediate double graded Cu depth distribution. The remaining Ga‐rich metal phase at the back is finally selenised by indiffusion of Se. On the basis of a proposed growth model, we discuss possible strategies and limitations for the avoidance of Ga segregation during fast selenisation of metallic precursors. Solar cells made from samples selenised with a total annealing time of 6.5 min reached conversion efficiencies of up to 14.2 % (total area, without anti‐reflective coating). The evolution of the Cu(In,Ga)Se₂ diffraction signals reveals that the minimum process time for high‐quality Cu(In,Ga)Se₂ absorbers is limited by cation ordering rather than Se incorporation. Copyright © 2014 John Wiley & Sons, Ltd.