Striped‐pattern deterioration and morphological analysis of injection moldings comprising polypropylene/ethylene α‐olefin rubber blends. I. Influence of ultraviolet irradiation

Unique deterioration with a periodical striped pattern on the injection moldings of polypropylene/rubber blends is reported. After exposure to ultraviolet irradiation with a sunshine fade meter, striped patterns appeared on the injection moldings along the flow direction of the molten resin during the filling process of injection molding, even though the initial specimen showed no sign of any stripe pattern on its surface. The stripe was carefully observed with ultrasonic echo imaging, scanning electron microscopy, transmission electron microscopy, and Fourier transform infrared spectroscopy. As a result, a number of microvoids were observed inside the injected body at a depth of 50–100 μm from the surface. It became clear that the difference in the number of voids along the flow direction formed the stripe pattern. Surprisingly, these voids occurred in domains comprising a rubber phase. The distribution of voids in depth indicated the existence of a trace of a snakelike flow caused inside the injected body during the injection‐molding process. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2007     

Gate effect of vacancy-type defect of fullerene cages on metal-atom migrations in metallofullerenes

Metal-atom migration outside from a defective fullerene cage of a metallofullerene Gd@C(82) (Ca@C(82)), where the Gd(3+) (Ca(2+)) ion is incorporated inside the C(2)(v)()-C(82) cage, is discussed in detail at the B3LYP DFT level of theory. The metal-atom migrations are initiated by the formation of vacancy-type defects involving two coordinatively unsaturated C atoms. This step, which is assumed to proceed due to energy-particle irradiation, leads to the formation of antibonding orbitals between the two C atoms. Since the antibonding orbitals can interact with vacant d-orbitals of the Gd(3)(+)() ion in an in-phase fashion, the attractive interactions allow the Gd ion to insert into the two C atoms in the defect. As a result, the metal ion passes through the defect under energy-particle irradiation. In contrast, the Ca(2+) ion with the vacant s-orbitals does not have such orbital interactions, and thus, a C-C bond is reformed between the two C atoms, which prohibits the Ca ion from penetrating the defected C(82) cage. DFT calculations nicely demonstrate that the orbital interactions control metal-atom migration around the defect site using their orbital symmetries, and therefore, the vacancy-type defect acts as a "gate" that permits a specific atom to go out from a defected fullerene cage.     

Study of the differential theory of lamellar gratings made of highly conducting materials

Differential theory is said to be difficult to apply to surface-relief gratings made of metals with very high conductivity even though the formulation follows Li's Fourier factorization rules. Recently, Popov et al. [J. Opt. Soc. Am. 21, 199 (2004)] pointed out this difficulty and explained that its origin is related to the inversion of Toeplitz matrices constructed by the permittivity distribution inside the groove region. The current paper provides information about the differential theory for highly conducting gratings and considers the numerical instability problems. A stable calculation for lossless gratings is described, based on the extrapolation technique with the assumption of small losses.     

Development of a low-energy high resolution X-ray camera for high-energy gamma photon background environments

Although a high-energy gamma camera can obtain images of ¹³⁷Cs distribution by detecting the 662-keV gamma photons, its spatial resolution is reduced because high-energy gamma photons penetrate the edge of the pinhole collimator. To solve this problem, we developed a low-energy X-ray camera that detects the characteristic X-ray photons (32–37 keV) that are emitted from ¹³⁷Cs to obtain high resolution images. We used a 45 × 45 × 1-mm-thick NaI(Tl) scintillator that was encapsulated in 0.1-mm-thick aluminum and optically coupled to a 2-inch square, position sensitive photomultiplier tube (Hamamatsu Photonics, PSPMT:H12700 MOD) as an imaging detector. The imaging detector was encased in a 2-cm-thick tungsten alloy container and a pinhole collimator was attached to its camera head. The spatial resolution and sensitivity were ～5 mm full-width at half-maximum and ～0.6 cps/MBq for the 1.5-mm pinhole collimator 10 cm from the collimator surface, respectively. We administered 5 MBq of ¹³⁷Cs to a soybean seedling, imaged the distribution of radionuclides for six hours, and successfully obtained a high resolution image of it with our developed X-ray camera. We believe our camera will be a powerful tool for such ¹³⁷Cs imaging in plants.     

A series of modeling of plasma etching and damage reduction: vertically integrated computer aided design for device processing

The present stage of a series of numerical modelings of the plasma etching processes is overviewed. Physical, chemical and electrical linkage among modules describing low-temperature plasma structure/function in a reactor, the profile and local charging evolution in a hole/ trench, and electrical device damage during etching will make it possible to preparea technology computer aided design (TCAD) for the practical purpose of prediction and design of the etching process. This system will also help us to determine device arrangement and size in the system on a chip (SoC) in a closed integration system. Vertically integrated CAD for device processing (VicAddress) has been recently proposed by the authors. VicAddress will also provide a tool for discussing the etching processes between process engineers and device designers in the age of nanometer-scale device technology.     

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

The tunnel injection transit time (TUNNETT) diodes with p⁺p⁺n⁺n⁻n⁺ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p⁺n⁺) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth.     

Low temperature—long time,high temperature-short time liquefaction of coal: The Hokudai process

A Japanese cola was hydrogenated in wash oil with fine iron dust and sulphur as catalyst under a reaction pressure of 12–13 MPa at 420 °C for 2 h and then at 500 °C for 0–20 min. The liquid yield boiling up to 600 °C amounted to 55–66 wt%. Pyridine conversion was ≈ 100 wt%, benzene conversion 82–90 wt% and n-hexane conversion 53–70 wt%. Compared with direct hydrogenation at 500 °C for 10 min the low temperature-long time plus high temperature-short time liquefaction process (the Hokudai process) is a very effective method for obtaining high liquid yield under relatively low hydrogen pressure without coking, using disposable catalyst and non-donor solvent.     

Superconducting magnet system containing Bi-2212/Ag Coil Generates 21.8 T at 1.8K

We fabricated a Bi-2212/Ag double stacked pancake coil of 13 mmØ) in inner bore and of 46.5 mmØ in outer diameter, by using Bi-2212/Ag tapes prepared by the combination of continuous dip-coating process and melt-solidification technique. This small superconducting magnet was used as an insert magnet of a conventional superconducting magnet system and tested at saturated superfluid helium temperature (～ 1.8K) in various bias fields. The generated field of Bi2212/Ag coil was 0.9 T, with I_c of 310 A(criterion 10^-13Ω·m), in the bias field of 20.9 T. Thus, this superconducting magnet system achieved generation of magnetic field of 21.8 T in the full superconducting state.     

Coking reaction in hydrogenation

Asphaltene prepared from a Japanese coal (Akabira, 81.2 wt% C) and coal tar pitch were heat treated under nitrogen or hydrogen. Under nitrogen the initial thermal decomposition produced radicals which abstracted hydrogen from other molecules to stabilize and to produce smaller molecules and gas. The molecules from which hydrogen was abstracted as well as other radicals polycondensed to produce heavier solvent-insoluble fractions. Under hydrogen the radicals were stabilized by hydrogen gas to produce smaller molecules avoiding the production of a heavier fraction. The higher the hydrogen pressure, the smaller was the yield of heavier fraction and the larger the yield of lighter fraction. Higher temperature accelerated the production of the heavier fraction. Donor solvents could reduce the production of the heavier fraction.