Valve controlled fluorescence detection system for remote sensing applications

We demonstrate a microfluidics-based fluorescence detection device where the filters, source, detector, and electronically controlled valves are embedded into a Polydimethylsiloxane (PDMS)-based microfluidic chip. The device reported here has been specifically designed for chlorophyll a fluorescence sensing in autonomous systems, such as oceanic applications. In contrast to a monolithic approach, the modular approach made the fabrication of this device simpler and cheaper. For fluorescence detection, an InGaN/GaN LED is used as the excitation source to specifically excite chlorophyll a; a metal-dielectric Fabry?CPerot filter was used to extinguish out-of-band excitation. A simple Si photodiode is used as detector and provided with a thermally evaporated CdS emission filter to block the excitation source. This filter combination provides an excellent solution to the difficult problem of combining high-rejection excitation and emission filters in an integrated thin-film format. Furthermore, the metal-dielectric filter provides a much broader angular response than a comparable multilayer Bragg mirror, which is a key advantage in the integrated format. We use a novel paraffin wax-based valve design affords low power single-use actuation, between 0.5 and 1 J per actuation and withstands 0.6 bar differential pressure, which provides better performance than its previously reported counterparts. The remote valve-controlled operation of the fluorescence detection system is demonstrated, illustrating the measurement of a chlorophyll a solution, with a detection limit of 340 ??M and subsequent valve-controlled flushing of the measurement reservoir.     

Sex-related differences in foot shape of adult Caucasians--a follow-up study focusing on long and short feet

The study's purpose was to substantiate findings on sex-related differences in foot morphology focusing on fringe sizes. Altogether, 287 Caucasian adults with long or short feet were scanned. Data were analysed together with data from 847 subjects from a previous study with comparable inclusion criteria and anthropometric data by: (1)comparing absolute measures within 237-277 mm foot length (FL); (2) comparing averaged measures across sizes in % of foot length for 203-323 mm FL; (3) reclassifying the additional subjects into a previously defined foot type classification. Male feet were wider and higher for the same FL. Averaged across sizes, no relevant differences between sexes were found for widths and heights. Slender or flat-pointed foot types were more common in longer feet, shorter feet tended to be bigger. Definitions for 'long' and 'short' are sex-related with an offset of three shoe sizes (EU). Results of this follow-up study on long and short feet can substantiate previous findings mainly described for the most common sizes. STATEMENT OF RELEVANCE: Improper footwear can cause pain and injury and proper fit is a major criterion for shoe buyers. Knowledge about sex-related differences in foot shape is important for shoe design. This study supplements the field of knowledge for very small and large feet.     

Reduced surface sidewall recombination and diffusion in quantum-dot lasers

We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 /spl mu/m) and, for the first time, provide a value for surface recombination velocity (5/spl times/10/sup 4/ cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5/spl times/10/sup 5/ cm/s and 5 /spl mu/m, respectively) allowing the creation of narrow (2-3 /spl mu/m wide) lasers with comparable threshold currents to those of broad area devices.     

Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs

In this paper we report on a newly developed multi-gate nanowire-field-effect device (NWFET) in which the transistor type (i.e. PMOS and NMOS) is freely selectable by the application of a control-voltage. This significantly adds to flexibility in design of integrated circuits and their fabrication, respectively. We will show, that the use of midgap Schottky-barrier source and drain contacts are the key enabler for this device concept to be functional. A fully functional freely configurable CMOS-NWFET inverter circuit is presented, demonstrating the capability of this SOI technology platform. All this makes the presented NWFET-technology suitable for the fabrication multi-purpose devices for many applications.     

Repair materials and techniques for concrete structures in nuclear power plants

The paper summaries portions of work of the Structural Aging Program, sponsored by the Nuclear Regulatory Commission (NRC). The paper addresses the assessment and repair of concrete structures in nuclear power plants. It presents the results of a survey of the the nuclear power plants in the United States to identify susceptible concrete components, rates of occurrence of deterioration, and to determine the durability of repairs. The paper describes deterioration mechanisms and discusses their effect. Repair techniques are described. Evaluation techniques and nondestructive test techniques are also discussed.     

Recrystallization in oxide-dispersion strengthened mechanically alloyed sheet steel

Systematic annealing at temperatures between 1300 °C and 1380 °C was applied to sheets of INCOLOY MA-956, an oxide-dispersion strengthened (ODS), mechanically alloyed, iron-base steel containing (in mass percent) 20.8Cr, 5.0A1, 0.5Y₂O₃, and 0.5Ti. The billets, comprised of hot isostatically pressed (“hipped”), mechanically alloyed powder, were hot- and cold-rolled to produce a 0.5-mm-thick sheet with a strong (100)«110» deformation texture. Light and transmission electron microscopy established that recrystallization initiated by nucleation at the sheet centerline. Initial rapid growth of the centerline-nucleated grains, designated stage I, resulted in plate-shaped grains oriented parallel to the rolling plane at the sheet centerline. Subsequent growth, designated stage II, was developed by planar growth fronts through the sheet thickness at a slower rate. The final product was a very coarse grain structure, sometimes with only a single grain through the sheet thickness. The recrystallization kinetics were typified by an incubation time, a temperature dependance characterized by an activation energy of 506 kJ/mole, and a decreasing rate of boundary migration with increasing time at temperature. The microstructural evolution is discussed in terms of the influences of deformation texture, residual stress, dislocation substructure, and oxide dispersion on the recrystallization process.