Colloidal processing of polymer ceramic nanocomposite integral capacitors

Polymer ceramic composites form a suitable material system for low temperature fabrication of embedded capacitors appropriate for the MCM-L technology. Improved electrical properties such as permittivity can be achieved by efficient filling of polymers with high dielectric constant ceramic powders such as lead magnesium niobate-lead titanate (PMN-PT) and barium titanate (BT). Photodefinable epoxies as the matrix polymer allow fine feature definition of the capacitor elements by conventional lithography techniques. The optimum weight percent of dispersant is tuned by monitoring the viscosity of the suspension. The dispersion mechanism (steric and electrostatic contribution) in a slightly polar solvent such as propylene glycol methyl ether acetate (PGMEA) is investigated from electrophoretic measurements. A high positive zeta potential is observed in the suspension, which suggests a strong contribution of electrostatic stabilization. By optimizing the particle packing using a bimodal distribution and modified processing methodology, a dielectric constant greater than 135 was achieved in PMN-PT/epoxy system. Suspensions are made with the lowest PGMEA content to ensure the efficiency of the dispersion and efficient particle packing in the dried film. Improved colloidal processing of nanoparticle-filled epoxy is a promising method to obtain ultra-thin capacitor films (<2/spl mu/m) with high capacitance density and improved yield. Capacitance of 35 nF/cm/sup 2/ was achieved with the thinnest films (2.5-3.0 /spl mu/m).     

Enhanced Photoelectrochemistry in CdS/Au Nanoparticle Bilayers

Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation.     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.     

Panchromatic Chromophore Mixtures in an AlPO4‐5 Molecular Sieve: Spatial Separation Effects and Energy Transfer Cascades

Dye‐loaded AlPO₄‐5 single crystals were prepared by microwave‐assisted hydrothermal synthesis from a batch, containing a mixture of three chromophores (Coumarin 40, Rhodamine BE50, and Oxazine 1) differing in their absorption range, molecular dimensions, and solubilities. Confocal fluorescence images reveal a spatial separation effect of the dye molecules, where the slimmer, more‐soluble dye molecule (Coumarin 40) is uniformly distributed in the body of the single crystal, and the bulky and/or less‐soluble ones (Rhodamine BE50, Oxazine 1) are situated in distinct domains. Visible spectra show good panchromatic absorption of visible light. Fluorescence lifetime measurements indicate the presence of an energy transfer cascade of the entirely fixed dye molecules from Coumarin 40 to Oxazine 1. The transfer mechanism is predominantly radiative.     

Context-Processing Deficits in Schizotypal Personality Disorder.

Research suggests that schizotypal personality disorder (SPD) is a part of the spectrum of schizophrenia-related illnesses. This article hypothesizes that a deficit in the representation and maintenance of context is a core cognitive disturbance in schizophrenia and that SPD individuals should demonstrate context-processing deficits. To test this hypothesis, the authors administered 3 versions of their AX-CPT task, designed to assess context processing, to 35 healthy controls and 26 individuals with DSM-IV SPD. They also administered working memory and selective attention tasks. SPD individuals displayed context representation deficits similar to those found in schizophrenia but did not show the same additional deficits in context maintenance. Context processing was strongly associated with working memory and selective attention performance in the SPD individuals. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Stability of the FDTD scheme containing macromodels

Stability analysis of the finite difference time domain scheme containing macromodels is presented. It is shown that for a stable macromodel, the stability of the combined scheme depends on the field interpolation at the macromodel boundary. The maximal allowable time step is shown to be much larger than for subgridding.     

Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

The coefficients of thermopower and electrical and thermal conductivity in the PbTe_0.8Se_0.1 S _0.1 solid solution with electron concentration (4.6–54) × 10¹⁸ cm^?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb_1?x Sn_xTe_1?x Se_x alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L₀ numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L₀ = 0.75 is obtained for a lightly doped sample at ～130 K.