无油分子泵机组的组装

介绍了将ALCATEL公司生产的一台ATPl00涡轮分子泵、一台MDP50ll牵引分子泵及一台VRC公司生产的lBy6型干泵组装成无油分子泵机组的过程。文中给出了泵间配合的计算、机组方案的设计、连接管路、仪器支架的设计及选择。本机组所采取的设计方案使三个泵都最大限度地发挥了优点避免了缺陷，较好地满足了使用要求，为今后选购单泵和组装无油分子泵机组提供了可靠的理论和实验依据。     

在基于MPLS的层次化移动IP网络中支持DiffServ的研究

MPLS支持DiffServ、流量工程,能为网络提供较好的QoS保证,而移动IP(MIP)能为移动设备提供较好的移动性支持。文章探讨了在无线接入网中MPLS和MIP结合实现DiffServ的方案,并给出了一种在基于MPLS的层次化MIP网络结构中支持DiffServ的体系结构,设计了其节点功能模型和关键协议。方案中利用了层次化结构的区域注册和重路由机制,减少了切换时延和网络的信令负荷。     

DSR的一种自适应路由自动缩短机制

动态源路由协议是无线自组织网络众多路由协议中被广泛关注的一种按需路由协议，目前，关于该协议的优化措施有很多。本文先分析了动态源路由协议的一种优化机制——路由自动缩短，该机制能动态缩短处于工作状态路由的跳数，但不保证缩短路由的质量，在此基础上，提出一种自适应路由自动缩短机制，新机制既可缩短路由．又能保证缩短路由质量．理论分析及仿真结果表明，自适应路由缩短机制的各项性能优于原路由缩短机制。     

小井距开发现河油田低渗油藏可行性研究

认为注采井网井距大,水驱控制程度差,采收率偏低是影响胜利油田现河低渗透油藏开发的关键,通过井间密度与水驱控制程度和采收率的关系等分析,提出了现河低渗透油藏开发的合理的井网密度。     

Low-temperature poly-SiGe alloy growth of high gain/speed pin infrared photosensor with gold-induced lateral crystallization (Au-ILC)

The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications.     

化学复合镀层激光处理研究

研究了激光处理对Ni-P -SiC化学复合镀层的影响。借助于扫描电镜、能谱仪、X射线衍射、显微硬度计等设备对激光处理后复合镀层的表面形貌、组织结构及性能进行了综合分析。结果表明 ,对复合镀层进行激光处理可以获得与炉内加热同样的镀层硬度 ,且当激光功率 4 0 0W ,扫描速度 1.5m /min时 ,镀层硬度高于炉内加热的硬度     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.     

利用补充分组编码降低MIMO-OFDM系统峰均比

多输入多输出正交频分复用（MIMO—OH）M）系统已成为第四代移动通信系统研究中的热点，而OFDM系统产生的高峰均功率比（PAPR）是限制MIMO—OFDM技术实用化的主要障碍之一。详细介绍了补充分组编码技术的基本原理，并通过仿真与测试的结论与其他编码技术进行了比较，验证了此编码技术对降低峰均功率比确实具有很好的效果。     

单元串联式多电平高压变频器的起源、现状和展望

本文对单元串联式多电平高压变频器的起源和现状进行了总结,同时从无速度传感器矢量控制、大容量化、冗余设计等方面对该技术未来的发展趋势进行了展望。     

我国IC产业发展状况分析

本文分析了集成电路及其相关技术的现状和发展趋势。分析了国内集成电路产业状况和面临的课题。