Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

The effects of growth factors on Tenon''s capsule fibroblasts in serum-free culture

Recent studies from our laboratory have shown that in the mouse and rat nephron Ca2+ and Mg2+ are not reabsorbed in the medullary part of the thick ascending limb (mTAL) of Henle's loop. The aim of the present study was to investigate whether the absence of transepithelial Ca2+ and Mg2+ transport in the mouse mTAL is due to its relative low permeability to divalent cations. For this purpose, transepithelial ion net fluxes were measured by electron probe analysis in isolated perfused mouse mTAL segments, when the transepithelial potential difference (PDte.) was varied by chemical voltage clamp, during active NaCl transport inhibition by luminal furosemide. The results show that transepithelial Ca2+ and Mg2+ net fluxes in the mTAL are not driven by the transepithelial PDte. At zero voltage, a small but significant net secretion of Ca2+ into the tubular lumen was observed. With a high lumen-positive PDte generated by creating a transepithelial bath-to-lumen NaCl concentration gradient, no Ca2+ and Mg2+ reabsorption was noted; instead significant and sustained Ca2+ and Mg2+ net secretion occurred. When a lumen-positive PDte was generated in the absence of apical furosemide, but in the presence of a transepithelial bath-to-lumen NaCl concentration gradient, a huge Ca2+ net secretion and a lesser Mg2+ net secretion, not modified by ADH, were observed. Replacement of Na+ by K+ in the lumen perfusate induced, in the absence of PDte changes, important but reversible net secretions of Ca2+ and Mg2+. In conclusion, our results indicate that the passive permeability of the mouse mTAL to divalent cations is very low and not influenced by ADH. This nephron segment can secrete Ca2+ and Mg2+ into the luminal fluid under conditions which elicit large lumen-positive transepithelial potential differences. Given the impermeability of this epithelium to Ca2+ and Mg2+, the secretory processes would appear to be of cellular origin.     

Perfection of methodical approaches to designing vaccines against tick-borne encephalitis

Nine female patients with a urethral diverticulum were admitted to our center over a six period: The clinical symptomatology was not specific. The diagnosis has been performed by voiding and retrograde cysto-uretrogram. The surgical treatment consisted in the excision of the diverticula, with the patient in the supine position. No perioperative morbidity was observed.     

Fuzzy consecutive-k-out-of-n:F system reliability

In this paper, we propose a new method to analyze fuzzy consecutive-k-out-of-n:F system reliability using fuzzy GERT. The triangular fuzzy numbers are used to fuzzify probabilities of the consecutive-k-out-of-n:F system and the interval arithmetic, α-cuts and an index of optimism λ are applied to compute fuzzy consecutive-k-out-of-n:F system reliability on fuzzy the GERT network. Futhermore, we can obtain all computation results by “MATHEMATICA” package.     

内嵌闪存MCU的高性能多通道24位采集系统ADuC845

ADuC845是ADI公司新推出的嵌有单指令周期8052闪存MCU、带两路24位∑ -△A/D、双12位D/A以及两个灵活脉宽调制输出的高性能24位数据采集与处理系统芯片。该芯片的数据处理速度达12MIPS,且设计简单 ,噪声低 ,非常适用于精密仪器仪表。文中详细介绍了该芯片的功能特点和工作原理 ,给出了该芯片的应用方法。     

SKYPE在远程英语教学方面的实时应用

SKYPE系统是目前世界上最流行的互联网远程视频、音频、文字实时交互平台，其音频、视频传播实时非常清晰，这对将远程教育拓展到家庭，特别是对推动远程英语教育的广泛性和普遍性能够起到很大的作用，本文就该平台的基本功能和性能做了介绍，并在远程英语教育方面的应用提出了实践的方法。     

发掘传统职业道德教育资源加强高职院校职业道德教育

简述了中国传统职业道德教育思想;并就高职院校如何借鉴和发掘优秀传统职业道德教育资源,科学、合理、有效地运用优秀传统职业道德资源塑造当代新人进行了探讨。