Wavelet-based sequential Monte Carlo blind receivers in fading channels with unknown channel statistics

Recently, an adaptive Bayesian receiver for blind detection in flat-fading channels was developed by the present authors, based on the sequential Monte Carlo methodology. That work is built on a parametric modeling of the fading process in the form of a state-space model and assumes the knowledge of the second-order statistics of the fading channel. In this paper, we develop a nonparametric approach to the problem of blind detection in fading channels, without assuming any knowledge of the channel statistics. The basic idea is to decompose the fading process using a wavelet basis and to use the sequential Monte Carlo technique to track both the wavelet coefficients and the transmitted symbols. A novel resampling-based wavelet shrinkage technique is proposed to dynamically choose the number of wavelet coefficients to best fit the fading process. Under such a framework, blind detectors for both flat-fading channels and frequency-selective fading channels are developed. Simulation results are provided to demonstrate the excellent performance of the proposed blind adaptive receivers.     

一种新型数字SDTV信源解码器的实现

本文实现了以专用芯片STi5518为核心器件的SDTV信源解码器.该解码器可配接不同制式的前端,组成完整的机顶盒方案;可对符合MPEG-2的视频流进行解码;可对AC-3或MPEG两种音频解码;另外,本系统还实现了硬盘录像和条件接收两个有特色的功能.本文重点叙述该信源解码器的硬件设计和实现原理.     

光子网格技术及应用

光子网格是近年来出现的一个全新的、跨学科的研究领域,它具有广阔的应用领域及市场前景.本文首先介绍了光子网格产生的背景,然后分析了光子网格研究的关键问题及进展情况,最后给出了一些应用实例.     

垂直结构GaN基LEDs热压键合应力损伤分析

热压键合是垂直结构LED制备的关键工艺步骤,通过TEM,PL,Raman等测试手段,探讨热压键合造成的应力损伤、GaN材料缺陷、LED内量子效率以及反向漏电间的内在联系,研究以键合引起的应力诱导垂直结构GaN基LED光电特性的退化机制,探讨应力损伤对垂直结构GaN基LED光电特性的影响.实验结果表明,热压键合过程会在GaN材料内产生GPa量级的残余应力,在量子限制strark效应作用下,GaN材料辐射复合效率发生明显退化;同时热压键合应力还会诱发GaN材料位错密度的增加,最终导致LED反向漏电增大.     

功率密度对VHF-PECVD制备μc-Si:H的影响

在不同功率密度下用甚高频化学气相沉积(VHF-PECVD)法制备了一系列微晶硅(μc-Si:H)薄膜,并对薄膜的微观结构进行了研究.重点研究了在较低的功率密度下,功率密度的改变对薄膜沉积速率和结晶状况的影响.结果表明,随着功率密度的提高,沉积速率逐渐加大,进一步提高功率密度时,沉积速率趋于饱和;与此同时,薄膜的孵化层厚度和形核密度随功率密度而变化.     

Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis

In this work, a detailed TEM sample preparation recipe based on a wedge polishing technique for GaN-based materials is presented. The obtained samples have atomically flat surfaces without any obvious surface damages such as the formation of amorphous layers. A composition estimation of Al(x)Ga(1-x)N from Z-contrast STEM imaging is carried out using these samples. The results are in good accord with the nominal composition.     

离子注入中的沟道效应控制

离子注入中的沟道效应使注入离子在深度上的控制变得很困难，并使SHEET值的均一性恶化，本文借助计算机模型。对注入剂量，注入能量，硅片基板方位，硅片表面薄膜氧化层厚度变化时，研究分析了注入沟道效应的相应变化。     

统计学在评估镭射能力验证中的应用

统计方法在工业生产领域中已广泛应用,通过统计学的应用可以对设备的制程能力进行准确评估,并能够进行生产的质量控制等。本课题在TFT-LCD镭射切割生产领域中,首创使用统计学相关工具,设计出一套科学的评估方法进行设备精度能力的评估验证。目的在于通过对新型设计的镭射切割机构能力验证,找出成本更低廉的设备构架。在设备性能验证过程中,验证方法与数据分析手段尤为重要,其结果会影响实验验证的有效性。本课题主要针对镭射切割设备的几项关键特性指标,以及利用基本的统计工具对镭射系统的能力做出分析,验证结论为新型的镭射构架仅在工作中心区域能力符合要求,整体工作区域无法全部满足使用能力要求,需要对硬件稳定性再进行进一步的调试。     

Effects of carrier mobility, energy gap, and excitation size on the performance of single layer organic solar cells

A model of universal single layer organic solar cells in metal-insulator-metal （MIM） representation involving field-depen- dent carrier mobility is set up. The current-voltage characteristics as well as the distribution of electron density, hole density and recombination rate on a set of parameters are simulated. Subsequently, the dependences of the short-circuit current density （Jsc） and open-circuit voltage （Voc） on the electron and hole zero-field mobility, excitation generation rate, energy gap, as well as electron-hole pair distance in an excitation are investigated. It is demonstrated that the enhancement of either the electron mobility or the hole mobility can contribute to the increase of Jsc in the devices. The increase of the hole mobility can lead to the improvement of both Jsc and Voc, and the simultaneous increase of the electron mobility and hole mobility will greatly elevate Jsc but maintain a steady Voc. Additionally, all the increases of the excitation generation rate, energy gap and electron-hole pair distance are beneficial to both the remarkable increases of Jsc and Voc of the devices.     

某PD雷达信号处理机的设计

简要回顾PD雷达信号处理方法,结合某PD雷达信号处理机研制,阐述该信号处理机的软硬件实现方法.其硬件平台以8片TS201芯片为核心,通过链路口实现相互间点对点的通信.实现了PD雷达距离门选通工作模式下各距离门的多普勒滤波以及恒虚警处理等.