Impact of cobalt silicidation on the low-frequency noise behaviorof shallow p-n junctions

This work describes the low-frequency noise of forward biased shallow p-n junctions fabricated in epitaxial silicon substrates. Particular emphasis is on the effect of silicidation on the low-frequency noise spectral density S_I. It is demonstrated that the observed 1/f noise is significantly larger in Co-silicided junctions compared with the nonsilicided ones. A detailed analysis of the current and geometry dependence of S_I leads to the conclusion that the 1/f noise is of the generation-recombination (GR) type, with the responsible GR centres homogeneously distributed over the device area. From the correlation with the forward current-voltage (I-V) characteristics, it is derived that GR fluctuations in the hole current through the n⁺ region cause the increased 1/f noise in the silicided devices     

Trends in Microelectronics,Optical Detectors,and Biosensors

The ultimate downsizing of the minimum feature size is hampered by physical, technological, and economical limitations. To ensure Moore’s law below 100 nm technology nodes both front‐ and back‐end processing have to face technological challenges as clearly stipulated by the International Technology Roadmap for Semiconductors (ITRS). Lithography, gate stack, shallow junctions, high‐ and low‐k dielectrics, and interconnect schemes are nowadays amongst the hot research issues leading to a global collaboration. This paper reviews some of the on‐going research efforts to come to cost‐effective solutions forming the backbone for future technology generations. Moreover the status and evolution of complementary metal oxide semiconductor (CMOS) compatible image sensors, infrared (IR) detectors, and of biosensors is treated.     

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation

Degradation of the electrical performance in partially depleted SOI MOSFETs by 2-MeV electrons is presented. The degradation behavior of the 2^nd transconductance (g_mf) peak and its dependence on the back gate voltage is discussed taking into account the degradation of the back gate. The drain current in the subthreshold region is increased by irradiation. This is caused by the turn-on of the parasitic edge transistor. The 2^nd peak in the transconductance (g_mf) tends to decrease after irradiation, while less degradation is observed in the 1^st g_mf peak. The decrease of the 2^nd g_mf peak enhances by the application of a negative V_BG and the result can be explained by the degradation of the Si/buried oxide interface and the increase of the sidewall leakage, which gives rise to a lowering of the body potential.     

Keeping Control: The Importance of Nonverbal Expressions of Power by Organizational Spokespersons in Times of Crisis

This paper examines the impact of nonverbal expressions of power by organizational spokespersons during different crisis stages. Study 1 investigates how vocal nonverbal cues express power during crises and how this affects perceptions of spokespersons. The results illustrate that a spokesperson who speaks with a lowered voice pitch, which expresses power, appears more competent than one with a raised voice pitch. Study 2 examines the moderating influence of crisis stage on the impact of visual nonverbal cues. During a crisis, powerful nonverbal behaviors minimize reputational damage through an increase in perceived competence of the spokesperson. In the aftermath of a crisis, powerless nonverbal behaviors positively affect the organizational reputation through an intermediate effect on perceived sincerity of the spokesperson.     

Fault localisation in ICs by goniometric laser probing of thermal induced surface waves

New methods for fault detection in ICs are needed due to new technological trends. The detection of heat generated by faults offers interesting perspectives in this respect. Periodic heat released at the surface or inside ICs generates a surface thermal wave that can be detected by appropriate laser probing at distances up to 500 μm from the source. We propose in this paper a goniometric laser probing method allowing the determination of the direction and distance of a fault with respect to the probing point.     

Identifying Genetic Biomarkers Predicting Response to Anti-Vascular Endothelial Growth Factor Injections in Diabetic Macular Edema

Intraocular anti-vascular endothelial growth factor (VEGF) therapies are the front-line treatment for diabetic macular edema (DME); however, treatment response varies widely. This study aimed to identify genetic determinants associated with anti-VEGF treatment response in DME. We performed a genome-wide association study on 220 Australian patients with DME treated with anti-VEGF therapy, genotyped on the Illumina Global Screening Array, and imputed to the Haplotype Reference Consortium panel. The primary outcome measures were changes in central macular thickness (CMT in microns) and best-corrected visual acuity (BCVA in ETDRS letters) after 12 months. Association between single nucleotide polymorphism (SNP) genotypes and DME outcomes were evaluated by linear regression, adjusting for the first three principal components, age, baseline CMT/BCVA, duration of diabetic retinopathy, and HbA1c. Two loci reached genome-wide significance (p < 5 × 10⁻⁸) for association with increased CMT: a single SNP on chromosome 6 near CASC15 (rs78466540, p = 1.16 × 10⁻⁹) and a locus on chromosome 12 near RP11-116D17.1 (top SNP rs11614480, p = 2.69 × 10⁻⁸). Four loci were significantly associated with reduction in BCVA: two loci on chromosome 11, downstream of NTM (top SNP rs148980760, p = 5.30 × 10⁻⁹) and intronic in RP11-744N12.3 (top SNP rs57801753, p = 1.71 × 10⁻⁸); one near PGAM1P1 on chromosome 5 (rs187876551, p = 1.52 × 10⁻⁸); and one near TBC1D32 on chromosome 6 (rs118074968, p = 4.94 × 10⁻⁸). In silico investigations of each locus identified multiple expression quantitative trait loci and potentially relevant candidate genes warranting further analysis. Thus, we identified multiple genetic loci predicting treatment outcomes for anti-VEGF therapies in DME. This work may potentially lead to managing DME using personalized treatment approaches.     

A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors

The influence of the fin width on substrate-to-gate coupling in long-channel silicon-on-insulator triple-gate transistors is investigated. A complementary analysis, taking into account both the "front coupling" (variation of the front-channel threshold voltage V_T1, as a function of the substrate bias V_G2) and "back coupling" (variation of the back-channel threshold voltage V_T2) as a function of the front-gate bias V_G1) characteristics has been carried out. It is shown that the back coupling, as opposed to the front coupling, is highly sensitive to the fin width in narrow-channel devices and can even be used in fin width extraction. Simple analytical 2-D models for the body potential, V_T1, and V_T2 have been developed to clarify the experimental data, showing in particular the gradual control of the back interface potential by the lateral gates in narrow fins. The model stands as a 2-D generalization of the Lim and Fossum's well-known 1-D interface coupling model     

Radiation damage of Ge-on-Si devices

The radiation damage induced by 2-MeV electrons and 70-MeV protons in p⁺n diodes and p-channel MOS transistors, fabricated in epitaxial Ge-on-Si substrates is reported for the first time. For irradiation above 5×10¹⁵ e/cm², it is noted that both the reverse and forward current increase, and that the forward current is lower after irradiation for a forward voltage larger than about 0.5 V. The reason for this might be an increased resistivity of the Ge-on-Si substrate. For p-MOSFETs, for a 1×10¹⁶ e/cm² dose, a slight negative shift of the threshold voltage and a decrease of the drain current for input and output characteristics have been observed. In addition, g_m decreases after irradiation. The degradation of the transistor performance is thought to be due to irradiation-induced positive charges in the high-κ gate dielectric. The induced lattice defects are also mainly responsible for the leakage current increase of the irradiated diodes.     

Physiological and cognitive discontinuities: From mythical mediation to implicit discretization of architectural design tools

In architectural design, representation tools are often compared according to their alleged effects on the creativity of designers. Moreover, their mediating capacities are often mythicized, to such an extent that one might surmise the direct transmission of the mental images from the designer's consciousness to an external representation. In this speculative essay, we demonstrate that the process of representation at work in architectural design originates from the designer's consciousness natural cognitive ability, rather than from the use of a specific mediation tool between the designer and his environment, between the mentally constructed architectural project and its representation. The effects of any tool of representation—analog or digital—on our perceptual apparatus depend primarily on the cognitive mechanisms affecting the discontinuous flow of internal representations formed by our consciousness. In other words, we propose to shed a new light on these limitations through the heuristic modeling of an architectural project designer confronted with his own cognitive biases, and the limits of the representation processes. In the present essay, the discontinuities and uncertainties inherent to the processes of representation are reintegrate in the models.