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31.
Data mining extracts implicit, previously unknown, and potentially useful information from databases. Many approaches have been proposed to extract information, and one of the most important ones is finding association rules. Although a large amount of research has been devoted to this subject, none of it finds association rules from directed acyclic graph (DAG) data. Without such a mining method, the hidden knowledge, if any, cannot be discovered from the databases storing DAG data such as family genealogy profiles, product structures, XML documents, task precedence relations, and course structures. In this article, we define a new kind of association rule in DAG databases called the predecessor–successor rule, where a node x is a predecessor of another node y if we can find a path in DAG where x appears before y. The predecessor–successor rules enable us to observe how the characteristics of the predecessors influence the successors. An approach containing four stages is proposed to discover the predecessor–successor rules. © 2006 Wiley Periodicals, Inc. Int J Int Syst 21: 621–637, 2006. 相似文献
32.
Qunsheng Cao Yinchao Chen 《Antennas and Propagation, IEEE Transactions on》2003,51(2):350-357
We apply an anisotropic perfectly matched layer (APML) absorber for open boundary truncation in implementation of the multiresolution time domain (MRTD) scheme. We develop an APML update algorithm to handle a general APML region in the MRTD formulations with the content of the leapfrog algorithm applied in the conventional finite-difference time-domain method. We also discuss the boundary truncations for both perfectly electric conductor (PEC) and perfectly magnetic conductor (PMC) walls using the image techniques. We validate the algorithm by analyzing various guided wave and antenna structures. It is found that the APML performs well for absorbing electromagnetic waves in the MRTD algorithm. 相似文献
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为确保特殊时期党政军指挥通信畅通,充分利用中国移动现网资源,将卫星通信与地面光缆、微波传榆。以及移动网络无缝衔接,共同构建中国移动天地一体应急通信平台。 相似文献
35.
TD-SCDMA直放站对网络性能的影响 总被引:1,自引:0,他引:1
TD-SCDMA直放站是用于TD-SCDMA移动通信网的全双工、线性射频放大设备.介绍了TD直放站不同于其它系统的同步的时分双工模式特点,并讨论了TD-SCDMA直放站的引入可能对网络性能造成的影响及其解决方法。 相似文献
36.
论文将Fermat素性检验的思想运用于不可约多项式的判断,给出了一个对于不可约判断问题的Monte Carlo 算法,分析了该算法的计算复杂度问题,并且给出了次数在200以内的检验结果。 相似文献
37.
Yen-Shin Lai Juo-Chiun Lin 《Power Electronics, IEEE Transactions on》2003,18(5):1211-1219
A new hybrid fuzzy controller for direct torque control (DTC) induction motor drives is presented in this paper. The newly developed hybrid fuzzy control law consists of proportional-integral (PI) control at steady state, PI-type fuzzy logic control at transient state, and a simple switching mechanism between steady and transient states, to achieve satisfied performance under steady and transient conditions. The features of the presented new hybrid fuzzy controller are highlighted by comparing the performance of various control approaches, including PI control, PI-type fuzzy logic control (FLC), proportional-derivative (PD) type FLC, and combination of PD-type FLC and I control, for DTC-based induction motor drives. The pros and cons of these controllers are demonstrated by intensive experimental results. It is shown that the presented induction motor drive is with fast tracking capability, less steady state error, and robust to load disturbance while not resorting to complicated control method or adaptive tuning mechanism. Experimental results derived from a test system are presented confirming the above-mentioned claims. 相似文献
38.
Chun-Tsen Lu Kun-Wei Lin Huey-Ing Chen Hung-Ming Chuang Chun-Yuan Chen Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(6):390-392
A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated. 相似文献
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40.
The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications. 相似文献