Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs

For a further improvement of the noise performance in AlGaN/GaN HEMTs, reducing the relatively high gate leakage current is a key issue. In this paper, an experiment was carried out to demonstrate that one method during the device fabrication process can lower the noise. Two samples were treated differently after gate recess etching: one sample was annealed before metal deposition and the other sample was left as it is. From a comparison of their Ig-Vg characteristics, a conclusion could be drawn that the annealing can effectively reduce the gate leakage current. The etching plasma-induced damage removal or reduction after annealing is considered to be the main factor responsible for it. Evidence is given to prove that annealing can increase the Schottky barrier height. A noise model was used to verify that the annealing of the gate recess before the metal deposition is really effective to improve the noise performance of AlGaN/GaN HEMTs.     

Electrically injected single-defect photonic bandgapsurface-emitting laser at room temperature

An electrically injected defect-mode photonic bandgap microcavity surface-emitting laser at room temperature is demonstrated for the first time. 931 nm lasing is observed under pulsed excitation conditions. With a threshold current of 300 μA. Near- and far-field modal characteristics of the emission confirm lasing from the defect-related microcavity in the photonic bandgap crystal     

高机动目标对雷达检测的影响分析

针对无人飞机、导弹、卫星等高速目标机动飞行的特点,分析了目标飞行过程中相对雷达径向速度、径向加速度以及加加速度随时间的变换关系,并利用高次幂相位回波信号建立了信号模型,研究了高次相位对常规方法进行目标检测的影响,获得了最佳积累脉冲数与信噪比、加加速度的关系;最后,提出一种利用短时分数阶傅里叶变换(STFRFT)对三次相位信号进行分析和参数估计的方法,仿真表明该算法处理性能高于傅里叶变换,可为实际雷达检测高机动目标提供理论参考。     

Key-dependent side-channel cube attack on CRAFT

CRAFT is a tweakable block cipher introduced in 2019 that aims to provide strong protection against differential fault analysis. In this paper, we show that CRAFT is vulnerable to side-channel cube attacks. We apply side-channel cube attacks to CRAFT with the Hamming weight leakage assumption. We found that the first half of the secret key can be recovered from the Hamming weight leakage after the first round. Next, using the recovered key bits, we continue our attack to recover the second half of the secret key. We show that the set of equations that are solvable varies depending on the value of the key bits. Our result shows that 99.90% of the key space can be fully recovered within a practical time.     

一种用于采保电路的宽带高增益放大器的设计

分析了跨导运算放大器的电路结构,采用两级放大电路,考虑到全差分结构中要使用共模反馈,用共源共基和共源共栅电路来实现电路的设计.同时对部分性能指标进行了优化,其中包括增益非线性引入的误差和不完全建立误差.设计了一种宽带高增益跨导放大器,利用0.35 μm Bi CMOS工艺条件下,Spectre仿真得到运算放大器的开环增益大于60 dB,单位增益带宽可达2.1 GHz,输出摆幅能达到1.5 V.     

利用改进的电荷泵法研究SONOS存储器陷阱电荷的分布特性

在silicon-oxide-nitride-oxide-silicon(SONOS)等电荷俘获型不挥发存储器中,编程操作后注入电荷的分布会对器件的读取、擦写以及可靠性带来影响.利用电荷泵方法可以有效而准确地测量出注入电荷沿沟道方向的分布.为了提高测试精度,在进行电荷泵测试时,采用固定低电平与固定高电平相结合的方法,分别对SONOS器件源端和漏端进行注入电荷分布的测试.通过测试,最终获得SONOS存储器在沟道热电子注入编程后的电子分布.电子分布的峰值区域在漏端附近,分布宽度在50nm左右.     

Ni元素对激光诱导自蔓延反应合成Ti-Fe共晶合金组织性能的影响

采用激光诱导自蔓延反应合成制备了Ti-Fe-Ni三元合金。实验结果表明,当第三组元Ni含量介于12 at.%之内时,合成产物仍保持Ti70.5Fe29.5共晶合金的相组成,即是由β-Ti固溶体、TiFe和Ti2Fe金属间化合物所组成。但随着Ni含量的增加,合成产物中β-Ti固溶体的数量逐渐减少,而TiFe和Ti2Fe金属间化合物的数量逐渐增加。同时组织形态也由共晶组织逐渐转变为过共晶组织。随着Ni含量的增加,合成样品的致密度逐渐降低;由于受合成样品微观组织和致密性这两种因素的综合作用,致使Ni含量为9 at.%的合成样品具有高的硬度、强度及良好的塑性。     

非晶TiO2薄膜激光晶化

以中频孪生非平衡磁控溅射沉积设备制备的非晶氧化钛薄膜为前驱体,采用激光晶化技术实现了从非晶氧化钛到纳米氧化钛的相变过程。研究结果表明,在所选取的激光功率范围内,晶化氧化钛薄膜主要是由纳米尺度的锐钛矿和金红石所组成。随着激光功率的增大,晶化薄膜中金红石相的含量逐渐增多,晶粒尺寸逐渐增大,硬度、弹性模量及耐磨性逐渐提高。     

非晶硅薄膜激光晶化及其结构分析

以射频(频率为13.6MHz)磁控溅射系统制备的非晶硅薄膜为前驱物,采用激光晶化技术实现从非晶硅薄膜到纳米晶硅薄膜的相变过程。采用拉曼光谱仪和高分辨透射电镜对激光晶化薄膜的组织结构进行了研究。结果表明:薄膜由非晶硅结构转变为微晶硅结构,微晶硅晶粒尺寸在纳米级。激光晶化存在一个最佳工艺参数,功率太高或太低都不利于晶化。     

无线技术的新领域--WUSB

无线USB(WUSB)技术是一个全新的无线传输标准.实现USB(通用串行总线)无线化以后,既可以保持有线USB的高速传输等优点,又可以去掉电缆的羁绊,给各种设备带来更大的便捷和移动性.文中首先介绍了WUSB技术的由来--UWB技术规范的标准化难以确定,然后对WUSB技术的规范标准进行了阐述,最后概述了WUSB技术的发展现状及目前和今后的技术研发重点,并对WUSB的发展前景进行了展望.