Anomalous variations of OFF-State leakage current in poly-Si TFTunder static stress

Studies the anomalous variations of the OFF-state leakage current (I_OFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I_OFF can be attributed to (1) I_OFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) I_OFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T _OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/L_CH)     

气囊内模制作桥面板在华丰湾防洪工程中的应用

采用气囊作内模进行浇筑桥面板混凝土 ,加快了预制桥面板施工进度 ,确保工程施工质量 ,并降低了工程施工成本     

真空微电子三极管几何参数的设计考虑

真空微电子三极管是近年来兴起与发展的真空微电子学中的一类重要器件。本文从真空微三极管的工作特性出发,分析了这类器件中所需考虑的几何参数和工作特性的关系,并给出了一些理论和实验公式,为今后的设计提供一些参考。     

极压,油性添加剂在磨削过程中的作用

油性及极压添加剂为磨削液中主要减摩添加剂，本文从物理及化学两个方面分析了两种添加剂在磨削过程中的作用机理，说明了两种添加剂的相辅作用，并采用不同的磨削液进行了实验验证．     

电流变流体的研究进展

电流变流体是近年来逐渐受人们重视的一种功能材料，本文介绍其国内、外发展过程及研究现状。     

高强度船板纵裂纹的成因及预防

针对高强度船板纵裂纹轧后退废过高的现状，分析原因并优化冶炼、连铸工艺及操作，有效地降低高强度船板的退废率。     

中国延安干部学院

工程概况中国延安干部学院工程建设用地位于陕西省延安市枣园路西端路南。一期用地100亩左右.东西长400m.南北纵深160m左右.基地地势平坦.基地标高比城市主干道枣园路低2m左右。用地南北两侧均为陕北特有的山谷地貌特点。     

CMOS scaling into the nanometer regime

Starting with a brief review on 0.1-μm (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling     

双层辉光离子渗镀钽

介绍了一种新型离子渗镀钽的工艺方法。较好解决了渗镀钽时供给活性钽粒子的总是比方法工艺简单，操作方便，效率高。为充分利用和节约使用昂贵的钽探索了一条实用可行的途径。