Control Requirements for Control Systems: Matching Surety To Risk

Abstract

Auditing Software Development: A Manual With Case Studies, by S. Rao Vallabhaneni. John Wiley and Sons (605 Third Avenue, New York, 10158-0012), 1990, 439 pp. Includes a glossary and bibliography. Price: $75.00, plus shipping and handling charges.

Computer Crime: Techniques For Preventing And Detecting Crime In Financial Institutions, by Gregory Wold and Robert Shriver. Bankers Publishing (60 Gould Center, Rolling Meadows IL 60008), 1989, 255 pp. Includes a glossary. Price: $49, with a discount for BAI members.     

GATED COMMUNITIES AND SPATIAL INEQUALITY

ABSTRACT: In this article we analyze gated communities as a nexus of social and spatial relations within the context of urban inequality. We apply Tickamyer's (2000) sociological framework for incorporating space into the study of inequality, which allows us to substantiate the arguments that the process of gating increases urban inequality. The contributions of this article are three: (1) We generate a new systematic theoretical approach toward the study of gated communities, which we consider as middle range theory; (2) We argue that gated communities reproduce the existing levels of social stratification and that they also define a new, permanent differentiation order in the spatial organization of cities in the United States (in this respect we also arrive at six hypotheses, which can be tested in future research); (3) We introduce the term “gating machine,” where the combination of the interests and actions of local governments, real estate developers, the media, and consumers suggest that prevailing structural conditions assure the future proliferation of gated communities.     

Re-Examination of the Polymorphism of Dicalcium Silicate

Samples of Ca₂SiO₄ were prepared by three different methods. These samples were examined by differential thermal analysis, high-temperature X-ray diffraction, and air quenching of pellets. It was found that the β modification, during cooling, converted completely and rapidly to the γ modification and "dusted" only if it had been heated above 1420†± 10† C. If the sample was not heated above this critical temperature, a mixture of the β and γ forms always resulted at room temperature. The addition of 0.5 weight % of CaO, SiO₂, Al₂0₃, Fe₂0₃, or MgO had no effect on the sequence of phases for samples cooled from above the critical temperature. When, however, these same samples were cooled from below 1410†C, the final room-temperature product was not the same for all samples. On the other hand, the additional 0.5% of Na₂0, K₂O, Cr₂O₃, or B₂0₃ prevented the formation of the β modification regardless of the temperature from which the sample was cooled. The critical heating temperature correlated with the transformation temperature for the α-α inversion. A theory relating this inversion to the completeness of the β→γ transformation is presented.     

Relative Role of Phospholipids, Triacylglycerols, and Cholesterol Esters on Malonaldehyde Formation in Fat Extracted from Chicken Meat

Fresh breast and leg meat was collected from 11-wk-old pullets fed a high protein-low fat starter ration. Lipid oxidation measured in malonaldehyde (MA) equivalents in total fat extracted from meat, and in phospholipids (PL), triacylglycerol (TG), and cholesterol ester (CE) fractions of total fat was determined by an improved TBA assay with antioxidant protection. It was found that breast meat had two-fold less fat than leg. Breast fat contained 70.1% PL, 22.2% TG, and 1.2% CE; leg fat contained 42.9% PL, 51.4% TG, and 0.8% CE. After separation by thin layer chromatography, the individual lipid classes were tested for TBA reactivity. The PL fraction was found to contribute approximately 90% of the MA measured in total fat from chicken meat.     

C-Axis Oriented MOCVD YMnO3 Thin Film and Its Electrical Characteristics in MFIS FeTRAM

Yttrium manganate (YMO) thin films were prepared on SiO₂ buffered silicon as a candidate for ferroelectric transistor random access memory (FeTRAM). The films were deposited by flash evaporated MOCVD at low temperature and post annealed to crystallize the c-axis oriented hexagonal YMO phase. It is found that oxygen content and substrate temperature are major parameters determining c-axis orientation. For the electrical characteristics, P_r (remnant polarization) ～2 μ C/cm² and ? (dielectric constant) ～ 20 are obtained in Pt/YMO/Pt structures. It is also found that a top buffer layer of 30 nm ZrO₂ helps to reduce the leakage current of Pt/top buffer/YMO/SiO₂/Si stack to 10^{? 7} A/cm² and improves the C-V memory window from 0.2 V to 2 V.