百万吨级乙烯冷箱的设计

分析了百万吨级乙烯冷箱的设计难点和采取的对策，介绍杭氧设计、制造的乙烯冷箱的技术参数和设计方案，与国外公司设计方案的比较，说明杭氧乙烯冷箱的设计、制造技术与世界先进水平的差距大大缩小。     

动力配煤高温复合固硫剂研究

分析了高温复合固硫剂各成分的作用，实验研究了在不同配比的燃烧试验下，各成分对燃煤着火和燃烧以及对炉渣固硫的影响，得出了该煤种高温复合固硫剂的最佳配方。     

纳米技术在中药开发中的应用

本文综述了纳米科技与中药制剂相结合的发展，阐述了纳米中药的概念、特性，介绍了纳米中药的制备技术，另外探讨了收集纳米粒子的方法，最后，着重展望了纳米技术在中药制剂中广泛的应用前景。     

Integrated magnetic full wave converter with flexible output inductor

A new integrated magnetic full wave DC/DC power converter that provides flexible transformer design by incorporating an independent output inductor winding is introduced. The transformer is implemented on a traditional three-leg magnetic core. The inductor winding can be separately designed to control the output current ripple. The cross-sectional area of the inductor core leg can be reduced dramatically. The operation and performance of the proposed circuit are verified on a 100 W prototype converter.     

甲基丙烯酸三氟乙酰氧乙酯的聚合

对甲基丙烯酸三氟乙酰氧乙酯(TFAOEMA)的阴离子聚合及原予转移自由基聚合进行了研究。常用的阴离于引发剂如丁基锂、1，1-二苯基已基锂等很难引发TFAOEMA的阴离子聚合，而碱性较弱的引发剂如三乙基铝却容易引发，且产率较高。以氯化亚铜、五甲基二乙基三胺、溴代丙酸乙酯为引发体系的TFAOEMA的本体原子转移自由基聚合符合活性聚合特征。但在四氢呋喃为溶剂的原子转移自由基聚合中却存在活性中心失活现象。以末端含卤素的聚甲基丙烯酸甲酯为大分子引发剂，引发TFAOEMA的原子转移自由基聚合，得到了含氟双嵌段聚合物。     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

试谈高炉冷却壁的检漏及维护

高炉冷却壁的检漏及维护，是炼铁工作者十分关心的问题，本文针对邯钢高炉具体情况，探讨了高炉冷却壁漏水的原因，检漏方法，漏水冷却壁的维护及预防措施。     

用φ20mm离心萃取器两步法制取高纯钇

本文研究了中钇富镧稀土的氧化物溶液在环烷酸中的萃取行为，测定了镧钇组成、温度变化与分离系数的关系；在Ｐ＿（５０７）体系中研究了ｐＨ值与分配比的关系；提出用环烷酸、Ｐ＿（５０７）两种萃取剂制备高纯钇的工艺流程。用８４台φ２０ｍｍ离心萃取器进行了一个月的台架试验，结果证明两种萃取剂有很好的互补性，在满足钇的纯度要求下有较高收率。离心萃取器具有易分相、体系存留量少、液流密闭性好等优点，它更适宜于粘度大、级数多、产品纯度要求高的体系。