基于模式理论光栅椭偏参数反演的数值模拟

将一种广泛用于求解系统优化问题的方法——正单纯形法，求解光栅的椭偏方程。首先，利用求解光栅的傅立叶模式理论对TE和TM波的复反射系数进行求解。然后计算出其相应的椭偏参数(△，Ψ)，并在该值的基础上加入不同偏差的随机高斯噪声，将加入噪声后的值(△m，Ψm)作为模拟测量值。最后使用优化算法进行反演。通过对几种常用面形光栅椭偏参数的数值模拟，一方面表明傅立叶模式理论计算光栅的椭偏参数不仅精度高。而且速度快；另一方面表明利用正单纯形法得到的光栅参数值很接近于正演时假设的参数值，从而从理论上证明了利用椭偏法测量光栅各种光学参数的可行性。     

The First Template‐Free Growth of Crystalline Silicon Microtubes

A simple template‐free high‐temperature evaporation method was developed for the growth of crystalline Si microtubes for the first time. As‐grown Si microtubes were characterized using X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and room‐temperature photoluminescence. The lengths of the Si tubes can reach several hundreds of micrometers; some of them have lengths on the order of millimeters. Each tube has a uniform outer diameter along its entire length, and the typical outer diameter is ≈ 2–3 μm. Most of the tubes have a wall thickness of ≈ 400–500 nm, though a considerable number of them exhibit a very thin wall thickness of ≈ 50 nm. Room‐temperature photoluminescence measurement shows the as‐synthesized Si microtubes have two strong emission peaks centered at ≈ 589 nm and ≈ 617 nm and a weak emission peak centered at ≈ 455 nm. A possible mechanism for the formation of these Si tubes is proposed. We believe that the present discovery of the crystalline Si microtubes will promote further experimental studies on their physical properties and smart applications.     

Moving Least-Squares Differential Quadrature Method for Free Vibration of Antisymmetric Laminates

In this paper, the moving least-squares differential quadrature (MLSDQ) method is employed for free vibration of thick antisymmetric laminates based on the first-order shear deformation theory. The generalized displacements of the laminates are independently approximated with the centered moving least-squares (MLS) technique within each domain of influence. The MLS nodal shape functions and their partial derivatives are computed quickly through back-substitutions after only one LU decomposition. Subsequently, the weighting coefficients in the MLSDQ discretization are determined with the nodal partial derivatives of the MLS shape functions. The MLSDQ method combines the merits of both the differential quadrature and meshless methods which can be conveniently applied to complex domains and irregular discretizations without loss of implementation efficiency and numerical accuracy. The natural frequencies of the laminates with various edge conditions, ply angles, and shapes are calculated and compared with the existing solutions to study the numerical accuracy and stability of the MLSDQ method. Effects of support size, order of completeness of basis functions, and node irregularity on the numerical accuracy are investigated in detail.     

Low-temperature poly-SiGe alloy growth of high gain/speed pin infrared photosensor with gold-induced lateral crystallization (Au-ILC)

The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications.     

A CMOS multichannel 10-Gb/s transceiver

We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification.     

Metastable phase relation and phase equilibria in the Cr2O3-Fe2O3 system

In order to ascertain the metastable phase relation in the Cr₂O₃-Fe₂O₃ system, the existing phases were investigated by X-ray analysis using samples obtained by heating the coprecipitated powders for 1 h at 600–1000°C. There was a metastable two-phase region of Cr₂O₃-rich (CC) and Fe₂O₃-rich (FC) phases below about 940°C. Equilibrium state of 1:1 composition at 600–900°C was considered to be a single phase of the corundum solid solution. The metastable two-phase CC + FC region was suggested to appear probably due to the compositional inhomogeneity in the coprecipitated powders.     

Gamma-irradiation-induced Ag/SiO2 composite films and their optical absorption properties

Small Ag particles or clusters dispersed mesoporous SiO₂ composite films were prepared by a new method: First the matrix SiO₂ films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO₃ solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO₂ films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements.     

A note on the Gauss-Jacobi quadrature formulae for singular integral equations of the second kind

A fast and efficient numerical method based on the Gauss-Jacobi quadrature is described that is suitable for solving Fredholm singular integral equations of the second kind that are frequently encountered in fracture and contact mechanics. Here we concentrate on the case when the unknown function is singular at both ends of the interval. Quadrature formulae involve fixed nodal points and provide exact results for polynomials of degree 2n − 1, where n is the number of nodes. Finally, an application of the method to a plane problem involving complete contact is presented.     

优化项目管理MIS系统方案设计

按照工程项目“五制”管理的要求 ,以规范管理和提升工程质量为系统开发的基础和前提 ,探索适合本行业使用的项目MIS系统设计方案 ,并对其功能模型、数据规划、构造处理模型、数学模型进行分析