An analytical model for alloyed ohmic contacts using a trilayer transmission line model

This paper describes a Transmission Line Model approach to the modeling and analysis of alloyed planar ohmic contacts. It briefly reviews the standard Transmission Line Model (TLM) commonly used to characterize a planar ohmic contact. It is shown that in the case of a typical Au-Ge-Ni alloyed ohmic contact, a more realistic model based on the TLM should take into account the presence of the alloyed layer at the metal-semiconductor interface. In this paper, such a model is described. It is based on three layers and the two interfaces between them, thus forming a Tri-Layer Transmission Line Model (TLTLM). Analytical expressions are derived for the contact resistance Re and the contact end resistance Rc of this structure, together with a current division factor, S. Values for the contact parameters of this TLTLM model are inferred from experimentally reported values of Re and Re for two types of contact. Using the analytical outcomes of the TLTLM, it is shown that the experimental results obtained using a standard TLM can have considerable discrepancies.<>     

Si/SiGe epitaxial-base transistors. I. Materials, physics, andcircuits

A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented     

Results of irradiation treatment in patients with non-resectable oesophageal cancer

Forty-eight patients with non-resectable cancer of the oesophagus and oesophagogastric junction (Group A: Stage I/II, 32; Group B: Stage III/IV, 16) underwent intraluminal Iridium-192 high dose-rate afterloading therapy (5-7 Gy/session, total dose: 5-21 Gy, mean: 12.4 Gy) and external beam irradiation (Karnofsky > or = 80% 50-60 Gy/2 Gy per day; Karnofsky 60-79%: 30 Gy/3 Gy per day). Durable satisfactory palliation (intake of at least semi-solid food) was demonstrated in 96% of patients. The mean survival for group A was 19.1 months and that for group B, 6.9 months, with a 12-month survival rate of 66% (group A) and 0% (group B) (P < 0.001). Local tumour response and complication rate were significantly dose-related with a predicted response rate of 70.5%, and a complication rate of 50% at ERD 129.3 Gy.     

Crescentic glomerulonephritis in interferon-gamma receptor deficient mice

Activation of macrophages by T cells is considered an initiating event in glomerular crescent formation. Since interferon-gamma (INF gamma) is a key mediator in T-cell-mediated activation of macrophages, we decided to test its role in a model of crescentic glomerulonephritis. An anti-glomerular basement membrane (GBM) serum was injected intravenously in presensitized wild-type or IFN gamma receptor deficient (IFN gamma(R)-/-) mice. Glomerulonephritis with glomerular crescents and tubulointerstitial inflammation developed in both strains, even though most evaluated morphological parameters and proteinuria indicated a less severe pathology in the mutant mice compared to the wild type. Thus, IFN gamma is not essential either for glomerular crescent formation or for tubulointerstitial involvement in anti-GBM glomerulonephritis in mice. In conclusion, the role of macrophages in this model might have been overestimated, or other cytokines may compensate for deficient IFN gamma signaling in the activation of macrophages.     

Mine operating accurate stability control with optical fibersensing and Bragg grating technology: the European BRITE/EURAM STABILOSproject

Recent developments of stability control in mines, essentially based on Ge-doped fiber Bragg gratings (FBG) are reported including results about the different aspects of the system: accurate characterizations of FBG, sensor network topology and multiplexing method, user interface design and sensor packaging     

Silicon bipolar chipset for SONET/SDH 10 Gb/s fiber-opticcommunication links

High-speed multiplexers, demultiplexers, frequency dividers, mixers, and amplifiers are key electronic components in high-speed fiber-optic communications systems such as SONET/SDH. In this paper, we present several important digital and analog integrated circuits (IC) which have been developed for use in SONET/SDH 10 Gb/s optical communication links. The circuits have been fabricated in MOSAIC 5E, an advanced silicon bipolar technology (f_T=26 GHz). The resulting chipset which amounts to a total of 10 IC's consists of multiplexers, demultiplexers, a regenerative frequency divider (2:1), a dual output limiting amplifier, and two different types of mixers for clock extraction. Specifically, the design and performance of these IC's and a hybrid clock recovery module are discussed. The high performance and potential low cost of this research chipset show that advanced silicon bipolar circuit technology can play an important role in future multigigabit fiber-optic communication systems     

Transient simulation of heterojunction photodiodes-part II:analysis of resonant cavity enhanced photodetectors

The high-speed response properties of resonant cavity enhanced (RCE) photodetectors have been investigated. The limitations on the high-speed performance of photodiodes and the advantages of RCE-detection are discussed. Transient response of heterojunction photodiodes under pulsed optical illumination has been simulated using the method described in Part I. Results on conventional AlGaAs/GaAs and RCE GaAs/InGaAs heterojunction p-i-n photodiodes are presented. For small area detectors, almost 50% bandwidth improvement along with a two-fold increase in efficiency is predicted for RCE devices over optimized conventional photodiodes. A nearly three-fold enhancement in the bandwidth-efficiency product was shown     

Comparison between real and power optimisation methods for arrayssynthesis of antennas

The authors compare real and power far field patterns synthesis arrays. The synthesised pattern is an optimum approximation to the prescribed power pattern in a minmax sense. A comparison between real and power formulations is realised for shaped (cosecante) and pencil beams