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101.
Xiaolei Su Yan Jia Xiaoqin Liu Junbo Wang Jie Xu Xinhai He Chong Fu Songtao Liu 《Journal of Electronic Materials》2014,43(11):3942-3948
Fe-doped ZnO powders have been synthesized by the coprecipitation method using zinc nitrate [Zn(NO3)2·6H2O] as starting material, urea [CO(NH2)2] as precipitator, and ferric nitrate [Fe(NO3)3·9H2O] as doping source. The microstructure of the prepared powders has been characterized by x-ray diffraction and scanning electron microscopy. Results show that, when the molar ratio of Fe to (Zn + Fe) was less than 0.09, the prepared powder was ZnO(Fe) solid solution, and the ZnFe2O4 impurity phase appeared when the Fe doping content was further increased. The electric permittivity in the frequency range of 8.2 GHz to 12.4 GHz and the average infrared emissivity in the wavelength range of 8 μm to 14 μm have been determined for the prepared powders. The average infrared emissivity decreased with increasing Fe doping content. The real (ε′) and imaginary part (ε″) of the permittivity of the prepared powders showed opposite trends. When the molar ratio of Fe to (Zn + Fe) was 0.03, the prepared Fe-doped ZnO powder demonstrated the best microwave absorption in the frequency range of 8.2 GHz to 12.4 GHz. 相似文献
102.
Internet of Things has received much attention over the past de-cade.With the rapid increase in the use of smart devices,we arenow able to collect big data on a daily basis.The data we are gather-ing and related problems are becoming more complex and uncer-tain.Researchers have therefore turned to AI as an efficient way ofdealing with the problems created by big data.This special issue of ZTE 相似文献
103.
Wenyu Chen Xin Fu Jun Zou Huayong Yang Xiaodong Ruan Guofang Gong 《Microelectronic Engineering》2010,87(5-8):1070-1073
Immersion lithography seeks to extend the resolution of optical lithography by filling the gap between the final optical element and the wafer with a liquid characterized by a high index of refraction. The semiconductor industry demands high throughput, leading to relatively large wafer scanning velocities and accelerations. For higher scanning velocities, an issue that has been identified is the deposition of the immersion liquid while confining a relatively small amount of liquid to the under-lens region. Liquid loss occurs at the receding contact line that forms when a substrate is withdrawn from a liquid, which potentially leads to defects on printed patterns. There has been substantial prior work relative to understanding and building semi-empirical correlations and numerical models to investigate this behavior of the receding three-phase contact line. In the current work, a new liquid injection and collection model with analytic solutions is presented and compared with experimental results, in which the critical velocity for liquid loss is mainly a function of the vacuum degree, the injection flow rate, the properties of the immersion liquid. This correlation allows the critical velocity to be predicted with a given gap height between wafer and lens using only a measurement of the injection speed and knowledge of the fluid properties. Experimentally, glycerin–water mixtures of varying viscosities and different injection flow rates were tested, with variable outlet vacuum degree and inlet speed, showing a mean average error within 12%. This correlation represents a useful tool that can serve to approximately guide the development of fluid control for immersion systems as well as to evaluate alternative immersion fluid candidates to minimize liquid deposition while maximizing throughput. 相似文献
104.
Falkowski B.J. Cheng Fu 《IEEE transactions on circuits and systems. I, Regular papers》2004,51(6):1132-1147
In this paper, the family of fast linearly independent ternary arithmetic (LITA) transforms, which possesses fast forward and inverse butterfly diagrams, has been identified. This family is recursively defined and has consistent formulas relating forward and inverse transform matrices. The LITA transforms, which require horizontal or vertical permutations to have fast transforms are also discussed. Computational costs of the calculation for presented transforms are also discussed and compared with multipolarity ternary arithmetic transform for ternary benchmark functions. 相似文献
105.
本文用微机控制使反射镜扫描激光束,给出了CO_2激光的光强分布;用绕着光轴旋转的ZuSe布氏窗的反射和透射光强,给出了激光的偏振度。着重研究了内腔CO_2激光器的输出强度,增益,模式,能量分布,以及偏振度等光学参量间的相互关系。 相似文献
106.
Yuan J Zhao G Fu Y Li Z Katsaggelos AK Wu Y 《IEEE transactions on image processing》2012,21(4):2207-2219
Given a collection of images or a short video sequence, we define a thematic object as the key object that frequently appears and is the representative of the visual contents. Successful discovery of the thematic object is helpful for object search and tagging, video summarization and understanding, etc. However, this task is challenging because 1) there lacks a priori knowledge of the thematic objects, such as their shapes, scales, locations, and times of re-occurrences, and 2) the thematic object of interest can be under severe variations in appearances due to viewpoint and lighting condition changes, scale variations, etc. Instead of using a top-down generative model to discover thematic visual patterns, we propose a novel bottom-up approach to gradually prune uncommon local visual primitives and recover the thematic objects. A multilayer candidate pruning procedure is designed to accelerate the image data mining process. Our solution can efficiently locate thematic objects of various sizes and can tolerate large appearance variations of the same thematic object. Experiments on challenging image and video data sets and comparisons with existing methods validate the effectiveness of our method. 相似文献
107.
108.
Wireless Networks - As data dissemination is of great importance for applications in connected vehicular networks (VANETs), we aim to facilitate the performance of data dissemination in this study.... 相似文献
109.
110.
从相变存储器(phase change random access memory,PCRAM)的基本结构和工作原理出发,首先介绍了PCRAM的技术优势、面临的技术挑战、常用的解决策略以及存在的相应问题;接着阐述了在微电子加工中广泛应用的关键工艺——侧墙技术,并将其在PCRAM中的应用成果进行了分类;然后从加热电极的制备、相变材料限制结构的制备、新相变材料的制备与表征和器件间互联等4个方面展开叙述;最后展望了该技术在相变存储领域应用发展的趋势。侧墙技术因其具备自对准的特点,制备工艺可控性好,制备精度不依赖于光刻精度,在纳米技术飞速发展的今天,侧墙技术将会在更高精度上发挥其作用。 相似文献