Budding of fowlpox and pigeonpox viruses at the surface of infected cells

Chick embryo fibroblasts and chorioallantoic membranes infected with fowlpox virus (FWPV) or pigeonpox virus (PPV) were examined by transmission and scanning electron microscopy. Immature virus particles were observed in finely granular areas, i.e. virus factories, of the cytoplasm. These particles had various forms depending on their stages of development. Many tubular structures were also seen in these regions. Mature virus particles with ellipsoidal or brick-shaped forms enclosing electron-dense cores were detected throughout the cytoplasm. Notably, there was a high frequency of virus budding at the cell surface, but only occasional virus wrapping in the cytoplasm. Another remarkable feature of the infected cells was accumulation of many virions just beneath the plasma membrane, indicating that this phenomenon is closely related to virus budding. Based on the observed frequency of budding, this mechanism seems to be the predominant way for FWPV and PPV to exit the cell.     

A metaheuristic-based downlink power allocation for LTE/LTE-A cellular deployments

The explosive growth of cellular networks makes their deployment and maintenance more and more complex, time consuming, and expensive. Self-Organizing Networks have been recognized as a promising way to alleviate this problem by minimizing human intervention in such processes. This paper introduces a novel multiobjective framework, based on evolutionary optimization, aiming at improving network performance and users Quality of Service. By tuning the transmitted power at each cell, average intercell interference levels are minimized. The design of the proposed scheme is feasible for distributed implementations in Long Term Evolution (LTE) and LTE-Advanced networks and its operation is compatible with current specifications. The framework is able to provide effective network-specific optimization and obtained results show that gains in terms of network capacity and cell edge performance are 5 and 10 %, respectively. Energy savings always accompanied such enhancements with reductions up to 35 %.     

Ionic‐Liquid Gating of InAs Nanowire‐Based Field‐Effect Transistors

Here, the operation of a field‐effect transistor based on a single InAs nanowire gated by an ionic liquid is reported. Liquid gating yields very efficient carrier modulation with a transconductance value 30 times larger than standard back gating with the SiO₂/Si₊₊ substrate. Thanks to this wide modulation, the controlled evolution from semiconductor to metallic‐like behavior in the nanowire is shown. This work provides the first systematic study of ionic‐liquid gating in electronic devices based on individual III–V semiconductor nanowires: this architecture opens the way to a wide range of fundamental and applied studies from the phase transitions to bioelectronics.     

Analysis of the Stakeholder Engagement in the Deployment of Renewables and Smart Grid Technologies

The implementation of higher shares of renewables in a global energy mix has to be accompanied by simultaneous deployment of enabling smart grid technologies (SGTs). This combination will inevitably lead to a revolutionary change in a conventional energy system, particularly, the shifting role of consumers to prosumers. But resistance may arise from such a dramatic shift, since it is associated with high uncertainty in conjunction with increasing responsibilities of all stakeholders, the urgent need of effective control, and the development of a process. To ensure the positive influence, coherent actions of all players, and appropriate treatment of the spots of resistance, the analysis of the interplay between key stakeholders has been done. The paper introduces the framework for stakeholders' analysis, applies it on the European Union (EU) example, and provides recommendations to reduce the resistance of SGTs deployment.     

L-band Er3+-doped fluorophosphate glass-fibre amplifier

The first L-band EDFA to employ fluorophosphate glass as the host glass material has been realised. The lowest fibre loss yet reported for fluorophosphate glass fibre of 0.7 dB/m is achieved. The amplifier achieved a flat gain with an average value of 21.7 dB in the L-band.     

A Hybrid AlGaInAs–Silicon Evanescent Amplifier

We report a hybrid AlGaInAs-silicon evanescent amplifier incorporating a silicon waveguide with a III-V gain medium. The optical mode of the hybrid amplifier is mostly confined to the silicon waveguide and evanescently coupled to the AlGaInAs quantum-well (QW) region where optical gain is provided by electrical current injection. These two different material systems are bonded by low-temperature oxygen plasma assisted wafer bonding at 300 degC. The fabricated device shows 13 dB of maximum chip gain with 11 dBm of output saturation power. Evanescent coupling allows a lower active region confinement factor to provide a higher saturation output power than amplifiers with centered QWs, which is important for applications that require linear amplification     

Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology

Buried‐channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface states degrade the electrical properties of the starting material. Here, a 2D hole gas of high mobility (5 × 10⁵ cm² V^?1 s^?1) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface. The top‐gate of a dopant‐less field effect transistor controls the channel carrier density confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The high mobility leads to mean free paths ≈ 6 µm, setting new benchmarks for holes in shallow field effect transistors. The high mobility, along with a percolation density of 1.2 × 10¹¹cm^?2, light effective mass (0.09m_e), and high effective g‐factor (up to 9.2) highlight the potential of undoped Ge/SiGe as a low‐disorder material platform for hybrid quantum technologies.     

Effect of mixed solvents on PCDTBT:PC70BM based solar cells

We investigated the effect of solvents on the morphology, charge transport and device performance of poly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT) and [6,6]-phenyl C71-butyric acid methyl ester (PC₇₀BM) based solar cells. To carry out this investigation, chloroform and 1,2-dichlorobenzene were chosen as good solvents of the two compounds. Films prepared with chloroform exhibit larger domains than those prepared with 1,2-dichlorobenzene and their size increases with the amount of PC₇₀BM. Fine tuning of the domain size was realized by using a solvent of mixed chloroform and 1,2-dichlorobenzene. At a mixing ratio of 50%:50%, a power conversion efficiency of 6.1% was achieved on PCDTBT:PC₇₀BM (1:3) devices with an active area of 1 cm², under air mass 1.5 global (AM 1.5 G) irradiation at 100 mW/cm².     

Impact of Ge-Sb-Te compound engineering on the set operation performance in phase-change memories

The phase-change memory (PCM) technology is considered as one of the most attractive non-volatile memory concepts for next generation data storage. It relies on the ability of a chalcogenide material belonging to the Ge-Sb-Te compound system to reversibly change its phase between two stable states, namely the poly-crystalline low-resistive state and the amorphous high-resistive state, allowing the storage of the logical bit. A careful study of the phase-change material properties in terms of the set operation performance, the program window and the electrical switching parameters as a function of composition is very attractive in order to enlarge the possible PCM application spectrum. Concerning the set performance, a crystallization kinetics based interpretation of the observed behavior measured on different Ge-Sb-Te compounds is provided, allowing a physics-based comprehension of the reset-to-set transition.     

Metallic Glass as a Mechanical Material for Microscanners

Microelectromechanical system (MEMS) actuators essentially have movable silicon structures where the mechanical motion can be activated electronically. The microscanner is one of the most successfully commercialized MEMS devices which are widely used for collecting optical information, manipulating light, and displaying images. While silicon is abundant, it is also brittle and stiff and when microprocessed, defects are not uncommon. These defects result in weakness under torsional stress and this has been the key factor limiting the scanning performance of the microscanner. Here a metallic glass (MG)‐based microscanner is reported with MG as the material for the moving torsion bars. The low elastic modulus, high fracture toughness, and high strength of MG offers, for the first time, an ultralarge rotating angle of 146° with power consumption lowered to the microwatt range, and a smaller driving force and better actuation performance, than conventional single crystal silicon and polycrystalline silicon. The high spatial resolution and large scanning field of the MG‐based microscanner are demonstrated in the tomographic imaging of a human finger. This development of an MG‐based MEMS possibly opens a new field of low‐powered MEMS devices with extreme actuation and enhanced sensing.