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141.
This paper presents a simple alternative for an electronic ballast operating in self-sustained oscillating mode with dimming capability for fluorescent lamps. A simple modification in one of the gate drivers side circuit allows the lamp to dim without compromising the simplicity, reliability, and low cost which characterize the self-oscillating electronic ballast (SOEB). A qualitative analysis is presented to explain the behavior of the proposed self-oscillating electronic ballast with dimming feature. In addition, the stability and the key equations for the design are derived using the extended Nyquist criterion and describing function method. Experimental results from two 40-W electronic ballasts are presented to demonstrate the performance and to validate the analysis carried out.  相似文献   
142.
Over the last five years, many activities have focused on the unexploited field of carrying out reactions on small scales. Due to the rapid development of new components, this paper deals with recent developments only in a compressed form. An important point is the analysis of possible plant concepts for microreactors and whether these are a sensible option. Due to the enormous difference in size between the microchannels and the fluid periphera of possible components this is not just a technical question. It touches on the microtechnology concept as a whole. The direction in which the field should be developed and which measures can be taken to influence its development are questions that are addressed here with respect to the big industrial interest in microreactors.  相似文献   
143.
In recent years, advancements in three technology areas, microelectronics, MEMS sensors, and GPS receivers, have allowed small UAVs to overcome critical deficiencies and become practical for insertion into the military mainstream. The maturation and commercialization of these technologies have resulted in readily available components that have decreased in both size and cost, to the point where truly low-cost, highly capable, small UAVs are possible. In particular, inertial devices such as MEMS accelerometers and angular rate sensors, pressure sensors, and magnetometers have reached the point where they are reliable, accurate, and affordable. These devices allow the determination of vehicle state with the precision required to enable autonomous flight. In addition, advanced microelectronic devices, such as digital signal processors, field programmable gate arrays, and microcontrollers have enabled sophisticated flight control functions, including fully autonomous flight using GPS waypoints. In combination, these advances have allowed small UAVs such as Pointer, Raven, and Dragon Eye to move into full-scale production and continue to allow the progression of UAVs into smaller and smaller packages. To address several of the deployment issues connected with small UAVs, a gun-launched version, along with the underpinning technologies, is under development. This device represents a clear departure from conventional UAVs with several clear advantages; however, it also contains severe design challenges, as well as test and evaluation dilemmas. An option of this type is envisioned not as a replacement for conventional small UAVs but rather as an augmenting capability.  相似文献   
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The damage imposed on SiO x deposited nylon 6 films as a result of abrasion with a cotton cloth and Gelboflex testing was examined by evaluating the rate at which copper plates, which were enveloped by the damaged films, were corroded by H2S. Abrasion with a cotton cloth caused some micro-cracking of the SiO x layer and the permeation rate of H2S approached that of the uncoated nylon 6 film. Damage to the SiO x layer by twisting and crushing progressed gradually with the number of Gelboflex test cycles and correspondingly the corrosion rate of the copper plates increased. Comparison of the corrosion rates of the copper plates kept in the pouches made of various commercial films with those obtained for the damaged SiO x deposited nylon 6 films showed a clear relationship between the H2 permeation rate of the films and the corrosion rate of the copper plates by H2S.  相似文献   
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Separation tests using hollow-fibre modules were performed for the difficult selective extraction of trivalent actinides over fission lanthanides from acidic media. This article shows that with 2,6-di(5,6-dipropyl-1,2,4-triazin-3-yl)pyridine as the extractant, up to 94% americium could be extracted from 1.0 kmol/m3 HNO3, with minimal lanthanide co-extraction. Using a synergistic mixture of bis(chlorophenyl)dithiophosphinic acid and tri-n-octyl phosphine oxide, tests were performed on extraction, lanthanide scrubbing and stripping. In the extraction test, up to 99.99% americium could be extracted from 0.5 kmol/m3 HNO3, with approximately one third of the lanthanides being co-extracted. Mass transfer calculations using a consistent set of input data showed good agreement with the experiments.  相似文献   
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A 1 V switched-capacitor (SC) bandpass sigma-delta (/spl Sigma//spl Delta/) modulator is realized using a high-speed switched-opamp (SO) technique with a sampling frequency of up to 50 MHz, which is improved ten times more than prior 1 V SO designs and comparable to the performance of the state-of-the-art SC circuits that operate at much higher supply voltages. On the system level, a fast-settling double-sampling SC biquadratic filter architecture is proposed to achieve high-speed operation. A low-voltage double-sampling finite-gain-compensation technique is employed to realize a high-resolution /spl Sigma//spl Delta/ modulator using only low-DC-gain opamps to maximize the speed and to reduce power dissipation. On the circuit level, a fast-switching methodology is proposed for the design of the switchable opamps to achieve a switching frequency up to 50 MHz. Implemented in a 0.35-/spl mu/m CMOS process (V/sub TP/=0.82 V and V/sub TN/=0.65 V) and at 1 V supply, the modulator achieves a measured peak signal-to-noise-and-distortion ratio (SNDR) of 42.3 dB at 10.7 MHz with a signal bandwidth of 200 kHz, while dissipating 12 mW and occupying a chip area of 1.3 mm/sup 2/.  相似文献   
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