Effects of Light, Oxygen, and pH on the Absorbance of 2,2-Diphenyl-1-picrylhydrazyl

ABSTRACT: The absorbance of 2,2-diphenyl-1-picrylhydrazyl (DPPH) at 517 nm in methanol and acetone decreased by 20 and 35% for 120 min at 25 °C under light, respectively; in the dark it did not change significantly for 150 min. Decomposition of DPPH under 21% oxygen after 90 min under light was significantly higher than that under 1% oxygen. Absorbance of DPPH in pH 4 buffer solution in methanol, and in pH 10 buffer solution in acetone, decreased by 55 and 80%, respectively, under light for 120 min. The evaluation of antioxidant activity by the changes of DPPH absorbance should be carefully interpreted since the absorbance of DPPH at 517 nm is decreased by light, oxygen, pH, and type of solvent in addition to the antioxidant.     

水溶液辐射分解产物对金属材料腐蚀的影响

实验研究了水辐射分解作用对高放废物深地质处置容器材料的影响。在高放废物深地质处置库附近的地下水,受辐射线作用后分解出氧、氢和氧化产物(例如H_2O_2等),于是在高放废物容器周围形成一个氧化场,导致高放废物中的某些重要放射性核素(例如U,Np和Tc)易溶于水,并向远域迁移。本实验中的含FeSO_4(0.13 mol/L)水溶液在吸收剂量为0、20、60、180、500kGy的射线作用下,其氧化还原电位(Eh)值由+357mV增至+414 mV;在不同吸收剂量的射线作用下,金属Cu、金属Al、0.357 mv金属Fe和不锈钢(后者是我国拟采用的高放废物包装容器材料),在水溶液中的氧化侵蚀强度,分别比在无辐射情况下的大0.2-6.1倍。     

Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures

Investigation of the tunneling conductivity σ _d(V) of structures made on a highly doped, narrow-gap p-type semiconductor HgCdTe reveals an abrupt increase in this quantity at voltages corresponding to the start of tunneling into the conduction band. It is shown that the observed functions σ _d(V) cannot be described in the framework of a model based on single-particle tunneling. It is proposed that the abrupt increase in σ _d(V) is attributable to tunneling into exciton states. Fiz. Tekh. Poluprovodn. 32, 1069–1072 (September 1998)     

国际乳业的热点论题：蛋白质标准化

介绍了蛋白质的标准化这一国际乳品界正热的研究和讨论题目，综述了蛋白质标准化的必要性和世界上目前采用的方法，展望了膜技术在蛋白质标准化上的应用前景。     

地基设计基本原则的探讨

地基设计是整个建（构）筑物设计中的重要组成部分，它关系到建（构）筑物的安全及其功能能否正常发挥。本文着重分析探讨了在地基设计中应遵循的原则及注意事项。以保证建（构）筑物的安全和正常使用，充分发挥地基的作用。     

Analysis of culture fluorescence by a fiber-optic sensor inNicotiana tabacum plant cell culture

The on-line sensing of viable cell weight in plant cell culture process is applied to analysis and control of process. The fiber-optic fluorescence sensor was constructed to measure the NADH-dependent fluorescence inNicotiana tabacum plant cell culture and the analysis of fluorescence signal was done to be correlated with the viable cell weight. The structured kinetic model for cell growth was proposed to estimate the theoretical viable cell weight. The dimensional analysis was proposed for the interpretation of fluorescence signal, in which the path length, the inner filter effect and the hydrodynamic conditions were considered as the key factors on fluorescence signal. The dimensional analysis and empirical correlation of fluorescence signal to viable cell weight was applied to the interpretation of the detected fluorescence signal during cultivation. The proposed interpretation of fluorescence signal using dimensional analysis was well correlated with the viable cell weight estimated by the structured kinetic model as well as by empirical correlation.     

水闸闸室化算梯形横截面上不平衡剪力的分配计算

当地弹性地基梁法计算非岩石地基的水闸底板应力时，首先要求解出不平衡剪力，当闸墩截面选择梯形时（主要是边墩），常用方法是作图法，这既有误差又繁琐。所以就此推导出一个公式，可直接求解平衡剪力。     

一种派生式与创成式相结合的CAPP系统

本文结合为某机械厂开发的实用计算机辅助工艺设计系统(JJCAPP),论述了一种兼有派生式和创成式特点的综合式工艺自动设计方法.     

A 44-GHz monolithic waveguide plane-wave amplifier with improvedunit cell design [using pHEMTs]

A 44-GHz monolithic waveguide plane-wave amplifier (PWA) with improved unit cell design is presented in this paper. The unit cell is a two-stage direct-coupled design and satisfies size, bistability, and stability requirements of the waveguide PWA. The ultra-compact unit cell had a cell size of 0.8 mm², and showed a small-signal gain of 8 dB and an output power of 15 dBm at 44 GHz with a corresponding dc-to-RF efficiency of 10%. A monolithic waveguide PWA using these unit cells showed a “flange-to-flange” gain of 5 dB, an output power of 0.3 W, and an efficiency of 2% at 44 GHz     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.