In a backbone-assisted industrial wireless network (BAIWN), the technology of successive interference cancellation (SIC) based non-orthogonal multiple access (NOMA) provides potential solutions for improving the delay performance. Previous work emphasizes minimizing the transmission delay by user scheduling without considering power control. However, power control is beneficial for SIC-based NOMA to exploit the power domain and manage co-channel interference to simultaneously serve multiple user nodes with the high spectral and time resource utilization characteristics. In this paper, we consider joint power control and user scheduling to study the scheduling time minimization problem (STMP) with given traffic demands in BAIWNs. Specifically, STMP is formulated as an integer programming problem, which is NP-hard. To tackle the NP-hard problem, we propose a conflict graph-based greedy algorithm, to obtain a sub-optimal solution with low complexity. As a good feature, the decisions of power control and user scheduling can be made by the proposed algorithm only according to the channel state information and traffic demands. The experimental results show that compared with the other methods, the proposed method effectively improves the delay performance regardless of the channel states or the network scales.
Zn3As2 is an important p‐type semiconductor with the merit of high effective mobility. The synthesis of single‐crystalline Zn3As2 nanowires (NWs) via a simple chemical vapor deposition method is reported. High‐performance single Zn3As2 NW field‐effect transistors (FETs) on rigid SiO2/Si substrates and visible‐light photodetectors on rigid and flexible substrates are fabricated and studied. As‐fabricated single‐NW FETs exhibit typical p‐type transistor characteristics with the features of high mobility (305.5 cm2 V?1 s?1) and a high Ion/Ioff ratio (105). Single‐NW photodetectors on SiO2/Si substrate show good sensitivity to visible light. Using the contact printing process, large‐scale ordered Zn3As2 NW arrays are successfully assembled on SiO2/Si substrate to prepare NW thin‐film transistors and photodetectors. The NW‐array photodetectors on rigid SiO2/Si substrate and flexible PET substrate exhibit enhanced optoelectronic performance compared with the single‐NW devices. The results reveal that the p‐type Zn3As2 NWs have important applications in future electronic and optoelectronic devices. 相似文献