Dopant Diffusion Equilibrium Overcoming Impurity Loss of Doped QDs for Multimode Anti-Counterfeiting and Encryption

High ion diffusivity of Cu⁺ dopants accelerates outdiffusion in quantum dots (QDs) at high temperatures. This kind of self-purification gives rise to a sharp decrease in dopant photoluminescence (PL) intensity. Herein, a dopant diffusion equilibrium strategy is developed by introducing extra Cu⁺ in the epitaxial growth process. By preventing the loss of dopant Cu⁺, both the decrease of dopant PL and increase of band-edge PL intensity are successfully suppressed. The coexistence of visible and invisible near-infrared (NIR) PL bands for Cu-doped CdSe@CdS QDs demonstrates their novel multimode anti-counterfeiting/encryption potential. Via printing by combined using of intrinsic and doped QD “inks” with visible and invisible NIR emissions, respectively, the bulk-sized patterns, texts, and numerals can achieve visible–invisible PL synergetic confidential information multimode anti-counterfeiting and encryption.     

Si衬底InGaN/GaN多量子阱LED外延材料的微结构

用透射电子显微镜(TEM)和X射线双晶衍射仪(DCXRD)对在Si(111)衬底上生长的InGaN/GaN多量子阱(MQW)LED外延材料的微结构进行了观察和分析.从TEM高分辨像观察到,在Si和AlN界面处未形成SixNy非晶层,在GaN/AlN界面附近的GaN上有堆垛层错存在,多量子阱的阱(InGaN)和垒(GaN)界面明锐、厚度均匀;TEM和DCXRD进一步分析表明MQW附近n型GaN的位错密度为10acm-2量级,其中多数为b=1/3〈112-0〉的刃位错.     

液相添加剂对PTCR陶瓷电性能的影响

液相添加剂ＡＳＴ（Ａｌ２Ｏ３＋ＳｉＯ２＋ＴｉＯ２）对ＢａＴｉＯ３陶瓷材料电性能的影响很大，随着Ａｌ２Ｏ３含量的增加，材料的电性能降低；ＳｉＯ２、ＴｉＯ２的物理特性对材料电性能影响较大；过量ＴｉＯ２对材料ＰＴＣ效应有重要影响，适当过量ＴｉＯ２含量，可得到性能优良的ＰＴＣＲ陶瓷。     

Matrix unit cell scheduler (MUCS) for input-buffered ATM switches

This paper presents a novel matrix unit cell scheduler (MUCS) for input-buffered asynchronous transfer mode (ATM) switches. The MUCS concept originates from a heuristic strategy that leads to an optimal solution for cell scheduling. Numerical analysis indicates that input-buffered ATM switches scheduled by MUCS can utilize nearly 100% of the available link bandwidth. A transistor-level MUCS circuit has been designed and verified using HSPICE. The circuit features a regular structure, minimal interconnects, and a low transistor count. HSPICE simulation indicates that using 2-μm CMOS technology, the MUCS circuit can operate at clock frequency of 100 MHz     

圆形封闭水箱非稳态数值模拟

采用数值方法对圆形封闭水箱内放置两根加热管的二维流动传热进行了非稳态数值模拟,探讨了Ra数从104到107四种情况和封闭水箱的加热管不同摆放位置下的流动和换热;对流场和温度场进行了分析,讨论了不同情况下加热管平均努赛尔数(Nuavg)的变化情况。数值模拟结果表明,随着Ra数增大水箱内的流动表现出了很大变化,决定了传热是导热或者是对流;两个水平加热管在水箱存在最佳的放置距离,这样可以使自然对流情况下的换热达到最好。     

考虑纵向磁场的等离子体介质切伦可夫脉塞

在介质切伦可夫脉塞中加入背景等离子体可有效地提高器件的效率和微波输出功率。本文通过求解束-等离子体、内衬介质的波导色散方程,重点分析了纵向均匀磁场对等离子体介质切伦可夫脉塞注波互作用的影响,给出了磁场、等离子体密度、介质参量等对线性空间增长率和能量比的影响曲线。     

Analysis for the double staggered ladder circuit

A new type of mm-wave slow wave system, double staggered ladder circuit is analyzed in this paper, by means of “average cavity field method” and three-dimensional finite element method. The influence of the electron beam channel on the dispersion characteristics is discussed. An experimental research is made, the experimental results agree well with the theoretical one.     

西湖凹陷中部西斜坡地区超压成因机制

沉积盆地超压成因研究已取得了重要进展,关于超压主要成因的认识也发生了重要变化,以往一些被普遍认为属于典型不均衡压实成因的超压已被部分或完全否定,生烃作用作为超压成因的普遍性得到愈来愈多的证实。西湖凹陷多个构造带的不同层位均发育超压,目前认为超压的形成仍然离不开不均衡压实（欠压实作用）的贡献。根据异常压力形成的基本地质条件和异常压力产生的地质、地球物理效应两方面因素,利用测井曲线组合分析法、鲍尔斯法（加载-卸载曲线法）、声波速度-密度交会图法、孔隙度对比法、压力计算反推法以及综合分析法系统解剖分析了西湖凹陷中部西斜坡地区平湖组不同岩性异常压力成因。研究结果表明：西湖凹陷中部西斜坡泥岩中烃源岩超压主要为自源生烃增压,非烃源岩超压为邻源压力传导成因。储层中至少存在常压-超压型和常压-超压-常压型两种压力结构类型,异常压力自南向北顶界面逐渐变深,主要为油气在生烃增压驱动下向储层运移过程中的压力传导所致。     

无醛或低醛树脂整理剂的筛选和应用

针对甲醛对人体的危害，介绍了国内外甲醛在内衣和外衣上的最低限量标准；并对国内外生产的服装衬样品进行了成品释放甲醛量的测试；最后筛选了无醛和低醛树脂整理剂并在服装衬布上应用。