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High efficient LED structures covering the spectral range of 1.6–2.4 μm have been developed on the basis of GaSb and its solid solutions. The electroluminescent characteristics and their temperature and current dependences have been studied. The radiative and nonradiative recombination mechanisms and their effect on the quantum efficiency have been investigated. A quantum efficiency of 40–60% has been obtained in the quasi-steady mode at room temperature. A short-pulse optical power of 170 mW was reached. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 8, 2003, pp. 996–1009. Original Russian Text Copyright ? 2003 by Stoyanov, Zhurtanov, Astakhova, Imenkov, Yakovlev.  相似文献   
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Accurate and reliable decision making in oncological prognosis can help in the planning of suitable surgery and therapy, and generally, improve patient management through the different stages of the disease. In recent years, several prognostic markers have been used as indicators of disease progression in oncology. However, the rapid increase in the discovery of novel prognostic markers resulting from the development in medical technology, has dictated the need for developing reliable methods for extracting clinically significant markers where complex and nonlinear interactions between these markers naturally exist. The aim of this paper is to investigate the fuzzy k-nearest neighbor (FK-NN) classifier as a fuzzy logic method that provides a certainty degree for prognostic decision and assessment of the markers, and to compare it with: 1) logistic regression as a statistical method and 2) multilayer feedforward backpropagation neural networks an artificial neural-network tool, the latter two techniques having been widely used for oncological prognosis. In order to achieve this aim, breast and prostate cancer data sets are considered as benchmarks for this analysis. The overall results obtained indicate that the FK-NN-based method yields the highest predictive accuracy, and that it has produced a more reliable prognostic marker model than both the statistical and artificial neural-network-based methods.  相似文献   
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In this brief, the well-known switched-current (SI) filtering technique is revisited using the concept of the square-root domain (SRD) filtering. It is proved that SI filters are a subclass of the SRD filters, where sampled-data signal processing is performed. This is achieved by considering typical lossless and lossy SRD sampled-data integrator configurations, using a set of complementary SRD operators which are based on the quadratic I-V relationship of MOS transistor operated in the saturation. Circuit examples are given, where linear-domain integrator and third-order filter configurations were derived using appropriate SRD sampled-data building blocks  相似文献   
26.
Magnetically induced non-Faraday nonreciprocity in a fiber-optic gyroscope   总被引:1,自引:0,他引:1  
Optical phase nonreciprocity is found to appear in fiber-optic gyroscopes as a result of a magnetically induced distortion of a propagating fiber mode. It is shown that this nonreciprocity places a limitation on the magnetic stability of a gyroscope.  相似文献   
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Mössbauer effect measurements and physicochemical analysis demonstrate that annealing of amorphous Fe–P–Mn alloys leads to the formation of a nanocrystalline structure.  相似文献   
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Exposure to ammonia (NH3) increases the dark current (DC) in nanocrystalline silicon. Light soaking (LS) for short periods also enhances the dark current, which remains at a high value for a long time. Pumping alone is unable to restore the initial annealed state, but annealing brings it back. The final state obtained by LS and NH3 exposure depends on the order in which they are performed. Evaporated selenium (Se) deposited on nanocrystalline silicon decreases the DC. These effects cannot be explained entirely by the presence of a-Si : H alone, in our sample. DC and photoluminescence (PL) measurements indicate the presence of two types of center in our sample, which behave differently when exposed to NH3.  相似文献   
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A method of measuring and identifying the static parameters of a bipolar transistor is considered. The characteristic of the transistor, from which the parameters of the model are determined, is chosen depending on what group the calculated parameters belong to. The characteristics are measured in such a way that the equations of the model describing them can be reduced to the simplest form.  相似文献   
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