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211.
Tsang T.K.K. Kuan-Yu Lin El-Gamal M.N. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2008,55(3):214-218
This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology. 相似文献
212.
A theory describing the optical orientation and Hanle effect for holes in quantum wells or quantum dots based on cubic semiconductors is developed. It is demonstrated that the presence of internal or external strain in quantum-confinement heterostructures leads to the dependence of the Hanle effect on the orientation of the magnetic field with respect to the heterostructure growth axis. 相似文献
213.
N. N. Zalogin A. V. Sknarya 《Journal of Communications Technology and Electronics》2008,53(10):1233-1239
The problems related to digitization of sonar compound analog sounding signals reflected from a target are considered. With the use of mathematical simulation, it is shown that, in the case of the most efficient Kotel’nikov digitization, errors occur that impede correct correlation signal processing. This difficulty can be overcome via a reduction of the sampling interval by a factor of 2 to 4 relative to the interval proposed by Kotel’nikov. 相似文献
214.
V. N. Jmerik A. M. Mizerov T. V. Shubina A. V. Sakharov A. A. Sitnikova P. S. Kop’ev S. V. Ivanov E. V. Lutsenko A. V. Danilchyk N. V. Rzheutskii G. P. Yablonskii 《Semiconductors》2008,42(12):1420-1426
Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells. Structural and optical properties of the Al x Ga1 ? x N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al2O3 substrates, heterostructures for light-emitting diodes with Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm. 相似文献
215.
This paper presents the mass transfer results from an impinging liquid jet to a rotating disk. The mass transfer coefficients were measured using the electrochemical limiting diffusion current technique (ELDCT). Rotational Reynolds number (Rer) in the range of 3.4 × 104–1.2 × 105, jet Reynolds number (Rej) 1.7 × 104–5.3 × 104 and non-dimensional jet-to-disk spacing (H/d) 2–8 were taken into consideration as parameters. It was found that the jet impingement resulted in a substantial enhancement in the mass transfer compared to the case of the rotating disk without jet. 相似文献
216.
A. V. Lyutetskii N. A. Pikhtin S. O. Slipchenko N. V. Fetisova A. Yu. Leshko E. G. Golikova Yu. A. Ryaboshtan I. S. Tarasov 《Technical Physics Letters》2003,29(4):290-293
Separate confinement InGaAsP/InP laser heterostructures were grown by metalorganic-hydride vapor-phase epitaxy. High-power single-mode laser diodes of mesastripe design based on these heterostructures operate in a wavelength interval of 1.7–1.8 μm with a maximum continuous room temperature output power of 150 mW. The single-mode lasing regime is maintained up to an output power level of 100 mW. 相似文献
217.
The main phase transformations during synthesis of β‐sialon from kaolin of the Prosyanovskii deposit (Ukraine) under test-industrial production conditions have been studied. Sialon was prepared by carbothermal reduction in graphite-tube furnaces in nitrogen. It is shown that the process is characterized by the simultaneous occurrence of several chemical reactions with formation of intermediate phases (Si2ON2, X1‐phase), silicon carbide, and (apart from β‐sialon) sialons based on AlN polytypes. The phase composition of the final product is determined not only by the charge composition but also by the set of production parameters. Results of the work may provide a basis for commercial preparation of sialon powder. 相似文献
218.
The redistribution of components in the crystal layer-melt system at the main stages of fractional crystallization on cooled walls is studied. Mathematical solutions that can be used for calculating the fraction of trapped melt and the value of effective distribution (partition) coefficient in the crystallization of systems of different types are obtained. The kinetics of diffusion of impurities and migration of liquid inclusions under the action of temperature gradients at the growth and diffusion-washing stages of a two-phase crystal layer is studied. Simple relations for calculating the holdup of a melt and the maximal degree to which the main component can be purified in the partial melting (sweating) of crystal layers are derived. The theoretical results are compared with the experimental data obtained in the fractional crystallization of organic mixtures and freezing of aqueous solutions. Comparative analysis of the efficiency of the studied stages of fractional crystallization is accomplished and some practical recommendations are formulated. 相似文献
219.
Yu. F. Patrakov E. S. Pavlusha N. I. Fedorova Yu. A. Strizhakova 《Solid Fuel Chemistry》2008,42(1):10-13
The results of the thermal solution of oil shale in benzene in a flow unit under supercritical conditions are reported. It was found that the conversion of shale organic matter into liquid products increased by a factor of 2.5 with an increase in the solvent pressure from 5 to 15 MPa. 相似文献
220.
M. Guerioune Y. Amiour W. Bounour O. Guellati A. Benaldjia A. Amara N. E. Chakri M. Ali-Rachedi D. Vrel 《International Journal of Self-Propagating High-Temperature Synthesis》2008,17(1):41-48
Aiming at preparation of shape memory alloys (SMAs), we explored the SHS of Cu1 − x
Zn1 − y
Al1 − z
alloys (0.29 < x < 0.30, 0.74 < y < 0.75, and 0.83 < z < 0.96). The most pronounced shape memory effect was exhibited by the alloys of the following compositions (wt %): (1) Cu(70.6)Zn(25.4)Al(4.0),
(2) Cu(70.1)Zn(25.9)Al(4.0), and (3) Cu(69.9)Zn(26.1)Al(4.0). The effect of process parameters on the synthesis of CuZnAl
alloys was studied by XRD, optical microscopy, and scanning electron microscopy (SEM). The grain size of CuZnAl was found
to depend on the relative amount of the primary CuZn and AlZn phases. Changes in the transformation temperature and heat of
transformation are discussed in terms of ignition intensity and compaction. Mechanism of the process depends on the level
of the temperature attained relative to the melting point of components. At the melting point of AlZn, the process is controlled
by the solid-state diffusion of AlZn into a product layer. The ignition temperature for this system depends on the temperature
of the austenite-martensite transformation in CuZnAl alloys. The composition and structure of the products was found to markedly
depend on process parameters. The SHS technique has been successfully used to prepare a variety of SMAs.
相似文献