A novel fabrication route to make macroporous silicon carbide (SiC) has been proposed in this study. The route is composed of the following two steps: the fabrication of porous α‐SiC/novolac‐type phenolic composite using hexamethylenetetramine (HMT) as a curing/blowing agent for the novolac monomer and a conventional reaction‐bonded (RB) sintering of the composite. The α‐SiC/novolac‐type phenolic composite was carbonized at 800°C for 2 h in N2 gas and then reacted with the molten silicon at 1450°C for 30 min under vacuum, resulting in the macroporous RB‐SiC with an open porosity of 48% and relatively large pore size of ~110 μm. The compressive strength of the macroporous RB‐SiC was 113 MPa, which is relatively high compared to those reported for macroporous SiC of equivalent porosities and pore sizes. 相似文献
The tetragonality and carbon distribution in tempered Fe-0.6C-1Mn martensite were investigated by X-ray diffraction and atom probe tomography to elucidate strain relaxation in the tetragonal lattice during tempering and its relationship with the solubility of excess carbon in martensite. Even though tetragonality (c/a) decreased with an increase in the tempering temperature, it persisted at low levels up to 400 °C. Si addition suppressed the decrease in tetragonality at 400 °C by inhibiting recovery in the dislocated matrix. Such persistence implies that dislocation migration is crucial for the complete release of tetragonal lattice strain at such a temperature, in addition to the decrease in the amount of solute carbon in martensite. A low level of tetragonality was observed for martensite containing carbon in the solid solution below the critical value of ~ 0.2 mass pct, at which a bcc structure was predicted. The amount of solute carbon after tempering was linearly correlated with tetragonality in the solute carbon content range of 0.07 to 0.6 mass pct, and the correlation coefficient was similar to those for as-quenched auto-tempered martensite and bainitic ferrite; these results indicate that the amount of excess carbon is simply determined by the amount of tetragonal lattice distortions remaining after carbide precipitation and recovery.
SiC ceramics were reaction joined in the temperature range of 1450–1800 °C using TiB2-based composites starting from four types of joining materials, namely Ti–BN, Ti–B4C, Ti–BN–Al and Ti–B4C–Si. XRD analysis and microstructure examination were carried out on SiC joints. It is found that the former two joining materials do not yield good bond for SiC ceramics at temperatures up to 1600 °C. However, Ti–BN–Al system results in the connection of SiC substrates at 1450 °C by the formation of TiB2–AlN composite. Furthermore, nearly dense SiC joints with crack-free interface have been produced from Ti–BN–Al and Ti–B4C–Si systems at 1800 °C, i.e. joints TBNA80 and TBCS80, whose average bending strengths are measured to be 65 MPa and 142 MPa, respectively. The joining mechanisms involved are also discussed. 相似文献
The effect of chloride on chalcopyrite leaching has been investigated by performing batch leaching tests with three kinds of leaching solutions and using Hiroyoshi’s model, which suggests that a zone of rapid leaching exists between the critical potential (Ec, equilibrium redox potential for the reduction of CuFeS2 to Cu2S) and the oxidation potential (Eox, equilibrium redox potential for the oxidation of Cu2S). The results of the leaching tests show that the leaching rate in hydrochloric acid solution is the fastest and that the relationship between the Cu leaching rate and oxidation–reduction potential (ORP) follows Hiroyoshi’s model. Thermodynamic calculations indicate that, with an increase in the chloride concentration, the concentration of cuprous ions increases as the chlorocuprate(I) complex ions are formed and the contribution of cuprous ions to the critical potential is greater than that of cupric ions, even though the concentration of cuprous ions is lower than that of cupric ions. This fact suggests that the formation of chlorocuprate(I) ions in a chloride solution may improve the chalcopyrite leaching rate by increasing the critical potential. 相似文献