Drift hole mobility in strained and unstrained doped Si1-xGex alloys

Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30% and doping levels of 10¹⁵-10¹⁹ cm^-3. The mobilities are calculated taking into account acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2×10¹⁹ cm^-3. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon     

Principles of lymphogenic and hematogenous metastasis and metastasis classification

A subpopulation of rabbit polyclonal anti-idiotypic antibody (anti-Id) was previously produced to a murine monoclonal antibody (mAb) (M1875) specific for the bluetongue virus core protein VP7. In this report, mimicry of VP7 by this anti-Id (designated RAb2-A) was functionally analyzed through immunization of Balb/c mice with RAb2-A or purified VP7. Animals immunized with RAb2-A were able to produce an M1875-like Ab3 antibody response with idiotype and epitope specificity resembling that of M1875 without subsequent exposure to the nominal antigen. This conclusion was supported by experiments showing that the RAb2-A-induced Ab3 antibodies (i) reacted specifically with the immunizing anti-Id; (ii) were capable of binding VP7; (iii) inhibited M1875 from binding to VP7; and (iv) inhibited M1875 from binding to RAb2-A. Similarly, mice immunized with purified VP7 also produced antibodies that exhibited characteristics such as idiotype and epitope specificity in common with M1875. No antibody response to VP7 was detected in control groups of mice immunized with either normal rabbit IgG or BHK-21 cell components. Therefore, it can be concluded that rabbit anti-Id RAb-2-A mimics an M1875-defined VP7 epitope sufficiently to function as a surrogate antigen for inducing an anti-bluetongue virus response.     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

Position-sensitive superheated-liquid-droplet neutron dosimeter

The one-dimensional (1D) position-sensitive superheated-liquid-droplet dosimeter (SLDD) has been fabricated and tested in the laboratory. The 1D SLDD is fabricated from a 9.525-mm OD, 6.35-mm ID, 20-cm long, Plexiglas-walled tube filled with a mixture of superheated-liquid Freon droplets and host medium glycerol. Washer-shaped piezoelectric acoustic transducers are positioned at both ends of the tube; they determine the number and positions of the acoustic events when the superheated-liquid droplets evaporate upon neutron irradiation. The SLDD is irradiated with the ¹³⁷Cs and ⁶⁰Co γ-sources, as well as ²⁵²Cf neutron source to test for its radiation response and spatial resolution. The SLDD based on the Freon-134a superheated-liquid droplets operating at 20°C and 1 atm is found to be ideal for measuring absorbed neutron dose. This study also proves that the positions of the radiation-induced nucleation acoustic events can be linearly determined from the differences in the transmission times received by the acoustic transducers on the 1D SLDD. The spatial resolution of the neutron depth-dose is 1 mm due the finite response time (1 μs) of the piezoelectric acoustic transducers.     

Perspectives on Design and Innovation

A series of studies of top European and other firms has revealed patterns of design management associated with commercial success. Firms that invest resources and professional expertise in product and industrial design in traditional and new industries have been commercially more successful than firms that pay less attention to these aspects of design. As an industry matures there is a shift in emphasis from design associated with technological innovation, to designs supporting technical improvements, and then to supporting user needs, fashion and product variants. These issues are illustrated through the history of the evolution of the bicycle.     

20-nm optical wavelength conversion using nondegenerate four-wavemixing

Wavelength conversion of optical signals over 20 nm is demonstrated using highly nondegenerate four-wave mixing in a semiconductor traveling-wave optical amplifier. This technique has the potential for extremely-high-speed operation and allows continuous tuning of both input and output wavelengths over the amplifier gain bandwidth. It is demonstrated that, even for such a large wavelength conversion range, it is possible to obtain conversion efficiencies in excess of -10 dB and high extinction ratios. The feasibility of the technique is demonstrated by system measurements at 622 Mb/s, showing a 1.1-dB power penalty at 10^-9 bit error rate (BER)     

Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity

An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 /spl mu/m. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 10/sup 10/ cm/spl middot/Hz/sup 1/2//W.     

50 years of the IEEE Microwave Theory and Techniques Society

The early history of the IEEE Microwave Theory and Techniques Society (IEEE MTT-S) is summarized since its founding in 1952, and all administrative committee members and presidents are listed. Some of the more recent changes resulting from growth and multinational participation are described. Publications are discussed with editors listed for this Transactions, the IEEE Microwave and Wireless Components Letters, the IEEE Microwave Newsletter, and IEEE Microwave Magazine. The chronological evolution of the IEEE MTT-S's awards is presented, including a listing of all award winners. Distinguished lecturers and microwave symposia sites and chairpersons are also discussed. Early technology trends are described