Dosimetric characteristic of VVR-M reactor with respect to tritium

Translated from Atomnaya Énergiya, Vol. 67, No. 2, pp. 111–113, August, 1989.     

测定钠中杂质的手动阻塞计的研究

文章介绍了测定钠中杂质浓度的手动阻塞计的原理、装置和实验结果。为了减少测量误差,我们研究了影响准确测定阻塞温度的因素,并且找到了减少测量误差的办法。在同样的杂质饱和温度下,该阻塞计测得的高、低阻塞温度所对应的杂质浓度差是很接近的。对氧其差值为1.03ppm;对氢为0.0763ppm。     

The effect of secondary scattering on the induced current in a longwire over an imperfect ground from an incident EMP

The effect of secondary scattering that is produced by the induced current in an infinitely long, finitely conducting wire over a plane, finitely conducting earth from an incident electromagnetic pulse is investigated. This is accomplished by finding the field of a Hertzian dipole over the earth and identifying the part that is due to secondary scattering. Frequency-domain results for the overall induced current require that certain infinite integrals be numerically evaluated. Fourier inversion to the time domain in turn requires the numerical evaluation of another infinite integral. When the results are compared to those obtained when secondary scattering is ignored, it is found that secondary scattering slightly increases the current for the case of broadside incidence and reduces it for the case of grazing incidence by as much as two orders of magnitude. Peak currents are much smaller than previously thought. These general results hold for all of the earth parameters that were used in the study     

Magnetic anisotropy of Co-Cr thin films as a function of substrate temperature during deposition

A sequence of Co78Cr22films, 500 nm in thickness, was prepared by deposition on glass in a modified Varian D.C. magnetron S-gun sputtering system. The substrate temperature during deposition, Ts, was fixed at various values with an upper limit of 300°C. Specimens were examined by VSM, TM, FMR and TEM. Msrises significantly with increasing Ts, peaking at 200°C at 370 emu/cm³. The effective volume-averaged anisotropy drops for Ts>110°C from +1.6 KOe to progressively negative values (-4.3 KOe at 300°C). From FMR we find indications of the presence, in addition to the transition and bulk layers, of a highly negative anisotropy constituent (sim-11.5KOe anisotropy field). This resonance appears at Tsvalues of 150°C and above. TEM plane and cross-section views taken on a Ts= 150°C specimen show islands composed of tilted columns within the bulk. For vertical recording, specimens prepared at Tsvalues between 50 and 100°C are recommended. On the other hand, for longitudinal recording applications, films prepared at Tsvalues above 250°C would seem to be appropriate.     

Power-dependent dispersion in far-off-resonant raman scattering

We investigate the saturation effects of power broadening, Stark shifting, and population transfer on Stokes conversion in stimulated Raman scattering. We do not make the usual rotating wave approximation because the detuning from the next electronic state is assumed to be in the optical regime. Retaining the counter-rotating terms allows an exact determination of the pump and Stokes indexes of refraction. Steady-state solutions for the Stokes intensity and phase are obtained and the effects of making the rotating wave approximation (RWA) are discussed. Finally, we examine the behavior of these solutions for Stokes conversion in hydrogen gas when geometric propagation is appropriate.     

Computing hysteresis points of nonlinear equations depending on two parameters

A direct method is described for computing a hysteresis point (double turning point) corresponding to a cusp point of a system ofn nonlinear equations inn variables depending on two parameters. By addition of two equations a minimally extended system ofn+2 nonlinear equations is constructed for which the hysteresis point is an isolated solution. An efficient implementation of Newton's method is presented not requiring evaluations of second derivatives of the original problem. Two numerical examples show the efficiency of theQ-quadratically convergent method.     

Special features of the periodic-pulse-train laser radiation confinement in doped gallium arsenide and zinc selenide

Experimental data on the pulsed laser radiation confinement in compensated GaAs and ZnSe with deep impurity levels are reported for the laser wavelength λ=1.55 μm and a pulse repetition frequency of up to 100 kHz. It is demonstrated that an increase in the pulse repetition rate is accompanied by a decrease in the energy confinement threshold and by an increase in the radiation attenuation coefficient. These effects are explained by the accumulation of nonequilibrium charge carriers related to a dependence of the recombination time constant on the concentration of free impurity centers.