A spherical aberration-corrected 200 kV TEM

A spherical aberration (Cs)-corrected 200 kV TEM was newly developed. The column of the microscope was extended by 25 cm and the inner yoke of the objective lens was modified to insert some parts of the corrector elements. The corrector has two hexapole elements that play a main role in Cs correction and they are placed at a position equivalent to the coma-free point of the objective lens by using two transfer doublet lenses. The Cs correction was successfully carried out by means of the third-order aberration that was generated in the two extended hexapoles. The Cs can be corrected to the desired value and also can be overcompensated in order to produce a negative Cs, as with the corrected Cs of -23 microm shown in this work. The optical system of the corrector does not produce second- and fourth-order aberrations, and can correct residual aberrations up to the third order. All of the corrector elements are computer-controlled and the third-order aberrations are quite stable after they are properly corrected. The resolution of 0.135 nm was experimentally confirmed by the Young's fringe method. Image simulations of a silicon [110] single crystal were made with various Cs and defocus values to demonstrate the effectiveness of arbitral control of Cs.     

Discerning nonstationarity from nonlinearity in seizure-free and preseizure EEG recordings from epilepsy patients

A number of recent studies indicate that nonlinear electroencephalogram (EEG) analyses allow to define a state predictive of an impending epileptic seizure. In this paper, we combine a method for detecting nonlinear determinism with a novel test for stationarity to characterize EEG recordings from both the seizure-free interval and the preseizure phase. We discuss differences between these periods, particularly an increased occurrence of stationary, nonlinear segments prior to seizures. These differences seem most prominent for recording sites within the seizure-generating area and for EEG segments less than one minute's length.     

Growth of InGaN HBTs by MOCVD

The design and growth of GaN/InGaN heterojunction bipolar transistors (HBTs) by metalorganic chemical vapor deposition (MOCVD) are studied. Atomic-force microscopy (AFM) images of p⁺InGaN base layers (∼100 nm) deposited under various growth conditions indicate that the optimal growth temperature is limited to the range between 810 and 830°C due to a trade-off between surface roughness and indium incorporation. At these temperatures, the growth pressure must be kept above 300 Torr in order to keep surface pit density under control. An InGaN graded-composition emitter is adopted in order to reduce the number of V-shaped defects, which appear at the interface between GaN emitter and InGaN base and render an abrupt emitter-base heterojunction nearly impossible. However, the device performance is severely limited by the high p-type base contact resistance due to surface etching damage, which resulted from the emitter mesa etch.     

Intel成功制作45nm芯片

Intel采用45nm工艺技术制作了该行业第一块全功能SRAM芯片,目标是于2007年采用该技术在300mm晶圆上开始制造芯片。目前Intel在Arizona和Oregon有两个制造厂制造65nm芯片,今年在Ireland和Oregon将有两个以上新厂投入生产。     

Low‐Threshold Distributed‐Feedback Lasers Based on Pyrene‐Cored Starburst Molecules with 1,3,6,8‐Attached Oligo(9,9‐Dialkylfluorene) Arms

Here, a detailed characterization of the optical gain properties of sky‐blue‐light‐emitting pyrene‐cored 9,9‐dialkylfluorene starbursts is reported; it is shown that these materials possess encouragingly low laser thresholds and relatively high thermal and environmental stability. The materials exhibit high solid‐state photoluminescence (PL) quantum efficiencies (>90%) and near‐single‐exponential PL decay transients with excited state lifetimes of ～1.4 ns. The thin‐film slab waveguide amplified spontaneous emission (ASE)‐measured net gain reaches 75–78 cm^?1. The ASE threshold energy is found to remain unaffected by heating at temperatures up to 130 °C, 40 to 50 °C above T_g. The ASE remained observable for annealing temperatures up to 170 or 200 °C. 1D distributed feedback lasers with 75% fill factor and 320 nm period show optical pumping thresholds down to 38–65 Wcm^?2, laser slope efficiencies up to 3.9%, and wavelength tuning ranges of ～40 nm around 471–512 nm. In addition, these lasers have relatively long operational lifetimes, with N_1/2 ≥ 1.1 × 10⁵ pulses for unencapsulated devices operated at ten times threshold in air.     

Monomolecular and Bimolecular Recombination of Electron–Hole Pairs at the Interface of a Bilayer Organic Solar Cell

While it has been argued that field‐dependent geminate pair recombination (GR) is important, this process is often disregarded when analyzing the recombination kinetics in bulk heterojunction organic solar cells (OSCs). To differentiate between the contributions of GR and nongeminate recombination (NGR) the authors study bilayer OSCs using either a PCDTBT‐type polymer layer with a thickness from 14 to 66 nm or a 60 nm thick p‐DTS(FBTTh₂)₂ layer as donor material and C₆₀ as acceptor. The authors measure JV‐characteristics as a function of intensity and charge‐extraction‐by‐linearly‐increasing‐voltage‐type hole mobilities. The experiments have been complemented by Monte Carlo simulations. The authors find that fill factor (FF) decreases with increasing donor layer thickness (L_p) even at the lowest light intensities where geminate recombination dominates. The authors interpret this in terms of thickness dependent back diffusion of holes toward their siblings at the donor–acceptor interface that are already beyond the Langevin capture sphere rather than to charge accumulation at the donor–acceptor interface. This effect is absent in the p‐DTS(FBTTh₂)₂ diode in which the hole mobility is by two orders of magnitude higher. At higher light intensities, NGR occurs as evidenced by the evolution of s‐shape of the JV‐curves and the concomitant additional decrease of the FF with increasing layer thickness.     

Elastomeric Fibrous Hybrid Scaffold Supports In Vitro and In Vivo Tissue Formation

Biomimetic materials with biomechanical properties resembling those of native tissues while providing an environment for cell growth and tissue formation, are vital for tissue engineering (TE). Mechanical anisotropy is an important property of native cardiovascular tissues and directly influences tissue function. This study reports fabrication of anisotropic cell‐seeded constructs while retaining control over the construct's architecture and distribution of cells. Newly synthesized poly‐4‐hydroxybutyrate (P4HB) is fabricated with a dry spinning technique to create anelastomeric fibrous scaffold that allows control of fiber diameter, porosity, and rate ofdegradation. To allow cell and tissue ingrowth, hybrid scaffolds with mesenchymalstem cells (MSCs) encapsulated in a photocrosslinkable hydrogel were developed. Culturing the cellularized scaffolds in a cyclic stretch/flexure bioreactor resulted in tissue formation and confirmed the scaffold's performance under mechanical stimulation. In vivo experiments showed that the hybrid scaffold is capable of withstanding physiological pressures when implanted as a patch in the pulmonary artery. Aligned tissue formation occurred on the scaffold luminal surface without macroscopic thrombus formation. This combination of a novel, anisotropic fibrous scaffold and a tunable native‐like hydrogel for cellular encapsulation promoted formation of 3D tissue and provides a biologically functional composite scaffold for soft‐tissue engineering applications.     

把创新进行到底--专访江阴新潮集团创始人、江苏长电科技董事长王新潮

问:我们了解到,长电在十多年前还是一个资不抵债、名不见经传的小企业,如今的长电不但成功上市,还在集成电路和半导体分立器件器件装业树立了一个行业领先者的形象,而且其各项技术经济指标在国内同类企业中名列前茅,对此,请问您如何评价您所创业的这个企业和团队.     

Thermoelectric Properties of Two-Phase PbTe with Indium Inclusions

The thermoelectric figure of merit (zT) can be increased by introduction of additional interfaces in the bulk to reduce the thermal conductivity. In this work, PbTe with a dispersed indium (In) phase was synthesized by a matrix encapsulation technique for different In concentrations. x-Ray diffraction analysis showed single-phase PbTe with In secondary phase. Rietveld analysis did not show In substitution at either the Pb or Te site, and this was further confirmed by room-temperature Raman data. Low-magnification (~1500×) scanning electron microscopy images showed micrometer-sized In dispersed throughout the PbTe matrix, while at high magnification (150,000×) an agglomeration of PbTe particles in the hot-pressed samples could be seen. The electrical resistivity (ρ) and Seebeck coefficient (S) were measured from 300 K to 723 K. Negative Seebeck values showed all the samples to be n-type. A systematic increase in resistivity and higher Seebeck coefficient values with increasing In content indicated the role of PbTe-In interfaces in the scattering of electrons. This was further confirmed by the thermal conductivity (κ), measured from 423 K to 723 K, where a greater reduction in the electronic as compared with the lattice contribution was found for In-added samples. It was found that, despite the high lattice mismatch at the PbTe-In interface, phonons were not scattered as effectively as electrons. The highest zT obtained was 0.78 at 723 K for the sample with the lowest In content.     

High-Resolution and Stable Ruddlesden–Popper Quasi-2D Perovskite Flexible Photodetectors Arrays for Potential Applications as Optical Image Sensor

The development of an efficient fabrication route to achieve high-resolution perovskite pixel array is key for large-scale flexible image sensor devices. Herein, a high-resolution and stable 10 × 10 flexible PDs array based on formamidinium(FA⁺) and phenylmethylammonium (PMA⁺) quasi-2D (PMA)₂FAPb₂I₇ (n = 2) perovskite is demonstrated by developing SiO₂-assisted hydrophobic and hydrophilic treatment process on polyethylene terephthalate substrate. By introducing Au nanoparticles (Au NPs),  the perovskite film quality is improved and grain boundaries are reduced. The mechanism by which Au NPs upgrade the photoelectric quality of perovskite is mainly revealed by glow discharge-optical emission spectroscopy (GD-OES) and grazing-incidence wide-angle X-ray scattering (GIWAXS). To further improve the photoelectric performance of the devices, a post-treatment strategy with formamidinium chloride (FACl) is used . The optimized flexible PDs arrays show excellent optoelectronic properties with a high responsivity of 4.7 A W⁻¹, a detectivity of 6.3 × 10¹² Jones, and a broad spectral sensitivity. The device also exhibits excellent electrical stability even under severe bending and excellent flexural strength, as well as excellent environmental stability. Finally, the integrated flexible PDs arrays are used as sensor pixels in an imaging system to obtain high-resolution imaging patterns, demonstrating the imaging capability of the PDs arrays.