Evaluation of intraductal ultrasonography in the diagnosis of pancreatic cancer

An intraductal ultrasound (IDUS) probe which is inserted via the papilla into the main pancreatic duct (MPD) was evaluated in the diagnosis of 20 patients with pancreatic cancer. The examination was successfully performed with the probe in 17 of the patients (85%). Due to its high frequency (30 MHz) the probe only allowed visualization of the ductal wall and the immediate periductal vicinity (up to about 10 mm). In 15 of the 20 patients the tumors were surgically resected and IDUS scanning was also performed in vitro on the resection specimens, the results being compared to those of histopathological examination. Of these 15 patients, 13 were found to have ductal adenocarcinomas and all but one had been unequivocally diagnosed as having such by ultrasonography (US), computed tomography (CT), endoscopic retrograde cholangiopancreatography (ERCP) and endoscopic ultrasonography (EUS). IDUS showed an echorich area (corresponding to cancerous canaliculi on histopathological examination), surrounded by an echopoor area (abundant stroma). This pattern was classified as type I. In two patients with intraductal papillary carcinomas in whom a conclusive diagnosis was not established on US, CT, EUS or ERCP, IDUS showed tumorous tissue with an inhomogeneous echopattern outside (type II) or within (type III) the duct. These results show that IDUS offers valuable diagnostic information complementary to ERCP especially in cases of intraductal papillary tumors. Whether the high resolution imaging of the duct and the paraductal tissue can be used to differentiate between the different forms of pancreatic lesions (inflammation, neoplasms) has to be investigated further.     

Fanconi anemia complementation group E: clinical and cytogenetic data of the first patient

The clinical and cytogenetic data of the first patient proven to belong to the fifth Fanconi anemia complementation group are described. The Turkish boy presented with psychomotoric retardation, growth retardation, retarded bone age, brachycephaly, hypotelorism, epicanthus, syndactyly, brachydactyly, renal dystopia, and cryptorchism. In addition, an asymmetrical skeletal anomaly was seen with a double distal phalanx of the left thumb and hypoplasia of the right thumb. Typical hematological features of the disorder developed, at the age of 2.5 years, about 1 year after diagnosis. Cytogenetic studies confirmed the clinical diagnosis and revealed a spontaneous chromosomal instability and hypersensitivity to the cross-linking agents diepoxybutane and Trenimon. The findings in the patient, who is considered to be the standard for the fifth Fanconi anemia complementation group, are compared with data reported for other patients affected with Fanconi anemia.     

A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanchephotodiode with a flip-chip structure for wavelengths of 1.3 and 1.55μm

The authors reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs superlattice multiplication region which are transparent for wavelengths of 1.55 and 1.3 μm. The light reflection by the electrode enables the absorption layer to be as thin as 0.8 μm without significantly reducing the quantum efficiency. A maximum bandwidth of 17 GHz was obtained at a low multiplication factor because the transit time through the absorption layer is reduced     

Parameter evaluation in automated digital deep-level transientspectroscopy (DLTS)

A method of directly evaluating the activation energy ΔE, capture cross section σ, and density N_T, of deep-level traps from the pulsed reverse bias capacitance transient is described. The main advantages of this technique are that it requires only a single temperature scan, and it can resolve nonexponential transients due to closely-spaced energy levels. The test samples used for this paper consisted of Schottky diodes fabricated on nonirradiated and 1-MeV electron-irradiated n-type VPE (vapor-phase epitaxy) GaAs wafers. The well known EL2 trap was identified with ΔE of 0.81 eV, and σ _n of 1.0×10^-13 cm² for the nonirradiated sample. These values were found to be in good agreement with published data using established, conventional DLTS techniques. For the irradiated samples a nonexponential capacitance transient was found in the EL2 range of temperatures. The discussed technique was able to resolve two closely spaced deep levels lying at E_c-0.81 eV and E_c-0.84 eV, and with capture cross sections of 1.5×10^-13 cm² and 2.5×10^-12 cm², respectively     

Asymptotically maximin observation of traces of chemical elements from analytical signals of inductively coupled plasma atomic emission spectrometry

We have obtained a quasioptimal (with respect to the maximin criterion), background-invariant rule for observation of analytical signals from traces of chemical elements using atomic emission spectrometry data. We introduce a dimensionless analytical parameter, and use its dependence on the concentration of the chemical element in the analyte object for determination of lanthanum in aqueous solutions on an inductively coupled plasma atomic emission spectrometer. We present estimates of the accuracy of the determination. Translated from Izmeritel’naya Tekhnika, No. 8, pp. 63–65, August, 1996.     

Correlations between the electronic state and mechanical properties of some transition metal compounds/alloys

It is observed that changes in the mechanical state of solids can alter their electronic state and vice versa. The d-state electrons in transition metal compounds/alloys are found to influence mechanical properties in a range of materials that include intermetallic compounds, hard metals, cryogenic alloys, etc. We have attempted to represent these effects graphically as a field map based on axes of the number of d-state electrons in the compounds. Specifically identifiable properties are found in different regions in this property field map.     

Reprocessing of Microcrystalline Cellulose Spheres with Low Drug Concentrations

Spherical dosage forms have been reported to be an efficient and effective method for delivering drugs into the body and controlling their dissolution rate. Substantial work has been conducted in these laboratories illustrating the advantages of microcrystalline cellulose-based spheres for these purposes. Through various methodologies, but most routinely the extrusion and marumerization technique, it has been determined by Funck, et al. that not more than 50% drug can be incorporated into a sphere formulation without the addition of other binders.

Because of the nature of the extrusion and marumerization manufacturing process, the type of drug being processed and the resultant particle size requirements of the spheres, the percent of spheres falling outside the desired particle size can range from between 3% and 20%. For this reason and the possibility of operator errors, our objective was to determine the parameters which needed monitoring when reprocessing was necessary.     

Optoelectronic integrated systems based on free-space interconnectswith an arbitrary degree of space variance

It is appealing to contemplate how VLSI or wafer-scale integrated systems incorporating free-space optical interconnection might outperform purely electrically interconnected systems. This paper first provides a uniform treatment of a general class of optical interconnects based on a Fourier-plane imaging system with an array of sources in the object plane and an array of receptors in the image plane. Sources correspond to data outputs of processing “cells,” and receptors to their data inputs. A general abstract optical imaging model, capable of representing a large class of real systems, is analyzed to yield constructive upper bounds on system volume that are comparable to those arising from “3-D VLSI” computational models. These bounds, coupled with technologically derived constraints, form the heart of a design methodology for optoelectronic systems that uses electronic and optical elements each to their greatest advantage, and exploits the available spatial volume and power in the most efficient way. Many of these concepts are embodied in a demonstration project that seeks to implement a bit-serial, multiprocessing system with a radix-2 butterfly topology, and incorporates various new technology developments