A statistical model for estimating the trend of electrical quantities in power systems

A statistical approach to estimate the trend, over a long time interval, of electrical parameters is proposed in this paper. The trend is determined by processing a limited number of parameter values measured at instants randomly chosen. Experimental results are reported, which show the good performance of the method proposed when it is applied to estimate customers' loads profiles and the trend of some parameters providing information on power quality.     

The stress-whitened damage zone of PVC blends

The stress-whitened damage zone that formed ahead of a semicircular notch during slow tensile loading has been measured from optical micrographs of translucent blends of poly(vinyl chloride) (PVC) with experimental chlorinated polyethylene (CPE) resins. When the zone was small, the plane strain condition applied and from the elastic stress distribution a constant mean stress condition was found at the boundary of the crescent-shaped zone. The critical mean stress did not depend on the chlorine content or the chlorine distribution of the experimental CPE resin used in the blend. While the critical mean stress decreased as the amount of CPE in the blend was increased, the critical volume strain, calculated from the bulk modulus, was independent of composition and was thought to be the controlling parameter for stress-whitening. When the zone was larger, the shape was qualitatively described by concepts of stress redistribution in the presence of a plastic zone ahead of the notch. Macroscopic flow and necking were only detected near the maximum in the stress-displacement curve.     

Corrosion behaviour of copper-reinforced carbon electrodes in dilute hydrochloric acid solutions

The corrosion behaviour of experimentally prepared copper-reinforced carbon electrodes in dilute hydrochloric acid is investigated. The electrodes are not only directly attacked by the acid, but they are also subjected to galvanic corrosion. The baking temperature and time are the most crucial processing variables. A minimum in the corrosion rate is always achieved when the electrodes are baked at 400 °C for 1.5 h, the level depending on the copper content. The corrosion resistance increases progressively with the baking temperature as long as the baking time is less than 1.5 h. Baking for more than 1.5 h results in increasing corrosion rate. The presence of copper increases the corrosion resistance of the prepared electrodes.     

Monolithic integration of a 5.3 GHz regenerative frequency divider using a standard bipolar technology

A monolithic microwave frequency divider IC with an operating range of 1.4?5.3 GHz was developed and fabricated in a standard bipolar technology. The circuit operates on the principle of `regenerative frequency division?. Compared to the most popular divider concepts based on a master-slave D-flip-flop, an almost twice as high input frequency can be divided, provided that the same technology is used. A further advantage is the low power consumption.     

The influence of annealing on the conductivity of magnesium films

Polycrystalline magnesium films were deposited under ultrahigh vacuum by thermal evaporation onto a cooled silica substrate. During the growth process of a film a number of lattice defects are incorporated. It was found that the defect density decreases with increasing thickness. An annealing study of the electrical resistance and defect density in magnesium films was made. The results were interpreted on the basis of Vand's theory. The function F₀ expressing the law of distribution of the decay energies exhibited a maximum. For thick films there was no appreciable variation in the activation energy with thickness. In this case the evaluated activation energy E was found to be about 0.35 eV. For very thin films this energy decreases with increasing thickness.     

A 72-mW CMOS 802.11a direct conversion front-end with 3.5-dB NF and 200-kHz 1/f noise corner

A direct conversion 802.11a receiver front-end including a synthesizer with quadrature VCO has been integrated in a 0.13-/spl mu/m CMOS process. The chip has an active area of 1.8 mm/sup 2/ with the entire RF portion operated from 1.2 V and the low frequency portion operated from 2.5 V. Its key features are a current driven passive mixer with a low impedance load that achieves a low 1/f noise corner and an high I-Q accuracy quadrature VCO. Measured noise figure is 3.5 dB with an 1/f noise corner of 200 kHz, and an IIP3 of -2 dBm. The synthesizer DSB phase noise integrated over a 10 MHz band is less than -36 dBc while its I-Q phase unbalance is below 1 degree.     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.