Modeling pentode-like characteristics of recessed-gate staticinduction transistor

A new analytical model is described for the pentode-like region of the characteristics of recessed-gate SIT structures. The model allows one to investigate the transition from saturating characteristics of long channel JFET's to nonsaturating behavior of SIT devices, taking into account realistic device geometry     

Overgrown silicon PBT's: calculations and measurements

The device parameters of overgrown silicon permeable base transistors (PBT's) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some design rules arise for optimizing the high frequency performance of PBT's. The calculations indicate the source-drain distance as the essential PBT parameter, which should be kept below 200 nm in order to expect unity-current-gain frequencies f_T over 50 GHZ. In addition, PBT's with buried monocrystalline CoSi₂-gates have been fabricated by high dose cobalt ion implantation through a grid-like mask into MOS-compatible n-type Si(100). Measurements revealed a transconductance of 70 mS/mm and a f _T value of 6 GHz. The comparison between measured and simulated output characteristics shows good agreement     

Drain structure optimization for highly reliable deep submicrometern-channel MOSFET

A guideline for n^- fully gate overlapped (FOLD) structure design optimization has been studied. From the viewpoint of reliability, the greatest reduction in substrate current directly leads to the most reliable n^- design for the FOLD structure. The current path modulation phenomenon due to the trapped charge at the n ^- extension region dominates the hot-carrier induced characteristics change for conventional lightly doped drain (LDD) structure with side-wall spacer. This phenomenon is minimized in the FOLD structure due to its higher controllability of the gate electrode than the LDD structure at the n^- extension region. Furthermore, it was also confirmed that the 0.3 μm optimized FOLD structure can achieve high circuit performance at 3.3 V operation, maintaining hot-carrier resistance     

On the posterior-probability estimate of the error rate ofnonparametric classification rules

The posterior-probability estimate of the classification error rate of some nonparametric classification rules is studied. The variance of the estimator is shown to have same remarkable distribution-free properties for the k-nearest neighbor, kernel, and histogram rules. We also investigate the bias of the estimate and establish its consistency and upper bounds. The version of the estimate calculated from an independent set of unclassified patterns is also considered     

Dielectric measurements using a rational function model

A recently proposed rational function model for the aperture admittance of 50 ohm Teflon filled coaxial lines in contact with a homogeneous dielectric is experimentally validated. A calibration technique of the automatic network analyzer utilizing standard terminations and time domain gating is used. Uncertainties in the dielectric properties of reference liquids do not enter the calibration procedure. Experimental results for water and methanol are compared with estimated values. A model expression for the sensitivity of the probe is validated. The sensitivities of two coaxial line probes for the measurements made are determined. Results obtained using the new model are compared with those of other workers     

Understanding the role of self-esteem in managing communicationquality

This paper presents an overview of the ways in which self-esteem operates in employee communication. As they develop effective communication skills, managers need to consider the consequence of stress on employee self-esteem and performance. Persons with high self-esteem are less likely to experience workplace demands as stressful and are better able to respond effectively to those demands. This paper discusses the relationship among self-esteem, occupational stress, and communication quality, then recommends ways in which self-esteem can be enhanced through employee communication     

The special section on professional communication in Russia: anAmerican perspective

Enormous changes that have taken place in the last few years in Russia have revealed a need for Russian technical communicators to refocus their expertise and skills in order to enter the global marketplace successfully and competitively. Rather than dwell on the familiar differences between Americans and Russians, Cold War adversaries, a common ground exists and is growing. We share a mutual interest in the successful entry of Russian technical communicators in the global marketplace. We also share an understanding that technology is central to civilization as we know it, and that the masters of technology have a substantial influence on all activities that they touch; a belief that technology has had a major beneficial effect on the peoples of the world, but that with such power comes the potential for large, serious, and potentially devastating influences; the idea that the embrace of technology is a good cultural fit with cultures formed from revolutions, for technology in the later part of this century has come to be synonymous with rapid change, and cultures with revolutionary heritage welcome change; the notion that technological breakthroughs have profound influences on the nature of work, liberating the traditional intensive physical nature of labor to the emergence of a knowledge worker; and the belief that the global marketplace forces the need for clear and rapid communication across borders, as well as among cultures. If we can agree on these technical communications issues, then we have a firm foundation for building a gateway to communication in the global market