A Hybrid Clustering Approach Based Q-Leach in TDMA to Optimize QOS-Parameters

An Orthogonal frequency part multiplexing suffers from a considerable challenge due to a high peak to average power ratio (PAPR). Hence, an effective method such as partial transmits sequence (PTS) can avert this defiance by limit the design of PAPR. Therefore, an improving PAPR reduction performance via a novel approach is proposed by detaching each subblock into two parts furthermore exchanges the first sample with the final selection in each portion of the subblock to generate a new partitioning scheme. Several typical traditional segmentation schemes are used to analyze and apply the presented algorithm, such as adjacent, interleaving, and pseudo-random schemes. Besides, two scenarios are adopted based on simulation software in which the number of subcarriers is set to 128 and 256. Based on the results, a superior PAPR reduction performance is achieved based on the improved segmentation schemes regarding traditional strategies in both systems. Moreover, the enhanced adjusted PTS scheme poses a low computational complexity compared with that of the conventional schemes.

     

An energy efficient routing protocol for correlated data using CL-LEACH in WSN

Wireless Networks - Energy efficiency is an important parameter in the research area related to the design of routing protocols for Wireless Sensor Networks (WSNs). The consumption of energy during...     

Photolytic deposition of aluminum nitride and oxy-nitride films at temperatures ≤ 350k

Aluminum nitride and oxy-nitride thin films have been deposited on Si(100) substrates at temperatures of 300-350K by gas-phase excimer laser photolysis at 193 nm. The precursors used for this deposition process are trimethylamine alane and ammonia. The properties of these laser-deposited films were studied using scanning electron microscopy, energy dispersive x-ray analysis, and x-ray diffraction. X-ray photoelectron spectroscopy has been extensively used to provide information regarding the chemical compositions on the surface and in the bulk of these laser deposited films, as well as on the chemical states of the components of the films. Well-adhering, smooth, amorphous films of AlN are obtained at a substrate temperature of 350K using this technique.     

Die attach failures related to wafer back metal processing—an AES study

Die attach failures on Cr/Ni/Au back-metallised silicon wafers have been studied under different process conditions. The Auger studies on the failed devices show that the formation of nickel oxide causes poor die attachment even for an Au film thickness of ∼ 500 Å. The failures simulated experimentally revealed that nickel oxide formation depends on the film sintering conditions.     

iMobile EE – An Enterprise Mobile Service Platform

iMobile is an enterprise mobile service platform that allows resource-limited mobile devices to communicate with each other and to securely access corporate contents and services. The original iMobile architecture consists of devlets that provide protocol interfaces to different mobile devices and infolets that access and transcode information based on device profiles. iMobile Enterprise Edition (iMobile EE) is a redesign of the original iMobile architecture to address the security, scalability, and availability requirements of a large enterprise such as AT&T. iMobile EE incorporates gateways that interact with corporate authentication services, replicated iMobile servers with backend connections to corporate services, a reliable message queue that connects iMobile gateways and servers, and a comprehensive service profile database that governs operations of the mobile service platform. The iMobile EE architecture was also extended to provide personalized multimedia services, allowing mobile users to remotely control, record, and request video contents. iMobile EE aims to provide a scalable, secure, and modular software platform that makes enterprise services easily accessible to a growing list of mobile devices roaming among various wireless networks.     

Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1−xP graded buffer layers

Compositionally graded In_xGa_1−xP (x=0.48→x=1) metamorphic layers have been grown on GaAs substrate by solid source molecular beam epitaxy using a valved phosphorus cracker cell. Three series of samples were grown to optimize the growth temperature, V/III ratio and grading rate of the buffer layer. X-ray diffraction (XRD) and photoluminescence (PL) were used to characterize the samples. The following results have been obtained: (1) XRD measurement shows that all the samples are nearly fully strain relaxed and the strain relaxation ratio is about 96%; (2) the full-width at half-maximum (FWHM) of the XRD peak shows that the sample grown at 480°C offers better material quality; (3) the grading rate does not influence the FWHM of XRD and PL results; (4) adjustment of the V/III ratio from 10 to 20 improves the FWHM of XRD peak, and the linewidth of PL peak is close to the data obtained for the lattice-matched sample on InP substrate. The optimization of growth conditions will benefit the metamorphic HEMTs grown on GaAs using graded InGaP as buffer layers.     

Solution structure of the donor site of a trans-splicing RNA

The CYP51 gene encoding eburicol 14 alpha-demethylase (P450(14DM)) was cloned from a genomic library of the filamentous fungal plant pathogen Penicillium italicum, by heterologous hybridisation with the corresponding gene encoding lanosterol 14 alpha-demethylase from the yeast Candida tropicalis. The nucleotide sequence of a 1739-bp genomic fragment and the corresponding cDNA clone comprises an open reading frame (ORF) of 1545 bp, encoding a protein of 515 amino acids with a predicted molecular mass of 57.3 kDa. The ORF is interrupted by three introns of 60, 72 and 62 bp. The C-terminal part of the protein includes a characteristic haem-binding domain, HR2, common to all P450 genes. The deduced P. italicum P450(14DM) protein and the P450(14DM) proteins from Candida albicans, C. tropicalis and Saccharomyces cerevisiae share 47.2, 47.0 and 45.8% amino acid sequence identity. Therefore, the cloned gene is classified as a member of the CYP51 family. Multiple copies of a genomic DNA fragment of Pl italicum containing the cloned P450 gene were introduced into Aspergillus niger by transformation. Transformants were significantly less sensitive to fungicides which inhibit P450(14DM) activity, indicating that the cloned gene encodes a functional eburicol 14 alpha-demethylase.     

Temperature dependence of avalanche multiplication in InP-based HBTs with InGaAs/InP composite collector: device characterization and physics model

Recent efforts are being focused on improving the breakdown of InP-based heterojunction bipolar transistors (HBTs) towards high-power applications. A fundamental understanding of the temperature dependence of breakdown and its physics mechanism in these devices is important. In this work, a detailed characterization of temperature-dependent collector breakdown behavior in InP DHBTs (DHBTs) with an InGaAs/InP composite collector is carried out. A physics model for the prediction of temperature-dependent breakdown in lnP/InGaAs composite collector is developed. We found that, although the variation of impact ionization coefficient due to the change of temperature may affect the device breakdown, the temperature-dependence of breakdown in the lnGaAs/InP composite collector could be significantly affected by the carrier transport in the InGaAs region. As temperature is increased, the increase in the contribution of InGaAs layer to the junction breakdown due to the reduction of electron energy relaxation length could be the root cause of the reduction of junction breakdown voltage. Good agreement between the physics model and experimental data demonstrate the validities of the proposed physics model to predict the temperature dependent breakdown characteristics for InP DHBTs.     

An Intelligent Braille Display Device

The high cost of braille output devices has prevented their wide use among the visually handicapped. Here, a much cheaper device is implemented.