Natural colorant from the bark of Macaranga peltata: kinetic and adsorption studies on silk

The colour component from the bark of Macaranga peltata has been extracted and, using spectral techniques, the main colouring ingredient has been identified as ellagic acid. The dyeing properties of the extract on silk have been studied. The colour coordinates of the dyed samples were found to be in the yellow–red quadrant of the colour space diagram and the dyed samples exhibited acceptable fastness properties. The effect of temperature and dye concentration on the rate of dyeing has been studied. Adsorption studies revealed that the process fits well with the Langmuir isotherm model. The thermodynamic parameters of the dyeing process have been evaluated using an Arrhenius plot. The experimental results revealed that the adsorption was exothermic and spontaneous in nature, and exhibited first‐order kinetics. Further, the effect of electrolyte on rate of dyeing has also been recorded. The rate of adsorption increases as the disrupting effect of the added electrolyte cation increases and follows the order: Al³⁺ > Ca²⁺ > Na⁺.     

Study of deep level defect behavior in undoped n-InP (1 0 0) after rapid thermal annealing

The effects of rapid thermal annealing on deep level defects in the undoped n-type InP with Ru as Schottky contact metal have been characterized using deep level transient spectroscopy (DLTS). It is observed that the as-deposited sample exhibit two deep levels with activation energies of 0.66 and 0.89 eV. For the samples annealed at 300 °C and 400 °C, a deep level is identified with activation energies 0.89 and 0.70 eV, respectively below the conduction band. When the sample is annealed at 500 °C, three deep levels are observed with activation energies 0.25, 0.32 and 0.66 eV. Annealing of the sample at 300 °C, orders the lattice of as-grown material by suppressing the defect 0.66 eV (A1) which is found in the as-deposited sample. The trap concentration of the 0.89 eV deep levels is found to be increased with annealing temperature. The deep level 0.32 eV may be due to the lattice defect by thermal damage during rapid thermal annealing process such as vacancies, interstitials and its complexes, indicating the damage of the sample after annealing at 500 °C. The defects observed in all the samples are possibly due to the creation of phosphorous vacancy or phosphorous antisite.     

Electrical characterization of Au/n-GaN metal-semiconductor and Au/SiO2/n-GaN metal-insulator-semiconductor structures

In the present work, we have investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/SiO₂/n-GaN metal-insulator-semiconductor (MIS) Schottky diode and compared with Au/n-GaN metal-semiconductor (MS) Schottky diode. Calculations showed that the Schottky barrier height and ideality factor of the MS Schottky diode is 0.79 eV (I-V), 0.87 eV (C-V) and 1.45, respectively. It is observed that the Schottky barrier height increases to 0.86 eV (I-V), 0.99 eV (C-V) and ideality factor deceases to 1.3 for MIS diode. For the MS diode, the calculated doping concentration is 4.17 × 10¹⁷ cm⁻³. However, in the case of the MIS Schottky diode, the decrease in doping concentration is observed and the respective value is 2.08 × 10¹⁷ cm⁻³. The obtained carrier concentration of the MIS diode is reduced about 50% when compared to the MS diode. The interface state density as determined by Terman's method is found to be 3.79 × 10¹² and 3.41 × 10¹⁰ cm⁻² eV⁻¹ for the MS and MIS Schottky diodes, respectively. The calculated interface densities are 2.47 × 10¹¹ cm⁻² eV⁻¹, 3.35 × 10¹¹ cm⁻² eV⁻¹ and 3.5 × 10¹¹ cm⁻² eV⁻¹ for the sweep rates of 300, 450 and 600 mV/s from MOS C-V measurements for the MIS Schottky diode. The interface state density calculated from Terman's method is found to be increased with sweep rate. From the C-V measurement, it is noted that the decrease in the carrier concentration in MIS diodes as compared to MS diode may be due to the presence of oxide interfacial layer. DLTS measurements have also been performed on MIS Schottky diode and discussed.     

Influence of rapid thermal annealing effect on electrical and structural properties of Pd/Ru Schottky contacts to n-type GaN

Pd/Ru metallization scheme is fabricated on n-GaN as a Schottky contact, and the electrical and structural properties have been investigated as a function of annealing temperature by current–voltage (I–V), capacitance–voltage (C–V), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) measurements. As-deposited Ru/Pd/n-GaN contact yielded Schottky barrier height (SBH) of 0.67 eV (I–V) and 0.79 eV (C–V), respectively. Further, it is observed that the Schottky barrier height increases to 0.80 eV (I–V) and 0.96 eV (C–V) for the contact annealed at 300 °C. However, both I–V and C–V measurements indicate that the barrier height slightly decreased when the contacts are annealed at 400 °C and 500 °C. From the above observations, the optimum annealing temperature for Pd/Ru Schottky contact is 300 °C. Norde method is also employed to extract the barrier height of Pd/Ru Schottky contacts which are in good agreement with those obtained by the I–V technique. X-ray photoelectron spectroscopy results shows that the Ga 2p core-level shift towards the low-energy side for the contact annealed at 300 °C compared to the as-deposited contact. Based on the XPS and XRD results, the reason for the increase in SBH upon annealing at 300 °C could be attributed to the formation of gallide phases at the Ru/Pd/n-GaN interface vicinity. The AFM results showed that the overall surface morphology of the Pd/Ru Schottky contacts on n-GaN is fairly smooth. The above observations reveal that the Pd/Ru Schottky contact is attractive for high-temperature device applications.     

Electrical and structural properties of double metal structure Ni/V Schottky contacts on n-InP after rapid thermal process

The electrical, structural, and surface morphological properties of Ni/V Schottky contacts have been investigated as a function of annealing. The Schottky barrier height value from I–V and C–V measurements for as-deposited Ni/V/n-InP diode is 0.61 eV (I–V) and 0.91 eV (C–V), respectively. It has been observed that the Schottky barrier height decreases with increasing annealing temperature as compared to the as-deposited contact. For the contact annealed at 200 °C, the obtained barrier height decreased to 0.52 eV (I–V) and 0.78 eV (C–V). Further, the annealing temperature increased to 300 and 400 °C, the barrier height slightly increased to 0.58 eV (I–V), 0.82 eV (C–V) and 0.59 eV (I–V), 0.88 eV (C–V). However, after annealing at 500 °C, results then decrease in barrier height to 0.51 eV (I–V) and 0.76 eV (C–V), which is lower than the value obtained for the sample annealed at 200 °C. The Norde method is also employed to extract the barrier height of Ni/V/InP Schottky diode, and the values are 0.68 eV for the as-deposited and 0.56 eV for the contact annealed at 500 °C, which are in good agreement with those obtained by I–V technique. Based on the results of AES and XRD studies, it is concluded that the formation of indium phases at the Ni/V/n-InP interface may be the reason for the increase in the barrier height for the as-deposited contact. The decrease in the barrier height upon annealing at 500 °C may be due to the formation of phosphide phases at the interface. The AFM results showed that there is no significant degradation in the surface morphology (RMS roughness of 0.61 nm) of the contact even after annealing at 500 °C.     

Pavement performance assessment using a cost‐effective wireless accelerometer system

Pavement condition monitoring is required to identify pavements in need of maintenance or rehabilitation. Early identification of reduction in pavement's structural resistance and improving the structural resistance by minor repairs can lead to significantly lower maintenance costs for transportation agencies. In this study, a cost‐effective wireless sensor that can be embedded in the road to measure the transient vibrations due to different applied loads was tested to determine its effectiveness in terms of pavement displacement measurements. Test results show that the vibration sensor, combined with the algorithms, can be embedded in new or existing pavements and used as an accurate wireless displacement sensor. The low cost of the sensor system allows the use of these sensors at high densities for monitoring the performance of an entire road network. Outputs from the developed system can be directly used to evaluate the condition and performance of pavement structure (increasing displacement over time indicating increasing pavement damage). In addition, displacement data from the system can be used to backcalculate pavement layer stiffnesses, which can be used to predict long‐term performance of the pavement structure. Reduction in pavement layer stiffness over time can be used to determine long‐term damage accumulation.     

Research output in pheromone biology: a case study of India

Analyses the growth and development of pheromone biology research productivity in India in terms of publication output as reflected in Science Citation Index (SCI) for the period 1978–2008. It includes 330 publications from India, including 285 articles, 22 notes, 18 reviews, 4 letters and 1 conference paper, from 200 institutions. About 9.4 % of publications is contributed by Indian Institute of Technology, Kanpur followed by Bhabha Atomic Research Centre, Bombay (7.27 %). All the papers published by Indian researchers have appeared in journals with impact factors between 0.20 and 4.14. About 24.24 % of authors contributed single articles. The growth rate of publications varied from 0.30 to 9.09 % per year. The annual growth rate was highest in the year 2006 at 9.09 %. The study reveals that the output of pheromone biology research in India has gradually increased over the years.     

On the cavalier attitude towards referencing

This short note concerns the cavalier attitude that seems to be prevalent now with regard to checking the accuracy of the references that are provided in research publications. Daunting difficulties confront, at times, those trying to check a source, especially when the source is several centuries old and/or in a language that the researcher is not conversant with. Compounding the problem further, at times, are insuperable difficulties with regard to deciding whom or what to accept as proper authority in the attribution of citations, nudging those that are not of sterner stuff to take the easy way out and conform to popular opinion that might be incorrect. In this short note I discuss the difficulties that a researcher might face with regard to proper attribution of ideas.     

On the need for compatibility of thermal and mechanical data in flow problems

In this short paper, we discuss an important compatibility condition which usually goes unmentioned when discussing classical flow problems in fluid mechanics. While results are presented from a supposedly purely mechanical perspective, in reality the problems need to be cast within a fully thermodynamic framework for them to make sense. This subtle issue warrants discussion and forms the subject matter of this short paper. It is shown that many classical solutions would not be possible if the problem is not cast within a thermodynamic framework with critical boundary conditions being specified for appropriate thermal quantities. While that this is so from a physical standpoint is quite obvious, we show here for the first time, that there has to be a certain compatibility between the rate at which work is done and the heat flux at the boundary.     

A novel wideband fractal-shaped MIMO antenna for brain and skin implantable biomedical applications

A novel fractal-shaped wideband multiple-input multiple-output (MIMO) antenna is proposed for brain and skin implantable applications. This antenna works in the 2.4–2.48 GHz band of industrial, scientific, and medical (ISM) standards. The fractal-shaped wideband MIMO antenna is miniature in size with a footprint of $0.13\mathrm{\lambda }\times 0.06\mathrm{\lambda }\times 0.01\mathrm{\lambda }$. Rogers RT/Duroid 6010 high-dielectric substrate material is used to fabricate the optimized design in order to validate the implantable MIMO antenna structure. The same high-permittivity substrate material has been used as a superstrate. Experiments were carried out in brain and skin-mimicking gel at 2.45 GHz in the ISM band. The proposed antenna has a peak gain of −21.3 dBi at 2.45 GHz. High isolation (>20 dB) between two MIMO ports is attained. The proposed antenna achieves a fractional bandwidth of 36.76% and an impedance bandwidth of 1.02 GHz. According to IEEE safety regulations for 1- and 10-g tissues, the computed maximum specific absorption rate (SAR) is safe bound.