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101.
102.
John D. Dow Shang Yuan Ren Jun Shen Run-Di Hong Ruo-Ping Wang 《Journal of Electronic Materials》1990,19(8):829-835
The physics governing deep levels in superlattices and quantum wells is elucidated, with emphasis on the importance of shallow-deep
transitions caused by a band edge passing through a deep level, and the accompanying change in doping character of the impurity. 相似文献
103.
104.
随着科学技术的飞速发展,以及人民物质精神文化生活质量的逐渐提高,人们对于音乐的追求也越来越高。大型的演唱会和各类综合文艺晚会不仅要求演员艺术水平高超,对音乐效果和音乐表现力也有了较高需求。由此,MID(I乐器数字接口)应运而生。通过MIDI技术可以将不同乐器的优势集中到一起,形成其他乐器无法创作比拟的特殊音乐效果,但是,MIDI技术无法实现对音乐作品乐谱的分析。因此,迫切需要一种能够实现乐谱分析的软件程序对MIDI乐谱文件进行解析,实时翻译成乐谱来满足演奏者的需求。本文基于以上背景,提出了一种解析MIDI文件的谱曲软件分析工具开发方案,可以实现对MIDI乐谱文件的分析,将其翻译成对应的乐谱,使乐谱能够直观展示在演奏者面前。 相似文献
105.
Monolayer Semiconductors: Electron Field Emission of Geometrically Modulated Monolayer Semiconductors (Adv. Funct. Mater. 7/2018)
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106.
Haichao Wang Jinlong Wang Chenggui Wang Le Wang Jing Ren Fengyi Cheng 《Wireless Networks》2018,24(6):1979-1989
This paper investigates the problem of distributed joint channel and time slot selection for interference mitigation in the multiple microcells system, where each microcell user determines which channel it should occupy and when it should get access to the serving microcell base station. Considering the characteristics of local interference, a distributed inter-cell time–frequency resource scheduling scheme is proposed, where neighboring users can get access to the same channel at different time slots or different channels at the same time slot. Then, a game is formulated to model the problem, in which the utility function of a individual user is the number of neighboring users occupying the same channel at the same time slot. It is proved to be an exact potential game with at least one pure strategy Nash Equilibrium (NE) point. Moreover, in order to achieve global interference minimization via local information, we propose the Heterogeneous Independent Revision Process (HIRP) to obtain the NE, which allows all users to update their selections simultaneously. Finally, numerical results show that our proposed HIRP guarantees that the interference minimization game converges to the NE and the proposed scheme acquires better performance compared with other existing interference management scheme. 相似文献
107.
Xin Peng Wang Eu-Jin Lim A. Hong Yu Yu Ming-Fu Li Chi Ren Wei-Yip Loh Chun Xiang Zhu Chin A. Trigg A.D. Yee-Chia Yeo Biesemans S. Guo-Qiang Lo Dim-Lee Kwong 《Electron Devices, IEEE Transactions on》2007,54(11):2871-2877
A lanthanum (La)-doped HfN is investigated as an n-type metal gate electrode on SiO2 with tunable work function. The variation of La concentration in (HfinfinLa1-x)Ny modulates the gate work function from 4.6 to 3.9 eV and remains stable after high-temperature annealing (900degC to 1000degC), which makes it suitable for n-channel MOSFET application. An ultrathin high-fc dielectric layer was formed at the metal/SiO2 interface due to the (HfinfinLa1-x)Ny and SiO2 interaction during annealing. This causes a slight reduction in the effective oxide thickness and improves the tunneling current of the gate dielectric by two to three orders. We also report the tunability of TaN with Al doping, which is suitable for a p-type metal gate work function. Based on our results, several dual-gate integration processes by incorporating lanthanum or aluminum into a refractory metal nitride for CMOS technology are proposed. 相似文献
108.
NiSi nanocrystals of high density and good uniformity were synthesized by vapor–solid–solid growth in a gas source molecular beam epitaxy system using Si2H6 as Si precursor and Ni as catalyst. A metal–oxide–semiconductor memory device with NiSi nanocrystal–Al2O3/SiO2 double-barrier structure was fabricated. Large memory window and excellent retention at both room temperature and high temperature of 85 °C were demonstrated. 相似文献
109.
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