偏振态脉冲激光辐射的微孔加工

文中讨论了偏振态脉冲激光辐射微孔加工的一些实验。首次发现了偏振态激光打孔具有的独特优势一良好圆度、边缘光洁整体和较高的重复性;分析了其原因,同时对偏振态脉冲激光辐射影响微孔质量（孔形、孔深、锥度、人口孔径）的一些因素,如泵浦能量、光阑的选择及其大小,光学系统的焦距等也作了较为详细的研究和测试,得到了具有参考价值的结果。     

手征等离子体波导导波控制特性的研究

应用纵向分量法推导出了完全填充手征等离子体金属圆波导的色散方程。通过数值求解完全填充手征等离子体金属圆波导的色散方程,得出了在不同条件下的几个低阶模的模式色散图。由此分析讨论了手征等离子体金属圆波导的基本传播特性并着重分析了手征导纳和外偏置磁场对完全填充手征等离子体金属圆波导的导波特性的影响并获得了有意义的结果。     

30路CCD多路传输器的研制

介绍了３０ 路 Ｃ Ｃ Ｄ 多路传输器 （ Ｃ Ｃ Ｄ Ｍ Ｕ Ｘ） 的设计、制造以及参数测量结果。     

基于模块电路结构的BP神经网络及其应用研究

本文采用一种简化的BP(Back Propagation)神经网络硬件模块实现方法。该方法利用全电流模式电路组成神经元模块,再用若干模块构成简化的BP神经网络。所提出的模块结构网络系统具有在线学习和在线权值存储能力,且可应用于实现编、解码和二维图像识别。文中提供了PSPICE和高级语言计算机仿真结果。     

High‐Power Lithium Metal Batteries Enabled by High‐Concentration Acetonitrile‐Based Electrolytes with Vinylene Carbonate Additive

To enable next‐generation high‐power, high‐energy‐density lithium (Li) metal batteries (LMBs), an electrolyte possessing both high Li Coulombic efficiency (CE) at a high rate and good anodic stability on cathodes is critical. Acetonitrile (AN) is a well‐known organic solvent for high anodic stability and high ionic conductivity, yet its application in LMBs is limited due to its poor compatibility with Li metal anodes even at high salt concentration conditions. Here, a highly concentrated AN‐based electrolyte is developed with a vinylene carbonate (VC) additive to suppress Li⁺ depletion at high current densities. Addition of VC to the AN‐based electrolyte leads to the formation of a polycarbonate‐based solid electrolyte interphase, which minimizes Li corrosion and leads to a very high Li CE of up to 99.2% at a current density of 0.2 mA cm^‐2. Using such an electrolyte, fast charging of Li||NMC333 cells is realized at a high current density of 3.6 mA cm^‐2, and stable cycling of Li||NMC622 cells with a high cathode loading of 4 mAh cm^‐2 is also demonstrated.     

Temperature‐Mediated Engineering of Graphdiyne Framework Enabling High‐Performance Potassium Storage

Graphdiyne (GDY), an emerging type of carbon allotropes, possesses fascinating electrical, chemical, and mechanical properties to readily spark energy applications in the realm of Li‐ion and Na‐ion batteries. Nevertheless, rational design of GDY architectures targeting advanced K‐ion storage has rarely been reported to date. Herein, the first example of synthesizing GDY frameworks in a scalable fashion to realize superb potassium storage for high‐performance K‐ion battery (KIB) anodes is showcased. To begin with, first principles calculations provide theoretical guidances for analyzing the intrinsic potassium storage capability of GDY. Meanwhile, the specific capacity is predicted to be as high as 620 mAh g^?1, which is considerably augmented as compared with graphite (278 mAh g^?1). Experimental tests then reveal that prepared GDY framework indeed harvests excellent electrochemical performance as a KIB anode, achieving high specific capacity (≈505 mAh g^?1 at 50 mA g^?1), outstanding rate performance (150 mAh g^?1 at 5000 mA g^?1) and favorable cycling stability (a high capacity retention of over 90% after 2000 cycles at 1000 mA g^?1). Furthermore, kinetic analysis reveals that capacitive effect mainly accounts for the K‐ion storage, with operando Raman spectroscopy/ex situ X‐ray photoelectron spectroscopy identifying good electrochemical reversibility of GDY.     

基于LabWindows/CVI的多线程测控软件设计技术

多线程技术是W in32操作系统的一项重要软件技术。CVI 6.0及其以后版本提供了线程池和异步定时器两种多线程运行机制,为测控软件的设计开发带来了一次技术飞跃。文中结合测控软件设计实例,详细介绍了在CVI平台下多线程编程技术的应用方法。     

A novel polishing technology for epoxy resin based on 355 nm UV laser

The electromagnetic shielding film has drawn much attention due to its wide applications in the integrated circuit package, which demands a high surface quality of epoxy resin. However, gaseous Cu will splash and adhere to epoxy resin surface when the Cu layer in PCB receives enough energy in the process of laser cutting, which has a negative effect on the quality of the shielding film. Laser polishing technology can solve this problem and it can effectively improve the quality of epoxy resin surface. The paper studies the mechanism of Cu powder spraying on the compound surface by 355 nm ultraviolet (UV) laser, including the parameters of laser polishing process and the remains of Cu content on compound surface. The results show that minimal Cu content can be realized with a scanning speed of 700 mm/s, a laser frequency of 50 kHz and the distance between laser focus and product top surface of -1.3 mm. This result is important to obtain an epoxy resin surface with high quality.     

Al2O3高k栅介质的可靠性

利用反应溅射方法制备了等效氧化层厚度为3．45nm的Al2O3栅介质MOS电容，研究了Al2O3作为栅介质的瞬时击穿和恒压应力下的时变击穿等可靠性特征．击穿实验显示，样品的Al2O3栅介质的等效击穿场强大小为12.8MV／cm.在时变击穿的实验中，Al2O3栅介质表现出类似于SiO2的软击穿现象．不同栅压应力作用的测试结果表明，介质中注入电荷的积累效应是引起软击穿的主要因素，其对应的介质击穿电荷QBD约为30～60C／cm^2．     

A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects

A low-power 1-Mb magnetoresistive random access memory (MRAM) based on a one-transistor and one-magnetic tunnel junction (1T1MTJ) bit cell is demonstrated. This is the largest MRAM memory demonstration to date. In this circuit, the magnetic tunnel junction (MTJ) elements are integrated with CMOS using copper interconnect technology. The copper interconnects are cladded with a high-permeability layer which is used to focus magnetic flux generated by current flowing through the lines toward the MTJ devices and reduce the power needed for programming. The 25-mm/sup 2/ 1-Mb MRAM circuit operates with address access times of less than 50 ns, consuming 24 mW at 3.0 V and 20 MHz. The 1-Mb MRAM circuit is fabricated in a 0.6-/spl mu/m CMOS process utilizing five layers of metal and two layers of poly.