Dependence of Silicon Carbide Product Morphology on the Degree of Mechanical Activation

Mechanical activation before carbothermic reduction can substantially enhance the formation of SiC from SiO₂and carbon mixtures. However, the morphology (e.g., particles or whiskers) of SiC formed from mechanically activated SiO₂and carbon mixtures is dependent of the degree of mechanical activation and the condition of the subsequent carbothermic reduction. These phenomena are investigated and rationalized based on the increased reactivity of the reactants and SiC formation mechanisms.     

时间分幅全息技术及其应用

本文介绍了一种对研究发动机燃烧过程有着重要应用价值的实验技术－时间分幅全息技术，本文就该技术中常常出现的重影问题做了重点研究，通过分析重影出现的根源，找到了一种消除重影的新方法，文章还举例说明了该技术在液体破碎机理问题保研究中的应用。     

搪瓷釉料新颖添加剂铝溶胶

搪瓷釉料新颖添加剂铝溶胶任岳荣（浙江省明矾石综合利用研究所３２５０２８）ＮｅｗＡｄｄｉｔｉｖｅＡｌｕｍｉｎａＳｏｌｆｏｒＧｌａｚｅｏｆＥｎａｍｅｌ￥ＲｅｎＹｕｅｒｏｎｇ（ＺｈｅｊｉａｎｇＩｎｓｔｉｔｕｔｅｏｆＣｏｍｐｒｅｈｅｎｓｉｖｅＵｔｉｌｉｚａｔ...     

近终形薄带连铸工艺技术比较

近终形薄带连铸是钢铁工业简化工序，节能降耗，降低成本最具有竞争能力的一项重大新工艺技术，本文报导了世界各先进工业国近年来开展研究的最新成果，分析比较了诸多机型的优缺点，并提出了突破工艺技术的技术关键和建议。     

高炉冷却技术的开发与应用

通过对中小型高型炉寿命的分析，结合河北省冶金设计院高炉设计的实践经验，总结了高炉冷却设备寿命短的原因，并提出冷却设备在材质和结构上的改进措施。     

三维目标旋转畸变不变光学相关滤波器组的设计

研究了三维目标旋转畸变不变光学相关滤波器组的设计原理，完成了滤波器组参数的计算和编码，以及光学相关识别的计算机模拟。     

P偏振光双表面反射比的角谱及其应用

p-偏振光在镀膜平板基片两面的反射光强度比值的角谱是膜层参数(折射率、消光系数和厚度)的函数.实验表明通过角谱的测量和数值模拟是精确测量薄膜参数的新途径.基于此原理,还试制出掺Sb的SnO2溶胶凝胶薄膜的光化学气敏传感器.     

数字图像纯位相编码分析

研究了图像傅立叶变换过程中的振幅与位相问题，突出了位相在整个变换中的重要性，并利用双位相函数对图像进行加密编码和解码，计算机模拟表明双位相编码和解码能有效的抑制附加噪声。     

Effects of Sc2O3 and MgO passivation layerson the output power of AlGaN/GaN HEMTs

The low temperature (100°C) deposition of Sc₂O₃ or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5×100 μm² HEMTs for both types of oxide passivation layers. Both Sc₂ O₃ and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiN_x passivation which typically showed ⩽2 dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc₂O₃ or MgO passivation. These films appear promising for reducing the effects of surface states on the DC and RF performance of AlGaN/GaN HEMTs