防晃水箱控制高层建筑地震反应的理论研究

防晃水箱是在一般水箱内安置环形防晃板，在高层建筑顶部设置这种水箱可以对建筑物的地震反应作被动控制。本文对这一系统进行了数值模拟，考虑了水箱和结构间的相互耦合作用，研究了水箱对建筑物地震反应的影响，数值分析为合理设计水箱提供了理论依据。     

45号钢二次枝晶臂间距与冷却速度的关系

本文利用可控平均冷却速度的单向凝固实验炉测定了４５号钢在不同平均冷却速度下的冷却曲线，由此得到其在凝固期间的平均冷却速度Ｒ，相应地测量了不同平均冷却速度下试样的二次枝晶臂间距Ｓ２，通过回归，得到了如下关系式：Ｓ２＝７２７Ｒ－０．４１，并将引式成功地应用于实际生产中。     

锻热淬火工艺对工具钢碳化物粒度的影响

研究了锻热淬火工艺对Ｔ１０钢和ＧＣｒ１５钢碳化物技度的影响。结果表明，碳化物粒度随变形量的增大而细化；终锻温度在高于碳化物析出的温度范围内变化，其碳化物粒度都同样细小；终锻温度不宜过低，否则将使碳化物变粗。     

关于我国二乙胺的生产技术及其发展

概述了乙醇氨解法等二乙胺的六类合成方法及国内外二乙胺的生产情况，指出了我国二乙胺生产技术与国外的差距，提出了扩大生产规模、开发下游产品、开发或引进加压加氢工艺等建议     

行为级DSP算法描述的阵列处理器综合方法研究

本文提出了针对递归DSP算法的高层次系统综合流程,并以脉动(systolic)式处理器阵列结构实现.从DSP算法的FDDL行为级描述开始,经由编译及划分,产生数据相关流图(Data Dependency Graph),然后实现对算法流图的空间映射及时域规划,得到算法的信号流图(Signal Flow Graph),经时序重构,生成脉动阵列,最后实现对处理器单元的数据路径综合及控制器综合,并对处理器单元定位,本文同时提出了各设计阶段的算法策略及优化策略,并给出综合结果。     

The mixed-type integral equations for transient elastodynamic plane crack problems

In the present paper, by use of the boundary integral equation method and the techniques of Green fundamental solution and singularity analysis, the dynamic infinite plane crack problem is investigated. For the first time, the problem is reduced to solving a system of mixed-typed integral equations in Laplace transform domain. The equations consist of ordinary boundary integral equations along the outer boundary and Cauchy singular integral equations along the crack line. The equations obtained are strictly proved to be equivalent with the dual integral equations obtained by Sih in the special case of dynamic Griffith crack problem. The mixed-type integral equations can be solved by combining the numerical method of singular integral equation with the ordinary boundary element method. Further use the numerical method for Laplace transform, several typical examples are calculated and their dynamic stress intensity factors are obtained. The results show that the method proposed is successful and can be used to solve more complicated problems.     

High performance CMOS current comparator

A new high-speed CMOS current comparator is described. By changing the buffer of an existing comparator from class B to class AB operation, voltage swings are reduced, resulting in greater speed for small input currents. Simulation results employing a 1.6μm CMOS technology show the response time to a 0.1μA input current to be 11ns and the power dissipation to be 1.4mW, resulting in a five times improvement in speed/power ratio over existing high-speed current comparators     

金刚石薄膜中晶粒尺寸的研究

扫描电子显微研究表明，化学汽相沉积的金刚石薄膜中晶粒大小比较均匀。但随着沉积时间和薄膜厚度的增加，晶粒逐渐变大，且每一层内，存在少量的大金刚石颗粒，讨论了晶粒尺寸变化和大晶粒形成的原因和机制。     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source