Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe

HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications. Molecular beam epitaxy (MBE) has been used successfully for growth of dual-band layers on larger CdZnTe substrates. However, the macrodefect density, which is known to reduce the pixel operability and its run-to-run variation, is larger when compared with layers grown on Si substrate. This paper reports the macrodefect density versus size signature of a well-optimized MBE dual-band growth and a cross-sectional study of a macrodefect that represents the most prevalent class using focused ion beam, scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The results show that the macrodefect originates from a void, which in turn is associated with a pit on the CdZnTe substrate.     

Aerosol-jet-printed, high-speed, flexible thin-film transistor made using single-walled carbon nanotube solution

A high-purity, surfactant-free and stable SWCNT aqueous solution was prepared using a series of chemical and physical processes. The SWCNT solution has a very limited amount of carbonaceous impurities, if any, and a total metal content of well below 500 ppb. It is stable for months without the addition of surfactant. Such SWCNT aqueous solution enables ink-jet printing of the entire fast, flexible SWCNT-based field-effect thin-film transistor (FE-TFT) at room temperature without the engagement of any traditional dry or wet chemical processes used for fabricating silicon-based transistors. High-speed SWCNT-based flexible FE-TFTs were printed using Aerosol Jet^® printing technology. The printed flexible FE-TFTs were characterized to have a current ON-OFF ratio of greater than 130 with an operation frequency of greater than 5 GHz.     

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

In this paper we report recent advances in pulsed-laser-deposited AIN thin films for high-temperature capping of SiC, passivation of SiC-based devices, and fabrication of a piezoelectric MEMS/NEMS resonator on Pt-metallized SiO₂/Si. The AlN films grown using the reactive laser ablation technique were found to be highly stoichiometric, dense with an optical band gap of 6.2 eV, and with a surface smoothness of less than 1 nm. A low-temperature buffer-layer approach was used to reduce the lattice and thermal mismatch strains. The dependence of the quality of AlN thin films and its characteristics as a function of processing parameters are discussed. Due to high crystallinity, near-perfect stoichiometry, and high packing density, pulsed-laser-deposited AlN thin films show a tendency to withstand high temperatures up to 1600°C, and which enables it to be used as an anneal capping layer for SiC wafers for removing ion-implantation damage and dopant activation. The laser-deposited AlN thin films show conformal coverage on SiC-based devices and exhibit an electrical break-down strength of 1.66 MV/cm up to 350°C when used as an insulator in Ni/AlN/SiC metal-insulator-semiconductor (MIS) devices. Pulsed laser deposition (PLD) AlN films grown on Pt/SiO₂/Si (100) substrates for radio-frequency microelectrical and mechanical systems and nanoelectrical and mechanical systems (MEMS and NEMS) demonstrated resonators having high Q values ranging from 8,000 to 17,000 in the frequency range of 2.5–0.45 MHz. AlN thin films were characterized by x-ray diffraction, Rutherford backscattering spectrometry (in normal and oxygen resonance mode), atomic force microscopy, ultraviolet (UV)-visible spectroscopy, and scanning electron microscopy. Applications exploiting characteristics of high bandgap, high bond strength, excellent piezoelectric characteristics, extremely high chemical inertness, high electrical resistivity, high breakdown strength, and high thermal stability of the pulsed-laser-deposited thin films have been discussed in the context of emerging developments of SiC power devices, for high-temperature electronics, and for radio frequency (RF) MEMS.     

The ATSC Digital Television System

The ATSC digital television standard describes a system designed to transmit high-quality video and audio, and ancillary data within a single 6-MHz terrestrial television broadcast channel. This paper outlines the overall architecture of the system and serves as an introduction to the papers that follow in this special issue of the Proceedings of the IEEE.     

A Hybrid AlGaInAs–Silicon Evanescent Amplifier

We report a hybrid AlGaInAs-silicon evanescent amplifier incorporating a silicon waveguide with a III-V gain medium. The optical mode of the hybrid amplifier is mostly confined to the silicon waveguide and evanescently coupled to the AlGaInAs quantum-well (QW) region where optical gain is provided by electrical current injection. These two different material systems are bonded by low-temperature oxygen plasma assisted wafer bonding at 300 degC. The fabricated device shows 13 dB of maximum chip gain with 11 dBm of output saturation power. Evanescent coupling allows a lower active region confinement factor to provide a higher saturation output power than amplifiers with centered QWs, which is important for applications that require linear amplification     

Copper@ZIF-8 Core-Shell Nanowires for Reusable Antimicrobial Face Masks

SARS-CoV-2 and other respiratory viruses spread via aerosols generated by infected people. Face masks can limit transmission. However, widespread use of disposable masks consumes tremendous resources and generates waste. Here, a novel material for treating blown polypropylene filtration media used in medical-grade masks to impart antimicrobial activity is reported. To produce thin copper@ZIF-8 core-shell nanowires (Cu@ZIF-8 NWs), Cu NWs are stabilized using a pluronic F-127 block copolymer, followed by growth of ZIF-8 to obtain uniform core-shell structures. The Cu@ZIF-8 NWs are applied to filtration media by dip coating. Aerosol filtration efficiency decreases upon exposure to ethanol (solvent for dip-coating), but increases with addition of Cu@ZIF-8 NWs. Cu@ZIF-8 NWs shows enhanced antibacterial activity, compared to Cu NWs or ZIF-8 alone, against Streptococcus mutans and Escherichia coli. Antiviral activity against SARS-CoV-2 is assayed using virus-infected Vero E6 cells, demonstrating 55% inhibition of virus replication after 48 h by 1 µg of Cu@ZIF-8 NWs per well. Cu@ZIF-8 NWs’ cytotoxicity is tested against four cell lines, and their effect on inflammatory response in A549 cells is examined, demonstrating good biocompatibility. This low-cost, scalable synthesis and straightforward deposition of Cu@ZIF-8 NWs onto filter media has great potential to reduce disease transmission, resource consumption, and environmental impact of waste.     

A comparison of electronic-reliability prediction models

One of the most controversial procedures in reliability is the use of reliability prediction techniques based on component failure data to estimate system failure rates. The International Electronics Reliability Institute (IERI) at Loughborough University is in a unique position. Over many years, much reliability information has been collected from leading British and Danish electronic manufacturing companies. These data are of such high quality that IERI can perform the comparison exercise with many circuit boards (CB) of different types. Several CB were selected from the IERI field-failure database and their reliability was predicted and compared with the observed field-performance. The prediction techniques were based on the: M217E [US Mil-Hdbk-217E]; HRD4; Siemens (SN29500); CNET; and Bellcore (TR-TSY-000332) models. For each model, the associated published failure rates were used. Hence, parts count analyses were performed on several CB from the database; these analyses were compared with the field failure rate. The prediction values differ greatly from the observed field behavior and from each other. Further analysis showed that each prediction model was sensitive to widely different physical parameters. The results are summarized. Some of the models are more sensitive to a factor that varies according to an Arrhenius model, such as temperature and electrical stress, while others are more sensitive to the discrete π factors used to model environment and quality     

2DEG base hot electron transistors fabricated using MBE and in situion beam lithography

A vertical hot electron transistor incorporating a two-dimensional electron gas (2DEG) base has been fabricated in the GaAs-AlGaAs materials system. The difficulties caused by the need to form selective ohmic contacts to the different conducting layers have been overcome using a combination of in situ focused ion beam (FIB) isolation and molecular beam epitaxial (MBE) regrowth. This has allowed a high yield of working devices to be achieved with a typical common emitter current gain of h_FE=6 at low temperatures     

Fabrication of Sub‐10 nm Metallic Lines of Low Line‐Width Roughness by Hydrogen Reduction of Patterned Metal–Organic Materials

The fabrication of very narrow metal lines by the lift‐off technique, especially below sub‐10 nm, is challenging due to thinner resist requirements in order to achieve the lithographic resolution. At such small length scales, when the grain size becomes comparable with the line‐width, the built‐in stress in the metal film can cause a break to occur at a grain boundary. Moreover, the line‐width roughness (LWR) from the patterned resist can result in deposited metal lines with a very high LWR, leading to an adverse change in device characteristics. Here a new approach that is not based on the lift‐off technique but rather on low temperature hydrogen reduction of electron‐beam patterned metal naphthenates is demonstrated. This not only enables the fabrication of sub‐10 nm metal lines of good integrity, but also of low LWR, below the limit of 3.2 nm discussed in the International Technology Roadmap for Semiconductors. Using this method, sub‐10 nm nickel wires are obtained by reducing patterned nickel naphthenate lines in a hydrogen‐rich atmosphere at 500 °C for 1 h. The LWR (i.e., 3 σ_LWR) of these nickel nanolines was found to be 2.9 nm. The technique is general and is likely to be suitable for fabrication of nanostructures of most commonly used metals (and their alloys), such as iron, cobalt, nickel, copper, tungsten, molybdenum, and so on, from their respective metal–organic compounds.     

Dynamic interactions between accommodation and convergence

Frequency-domain equations were derived for the current dual-interaction model of accommodation and convergence control, and its adaptive behavior was related to the system's parameters. Contrary to predictions based on the steady-state performance of the model [18], dynamic analysis showed that the AC/A is sensitive to the method of measurement and a procedure is established for its reliable determination. Additionally, the results provided theoretical support for the empirical finding that low AC/A and CA/C ratios are associated with high accommodative and convergence adaptation, respectively [15]. The derived equations should help future studies relate the physiological behavior of accommodative and convergence to specific model parameters.