全文获取类型
收费全文 | 449篇 |
免费 | 8篇 |
专业分类
电工技术 | 3篇 |
化学工业 | 156篇 |
金属工艺 | 3篇 |
机械仪表 | 21篇 |
建筑科学 | 22篇 |
矿业工程 | 1篇 |
能源动力 | 8篇 |
轻工业 | 24篇 |
水利工程 | 2篇 |
无线电 | 42篇 |
一般工业技术 | 70篇 |
冶金工业 | 39篇 |
原子能技术 | 4篇 |
自动化技术 | 62篇 |
出版年
2022年 | 11篇 |
2021年 | 12篇 |
2020年 | 8篇 |
2019年 | 3篇 |
2018年 | 8篇 |
2017年 | 8篇 |
2016年 | 11篇 |
2015年 | 12篇 |
2014年 | 15篇 |
2013年 | 31篇 |
2012年 | 33篇 |
2011年 | 19篇 |
2010年 | 14篇 |
2009年 | 17篇 |
2008年 | 21篇 |
2007年 | 30篇 |
2006年 | 17篇 |
2005年 | 21篇 |
2004年 | 8篇 |
2003年 | 12篇 |
2002年 | 12篇 |
2001年 | 5篇 |
2000年 | 12篇 |
1999年 | 5篇 |
1998年 | 6篇 |
1997年 | 4篇 |
1996年 | 8篇 |
1995年 | 6篇 |
1994年 | 7篇 |
1993年 | 4篇 |
1992年 | 7篇 |
1991年 | 7篇 |
1990年 | 5篇 |
1989年 | 5篇 |
1988年 | 6篇 |
1987年 | 2篇 |
1986年 | 3篇 |
1982年 | 3篇 |
1981年 | 7篇 |
1980年 | 3篇 |
1979年 | 7篇 |
1978年 | 2篇 |
1976年 | 2篇 |
1974年 | 2篇 |
1973年 | 2篇 |
1971年 | 2篇 |
1968年 | 1篇 |
1967年 | 1篇 |
1964年 | 1篇 |
1957年 | 2篇 |
排序方式: 共有457条查询结果,搜索用时 15 毫秒
451.
Tao Tong Pavan K. Hanumolu Gabor C. Temes 《Analog Integrated Circuits and Signal Processing》2012,71(3):407-410
A semi-synchronous clocking scheme is proposed for successive approximation register (SAR) analog-to-digital converters (ADCs). The conversion time is dynamically allocated to the comparator decision and to the DAC settling in every bit cycle. This significantly improves the conversion speed. 相似文献
452.
Li CY Sung FC Chen FL Lee PC Silva M Mezei G 《The Science of the total environment》2007,376(1-3):151-159
Many epidemiological studies have investigated residential exposure to extremely-low-frequency magnetic field (ELF-MF) for children, but exposure at schools where children may stay up to 8 h every weekday was rarely considered. Between March and June 2004, we carried out a field study in Taipei City and County of northern Taiwan to explore ELF-MF exposure pattern among children at schools with high voltage transmission lines (HVTL) running through the campuses. One hundred and one children attending 14 schools with nearby HVTL (exposed group) and 123 children of 18 schools at least 100 m away from HVTL (unexposed group) were monitored for 24-hour personal ELF-MF exposure. Selected classrooms and playgrounds within the buffer regions (i.e., within 30 m of HVTL) and those away from the buffer regions were also assessed, using spot measurements, to determine the extent to which HVTL may contribute to the environmental exposure on campuses. Results show that the two groups didn't differ significantly for both mean exposure and proportion of exposure greater than 0.4 micro-Tesla (microT) estimated for 24 h. However, we noted that 17.8% of the exposed children had a personal mean exposure greater than 0.4 microT during school hours, significantly (p=0.011) higher than that (6.5%) estimated for the unexposed children. An even higher percentage (27.3%) was observed for 11 students with their classrooms intersecting the buffer regions. Playgrounds near buffer regions showed a significantly higher ELF-MF than the other areas of the exposed schools (0.70 vs 0.18 microT, p=0.043). The study demonstrates a wide range of exposures to ELF-MF among school children at campuses adjacent to HVTL. Children attending the exposed schools may have a higher chance of experiencing a mean exposure greater than 0.4 microT during school hours. 相似文献
453.
J. R. Tuttle M. A. Contreras A. M. Gabor K. R. Ramanathan A. L. Tennant D. S. Albin J. Keane R. Noufi 《Progress in Photovoltaics: Research and Applications》1995,3(6):383-391
We have fabricated high-efficiency Cu(In, Ga)Se2(CIGS)-based photovoltaic (PV) devices by four different processes. Each process may be characterized as cither sequential or concurrent deposition of the metals with or without an activity of selenium. A world-record, total-area efficiency of 17.1% has been achieved by the concurrent delivery of the metals in the presence of selenium. Gallium has been introduced into the device in such a manner as to produce homogeneous, normal profiling and double-profiling graded bandgap structures. This has resulted in an open-circuit voltage (Voc) parameter of 680 mV and a fill factor of over 78%. A growth model has been developed allowing for simple translation of these processes to a manufacturing environment for the large-scale production of modules. 相似文献
454.
455.
Miguel A. Contreras Andrew M. Gabor Andrew L. Tennant Sally Asher John Tuttle Rommel Noufi 《Progress in Photovoltaics: Research and Applications》1994,2(4):287-292
This communication reports an MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo/glass polycrystalline solar cell with a confirmed total-area conversion efficiency of 16.4%. the thin-film Cu(In,Ga)Se2 absorber was fabricated by computer-controlled physical vapor deposition (PVD) from the elemental sources. the resulting absorber has a Gal/In compositional grading that we refer to as a notch. Capacitance-voltage (C-V) measurements also reveal a graded doping profile in the region near the electronic p-n junction. the enhanced device performance is characterized by an open-circuit voltage (Voc) of 660 mV and a particularly high fill factor (FF) of 78.7%. 相似文献
456.
Gisela Weber J. Schaumann Constanze Carl S. Schwarz Rosemarie Leisner 《Advanced Synthesis \u0026amp; Catalysis》1989,331(2):223-230
Ethinylestradiol ( 1 ) was converted into the corresponding 6-oxo derivative 7 by a short and simple procedure involving acetate 10 and ketone 11 . Phase transfer catalyzed esterification of compound 7 with propane-2-sulfonyl chloride gave sulfonate 12 . 相似文献
457.
J. R. Tuttle M. A. Contreras T. J. Gillespie K. R. Ramanathan A. L. Tennant J. Keane A. M. Gabor R. Noufi 《Progress in Photovoltaics: Research and Applications》1995,3(4):235-238
We report a world-record, total-area efficiency of 17.1% for a polycrystalline thin-film Cu(In,Ga)Se2-based photovoltaic solar cell. the incorporation of Ga to raise the absorber bandgap has been accomplished successfully and in such a manner that an open-circuit voltage of 654 mV and a fill factor of greater than 77% have been achieved. We describe briefly the deposition process, the device structure, and the device performance characteristics. 相似文献