石家庄市CATV系统网络技术指标分配初探

在ＣＡＴＶ系统网络工程设计中，技术指标的分配产关键问题。本文介绍了石家庄市在系统设计时采用的符合实际的设计程序，并对系统前端，传输及用户网各部分技术指标的确定，计算与分配方法，指标的核算等作了较详细地阐述，以供同行参考。     

The inverse mapping and distortion measures for 8-node hexahedral isoparametric elements

The inverse relations of the isoparametric mapping for the 8-node hexahedra are derived by using the theory of geodesics in differential geometry. Such inverse relations assume the form of infinite power series in the element geodesic coordinates, which are shown to be the skew Cartesian coordinates determined by the Jacobian of the mapping evaluated at the origin. By expressing the geodesic coordinates in turn in terms of the isoparametric coordinates, the coefficients in the resulted polynomials are suggested to be the distortion parameters of the element. These distortion parameters can be used to sompletely describe the inverse relations and the determinant of the Jacobian of the mapping. The meanings of them can also be explained geometrically and mathematically. These methods of defining the distortion measures and deriving the inverse relations of the mapping are completely general, and can be applied to any other two-or three-dimensional isoparametric elements.     

多级泵站老化的模糊评价模式

多级泵站是一个包括各级泵站及泵站内各种设施的复杂系统，系统内各个泵站的老化直接影响整个泵站系统的正常运行，采用单元化方法将多级泵站系统单元伦，引和泵站老化评价指标，建立了多级泵站老化的模糊评价模式，并对甘肃省景泰高扬程提水灌区多级泵站系统进行分析，提出了评价多级泵站老化程度的排序方法。     

新一代银行大型机网络接入技术研究

银行大型机网络接入技术的转型是当前一个非常重要的研究与应用课题。文章在成功实现银行大型机网络接入技术转型的基础上,分析了相关新技术,解决了转型中的关键问题,提出并实现了一种稳定高效的银行大型机网络接入技术方案,对银行大型机网络接入技术的转型具有指导意义,对银行信息化技术研究具有重要参考价值。     

AN EXTENDED MODELING OF TIDE-WAVE MOTION

1 .　ＩＮＴＲＯＤＵＣＴＩＯＮＴｏｓｔｕｄｙｔｈｅｍｏｔｉｏｎｏｆｔｈｅｔｉｄｅ ｗａｖｅｓ,ｔｈｅｓｈａｌｌｏｗｗａｔｅｒｅｑｕａｔｉｏｎｓ ,ｉ.ｅ .ｔｈｅｖｅｒｔｉｃａｌｉｎｔｅｒｇｒａ ｔｉｏｎｏｆｔｈｅｃｏｎｔｉｎｕｉｔｙｅｑｕａｔｉｏｎａｎｄｍｏｍｅｎｔｕｍｅｑｕａ ｔｉｏｎ ,ｉｓｃｏｎｓｉｄｅｒｅｄａｓｔｈｅｇｏｖｅｒｎｉｎｇｅｑｕａｔｉｏｎｓ.Ｂｙａｂｏｖｅｅｑｕａｔｉｏｎｓｔｗｏｅｑｕａｔｉｏｎｓｒｅｌａｔｅｄｔｏｔｈｅｈｏｒｉｚｏｎ ｔａｌｆｌｕｘｏｆｔｈｅｔｉｄｅ ｃｕｒｒｅｎｔｓａ…     

中国的主要水问题及水文学的机遇

从水资源开发利用与保护、水旱灾害防治等方面论述中国当前存在的主要水问题：水危机和水浪费同时存在、水污染日趋严重、防洪减灾任重道远、生态环境破坏严重、全球气候变暖产生不利影响；进而论述水文学研究面临的新课题：水文现象的不确定性、人类活动对水文的影响、水位频率计算、水资源开发利用的最佳效应、水资源供需分析、农业节水灌溉机理及水旱灾害的防治，并指出必须加强对这些新课题的研究     

均衡营养早餐的研制

根据膳食营养的要求,以燕麦、爆裂玉米、奶粉、鸡胸肉、胡萝卜和香菜为原料,采用微波技术和冷冻干燥技术生产均衡营养早餐,确定了最佳的配方为燕麦片15g、爆裂玉米8g、奶粉10g、鸡肉丁5g、胡萝卜丁0.5g、香菜干0.5g、盐或糖1g.     

基于S-CDMA的HFC上行信道接入协议性能仿真分析

讨论了基于S－CDMA的HFC网上行信道的高效接入协议－SAMA，提出了双信道接入机制的工作原理，并对系统性能进行了分析与计算机仿真，得到一些有意义的结论。     

Flammability and thermal stability studies of ABS/Montmorillonite nanocomposite

Acrylonitrile–butadiene–styrene (ABS)/montmorillonite nanocomposites have been prepared using a direct melt intercalation technique by blending ABS and organophilic clay of two different particle sizes: OMTa (5 µm) and OMTb (38 µm). Their structure and flammability properties were characterized by X‐ray diffraction, high resolution electronic microscopy (HREM), thermogravimetric analysis (TGA) and cone calorimeter experiments. The results of HREM showed that ABS/5 wt% OMTa nanocomposite was a kind of intercalated–delaminated structure, while ABS/5 wt% OMTb nanocomposite was mainly an intercalated structure. The nanocomposites showed a lower heat release rate peak and higher thermal stability than the original ABS by TGA and cone calorimeter experiments. Also, the intercalated nanocomposite was more effective than an exfoliated–intercalated nanocomposite in fire retardancy. Copyright © 2003 Society of Chemical Industry     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.