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991.
In the paper on Generic rules to evaluate system-failure frequency, (see ibid., vol.49, p.85-7, 2000) the authora did not consider the case of shorter mission times while presenting the rules to evaluate system-failure frequency. Time-specific failure-frequency calculations are required for the systems with shorter mission times. One of the practical uses of time-specific failure-frequency is in finding reasonably accurate estimates of failure-rate and reliability of large systems consisting of repairable components, by using combinatorial methods (without using Markov models). This paper shows that, with some minor modifications, the rules in the original paper for evaluating steady-state failure-frequency can be used to find the time-specific failure-frequency  相似文献   
992.
A dyeing profile for a range of reactive dyes suitable for application to cellulosic knitwear is defined. Such a profile shows good level-dyeing, reproducibility and fastness properties together with potential for simplified dyeing processes.  相似文献   
993.
This paper discusses the successful application of the Acoustic Emission Technique (AET) for detection and location of leak paths present on the inaccessible side of an end shield of a Pressurised Heavy Water Reactor (PHWR). The methodology was based on the fact that air and water leak AE signals have different characteristic features. Baseline data was generated from a sound end-shield of a PHWR for characterizing the background noise. A mock up end-shield system with saw cut leak paths was used to verify the validity of the methodology. It was found that air leak signals under pressurisation (as low as 3 psi) could be detected by frequency domain analysis. Signals due to air leaks from various locations of a defective end-shield were acquired and analysed. It was possible to detect and locate leak paths. Presence of detected leak paths were further confirmed by alternate test.  相似文献   
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995.
In this article Mr. Coppie calls attention to the current taxpayer's revolt sweeping the country and points to its potentially ominous meaning for cities. He believes the revolt is motivated by a concern for the need for greater accountability for performance in the public sector than actual tax burdens or tax increases. He says most cities are in need of substantial additional intergovernmental assistance and this will be very difficult to come by in the near future. He says cities must give a high priority to comprehensive financial management and that there will be a relationship between higher levels of government responding to the demands for fiscal assistance and the ability of cities to manage their resources effectively and efficiently. Specifically, Mr. Coppie discusses the following components of financial management: Multi-Year Financial Planning; Issue Identification and Analysis; Productivity Measures; Methods of Disclosure; Training Programs; and A Management Information System. Mr. Coppie is frank to point out that financial management by itself will not solve a city's financial needs. It is, however, an important element in improving a city's credibility and may make it easier to get intergovernmental assistance.  相似文献   
996.
Historical developments regarding the realization of the importance of reliable thermophysical properties data in engineering applications are presented. The events leading to the establishment of the Symposium on Thermophysical Properties in 1959 and the accomplishments of the symposia series since then are discussed. Contributions of the National Bureau of Standards to the thermophysical properties field are described.Welcoming address presented at the Ninth Symposium on Thermophysical Properties, June 24–27, 1985, Boulder, Colorado, U.S.A.  相似文献   
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Si/SiGe n-type modulation-doped field-effect transistors grown on a very thin strain-relieved Si/sub 0.69/Ge/sub 0.31/ buffer on top of a Si(100) substrate were fabricated and characterized. This novel type of virtual substrate has been created by means of a high dose He ion implantation localized beneath a 95-nm-thick pseudomorphic SiGe layer on Si followed by a strain relaxing annealing step at 850/spl deg/C. The layers were grown by molecular beam epitaxy. Electron mobilities of 1415 cm/sup 2//Vs and 5270 cm/sup 2//Vs were measured at room temperature and 77 K, respectively, at a sheet carrier density of about 3/spl times/10/sup 12//cm/sup 2/. The fabricated transistors with Pt-Schottky gates showed good dc characteristics with a drain current of 330 mA/mm and a transconductance of 200 mS/mm. Cutoff frequencies of f/sub t/=49 GHz and f/sub max/=95 GHz at 100 nm gate length were obtained which are quite close to the figures of merit of a control sample grown on a conventional, thick Si/sub 0.7/Ge/sub 0.3/ buffer.  相似文献   
1000.
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