Measurement and Identification of the Parameters of SPICE-Models of a Bipolar Transistor

A method of measuring and identifying the static parameters of a bipolar transistor is considered. The characteristic of the transistor, from which the parameters of the model are determined, is chosen depending on what group the calculated parameters belong to. The characteristics are measured in such a way that the equations of the model describing them can be reduced to the simplest form.     

Corrected Sum Rule, Generalized Virial Identity and Elementary Excitation Spectrum of Bose–Einstein Condensates at Any Trapped Atom Number

Using a corrected sum rule and a generalized virial identity, we study the analytical expression for entire modes of the collective elementary excitation spectrum in a trapped Bose–Einstein condensate at any atom number. Explicit analytical formulas for the spectrum are obtained for the harmonic traps with both spherical symmetry and axial symmetry using the gaussian approximation for the N-body ground-state wave function of the condensate. These formulas give the simple dependence of all energy levels on the atom numbers, their interaction strength and trap geometry parameters.     

Optical-transmission characteristics of optical-fiber cables and installed optical-fiber cable networks for WDM systems

Many cables containing 1.3-/spl mu/m zero-dispersion single-mode (SM) optical fibers are installed in trunk and access networks. Recently, there have been a number of studies on wavelength-division-multiplexing (WDM) systems designed to increase transmission capacity and flexibility. If we can construct WDM systems using SM optical-fiber cable networks designed to transmit using wavelengths in the 1.3-/spl mu/m window (O-band), this will prove very effective in reducing construction costs. It is therefore important to examine the wavelength dependence of the transmission characteristics of SM optical-fiber cables and networks that have already been installed and in which several optical fibers are joined. In this paper, we describe the measured optical characteristics of SM optical-fiber cables and installed optical-fiber cable networks at various wavelengths. The optical characteristics were stable in the 1.46 to 1.625-/spl mu/m wavelength range and we confirmed that the installed SM optical-fiber cable networks could be used for WDM system applications.     

Microscale Patterning of Mesoscopic PZN-PT Single Crystal Films by Crystal ion Slicing and Laser-Induced Etching

Advances in the fabrication of solid-solution single crystal relaxor ferroelectrics have made it possible to produce highly efficient piezoelectric crystals, and have attracted renewed interest in the use of these crystals for a new generation of piezoelectric transducers, actuators and sensors. Of particular interest is their incorporation into micro-electromechanical systems (MEMS). In this paper we report on the laser-induced wet chemical etching of lead zinc niobate-lead titanate (PZN-PT) in hydrochloric acid (HCl). Argon-ion laser radiation at power levels up to 4 W is focused to a spot diameter of about 15μm and results in the chemical etching of grooves at patterning speeds up to 5μm/sec. Crystal ion slicing, an ion-implant-based film separation technique, is used in combination with laser etching to form 5 to 10μm-thick patterned and freestanding films for incorporation into micro-electromechanical devices.     

Velocity selective filters recursively implemented in the spatiotemporal domain.

Energy-based methods for motion estimation in image sequences process the input data either in the spatiotemporal or in the frequency domain. In both cases, the algorithms already described in the literature often require a huge number of elementary operations. In this paper, we describe a class of velocity selective filters which yield an accurate detection of the edges moving in the sequence. We first present a filtering scheme based on a convolution operation computed on a finite size neighborhood and describe its properties in the spatiotemporal and frequency domains. Then, we show that filters with similar properties can be implemented recursively, i.e., as convolutions computed on infinite-size neighborhoods. As an example, we finally show the filters' responses in the case of two superimposed translational motions.     

X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling

A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated.     

Using the magneto-optical Kerr effect to study magnetization processes in two-dimensional magnonic crystals based on YIG thin films

The magneto-optical Kerr effect for red (628 nm) and green (532 nm) light is used to study magnetization processes in 2D magnonic crystals obtained by etching pits with the diameter D ≈ 32 μm to a depth of t ≤ 2 μm in a 16.1-μm-thick film of yttrium iron garnet (YIG). Hysteresis loops obtained in the case of the inplane crystal magnetization at 628 nm are characterized by lower saturation fields H _s and higher remanent magnetizations than those obtained at 532 nm, a result that is attributed to different absorption coefficients of the YIG film at these wavelengths. This difference between the magnetization curves reflects the fact that the magnonic-crystal surface probed with the green light makes a greater contribution to the magneto-optical Kerr effect. Therefore, the green light is more sensitive to the demagnetizing fields, which govern magnetization processes in the magnonic crystals.     

Nondegenerate Phase-Locking of a Semiconductor Laser by Sideband Injection

A semiconductor laser rate equation theory is presented that describes sideband injection locking under both weak optical injection and current modulation. By simultaneous optical injection and current modulation, control of both the phase and the frequency of a semiconductor laser is demonstrated. The phase-locked semiconductor laser operates at a different frequency to the optical injection source, with a frequency-difference given by the current modulation frequency. This method can be used to produce broadband sources, such as those producing ultrashort pulses and those required for coherent control, or to create high-frequency electronic oscillator sources with phase control by interference beating     

Second harmonic generation from a ferroelectric film

We derive an expression for transmittivity (T_SHG) of second harmonic generation (SHG) signals from a ferroelectric (FE) film. Intensities of up and down fields in the medium are investigated in relation to T_SHG. The derivations are made based on undepletion of input fields and nonlinear wave equation derived from the Maxwell equations. We present two cases: film without mirrors and with partial mirrors. Expressions for the newly derived nonlinear susceptibility coefficients of SHG for real crystal symmetry [J. Opt. Soc. Am. B 19 (2002) 2007] are used to get more realistic results. Variations in T_SHG with respect to film thickness are illustrated.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.