Personal spaces — ePerSpace

This paper describes the ePerSpace research project which aims to significantly increase user acceptance of networked audiovisual systems and applications at home and virtually anywhere by enabling innovative interoperable value-added personalised networked services and applications. Moreover, it aims to develop an open architecture and a framework that will significantly increase the speed of developing novel value-added personalised services by reusing well-defined system components with open APIs. The structure of the paper follows the methodology of the project. It starts with a vision of future personalised services from the users’ perspective by developing five scenarios. These scenarios are then used to extract the requirements of the personalisation framework which is then described in terms of its personalisation, service management, digital home environment management and content adaptation capabilities.     

Highly integrated direct conversion receiver for GSM/GPRS/EDGE with on-chip 84-dB dynamic range continuous-time /spl Sigma//spl Delta/ ADC

This paper describes a highly digitized direct conversion receiver of a single-chip quadruple-band RF transceiver that meets GSM/GPRS and EDGE requirements. The chip uses an advanced 0.25-/spl mu/m BiCMOS technology. The I and Q on-chip fifth-order single-bit continuous-time sigma-delta (/spl Sigma//spl Delta/) ADC has 84-dB dynamic range over a total bandwidth of /spl plusmn/135 kHz for an active area of 0.4 mm/sup 2/. Hence, most of the channel filtering is realized in a CMOS IC where digital processing is achieved at a lower cost. The systematic analysis of dc offset at each stage of the design enables to perform the dc offset cancellation loop in the digital domain as well. The receiver operates at 2.7 V with a current consumption of 75 mA. A first-order substrate coupling analysis enables to optimize the floor plan strategy. As a result, the receiver has an area of 1.8 mm/sup 2/.     

High spatial order finite element method to solve Maxwell's equations in time domain

This paper presents a finite element method with high spatial order for solving the Maxwell equations in the time domain. In the first part, we provide the mathematical background of the method. Then, we discuss the advantages of the new scheme compared to a classical finite-difference time-domain (FDTD) method. Several examples show the advantages of using the new method for different kinds of problems. Comparisons in terms of accuracy and CPU time between this method, the FDTD and the finite-volume time-domain methods are given as well.     

MOS RF reliability subject to dynamic voltage stress-modeling and analysis

Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of dc stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance.     

8-Gbit/s transmission experiment over 68 km of optical fiber using a Ti:LiNbO3external modulator

We describe the performance of an experimental 1.5-μm lightwave transmission system operating at 8 Gbit/s over 68.3 km of single-mode fiber. The dispersion penalty is limited to 1 dB through the use of external modulation and is attributable to the intrinsic information bandwidth.     

Semiconductor optical amplifier for CWDM operating over 1540-1620 nm

A semiconductor optical amplifier was developed for coarse wavelength-division-multiplexing (CWDM) operating over 1540-1620 nm (C-L band). A unique quantum-well structure was designed to meet the requirements for the CWDM operation such as wide bandwidth, low polarization-dependent gain, and high-saturation power at the short wavelength end of the band (1540 nm). Over the band, 24-dB maximum chip gain was obtained with less than 4.3-dB gain flatness and more than 14.6-dBm saturation power.