Prediction of back break in blasting using random decision trees

Back break is an unsolicited phenomenon caused due to rock condition, blast geometry, explosive and initiation system in mines. It does not help in creating a smooth high wall and free face for next blasting due to cracks, overhang and under-hang. It can cause rockfall during drilling due to the cracks present in the in situ rock mass at the perimeter. Due to improper free face created from the previous blast and the presence of loose strata in the face increases the overall cost of production. Therefore, predicting and subsequently optimising back break shall reduce their problems to some extent. In this paper, an attempt is made to predict back break using the random forest method. The variables used for the study was such as burden to spacing ratio, stemming to hole-depth ratio, p-wave velocity and the density of explosive. For the random forest model, R² 0.9791 and RMSE 0.87899 and for linear regression was R² was 0.824 and root mean square error (RMSE) 0.72, respectively. From the field trials, it was evident that the use of low-density emulsion can help in reducing the back break and optimise the overall cost of the blasting process. The same results were validated using Random forest method wherein the model R² was 0.9791 and RMSE was 0.8799.

     

Development of an integrated sampler based on direct 222Rn/220Rn progeny sensors in flow-mode for estimating unattached/attached progeny concentration

A flow-mode integrated sampler consisting of a wire-mesh and filter-paper array along with passive solid state nuclear track detectors has been developed for estimating unattached and attached fraction of ²²²Rn/²²⁰Rn progeny concentration. The essential element of this sampler is the direct ²²²Rn/²²⁰Rn progeny sensor (DRPS/DTPS), which is an absorber-mounted-LR115 type nuclear track detector that selectively registers the alpha particles emitted from the progeny deposited on its surface. During sampling at a specified flow-rate, the unattached progeny is captured on the wire-mesh; while the attached progeny gets transmitted and is captured on the filter-paper. The alpha particles emitted by the deposited progeny atoms are registered on the sensors placed at a specified distance facing the wire-mesh and the filter-paper, respectively. The various steps involved in the development of this flow-mode direct progeny sampler such as the optimization of the sampling rate and the distance between the sensor and the deposition substrate are discussed. The sensitivity factor of the DTPS-loaded sampler for ²²⁰Rn progeny deposited on the wire-mesh and filter-paper is found to be 23.77 ± 0.64 (track cm^?2 h^?1) (Bq m^?3)^?1 and 22.30 ± 0.18 (track cm^?2 h^?1) (Bq m^?3)^?1, respectively; while that of DRPS-loaded sampler for ²²²Rn progeny deposition, is 3.03 ± 0.14 (track cm^?2 h^?1) (Bq m^?3)^?1 and 2.08 ± 0.07 (track cm^?2 h^?1) (Bq m^?3)^?1, respectively. The highlight of this flow-mode sampler is its high sensitivity and that it utilizes the passive technique for estimating the unattached and attached progeny concentration, thus doing away with the alpha counting procedures.     

Vortex characteristics due to nozzle clogging in water caster mould: modelling and validation

In continuous slab casting, clogging in the submerged entry nozzle (SEN) ports leads to flow asymmetry and vortex formation in the mould. Knowledge of vortexing and its influence on product quality is fundamental for defect-free production. In this study, the interconnected effects of nozzle clogging and SEN submergence depth, variation on flow asymmetry and vortex characteristics in a 0.4 scale water caster have been characterised by CFD investigation and validated with experimental results from the authors’ previous work. Mean flow velocities at the sub-meniscus and near the port exit predicted by the computational model are compared with the time-averaged values of the impeller probe velocity measurements and found to be in reasonable agreement. Three different clogging conditions (0, 33 and 66% in the left port of the SEN) for SEN submergence depth of 60?mm are studied and the 66% clogging produced vortices having largest diameter, which is consistent with the experimental observations. The effects of SEN submergence depth on flow asymmetry and vortexing are investigated with three different conditions – 40, 60 and 80?mm. It is found that the shallow SEN submergence depth (40?mm) produces vortices of largest diameter and the flow is most stable for a SEN submergence depth of 60?mm among the three cases. Vortex bending towards the SEN as noticed in the experimental observations is also observed in the computational study. This work illustrates the possibility of capturing features of vortexing using validated CFD model.     

A review on biological control and metabolism of aflatoxin

The series of events that led to the discovery of aflatoxin as a potent carcinogen, its biosynthesis, mechanism of action, structure-function relationship provide interesting insight into the economical and technological factors involved in the development of an effective control measure for the toxin. Scientists all over the world are making continuous efforts to explore a generalized process of detoxification, which can bring down the toxin content in heterogenous commodities to a threshold level. In this article biological control methods with special emphasis on in vivo and in vitro enzymatic detoxification of aflatoxin have been reviewed. Future areas of research involving large-scale enzymatic detoxification and modified atmosphere storage are also discussed.     

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at V _ds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for V _ds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.     

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

In this paper, a high-power GaN/AlGaN/GaN high electron mobility transistor (HEMT) has been demonstrated. A thick cap layer has been used to screen surface states and reduce dispersion. A deep gate recess was used to achieve the desired transconductance. A thin SiO/sub 2/ layer was deposited on the drain side of the gate recess in order to reduce gate leakage current and improve breakdown voltage. No surface passivation layer was used. A breakdown voltage of 90 V was achieved. A record output power density of 12 W/mm with an associated power-added efficiency (PAE) of 40.5% was measured at 10 GHz. These results demonstrate the potential of the technique as a controllable and repeatable solution to decrease dispersion and produce power from GaN-based HEMTs without surface passivation.     

Effect of ohmic contacts on buffer leakage of GaN transistors

The effect of ohmic contacts on the buffer leakage of GaN transistors is presented. The buffer leakage for AlGaN/GaN high-electron mobility transistors and GaN MESFETs grown on the same underlying buffer was observed to be different. Controlled experiments show that the increased buffer leakage is due to the nature of the alloyed ohmic contacts and can be minimized if they are screened by the Si doping or by the two-dimensional electron gas.     

Effect of MgO in the microstructure formation of zirconia mullite composites from sillimanite and zircon

The effect of MgO additive on the structural, microstructural and hardness properties of zirconia mullite (MUZ) has been discussed. The MgO additive in MUZ not only stabilizes the cubic zirconia phase but also acts as a sintering aid for the formation of cross-linked mullite grains. The electron micrographs of plasma fused MgO–MUZ shows a uniform arrangement of platelet structure of mullite and dendrite structure of zirconia on mullite surface. The micrograph of plasma sintered composites shows a ladder like structure and a complete cross-linked mullite grains whereas the surface morphology of conventionally sintered composites clearly indicates the presence of small and big grains close packed to each other. Appreciable hardness and higher optical band gap have been observed for plasma fused MgO–MUZ composites. A complete dissociation of sillimanite and zircon has been occurred in plasma fused composites for the complete conversion of MUZ whereas the complete dissociation of sillimanite and zircon has not observed in plasma sintered and conventionally sintered composites. These observations have been realized from the X-ray diffraction and Fourier transform infrared studies.     

Pairing Fluctuations, the BCS–BEC Crossover and Strong Disorder in Superconductors

The mean field theory due to Bardeen, Cooper, and Schrieffer (BCS) provides the conceptual foundation of our understanding of superconductivity, but many examples over the last few decades have forced condensed matter physicists to extend the BCS framework. In particular, the extension to strong coupling, the BCS to Bose–Einstein condensation (BEC) crossover, requires the treatment of amplitude and phase fluctuations above the mean field state. Similarly, the presence of disorder can lead to strong inhomogeneity in the pairing amplitude, enhance phase fluctuations, and suppress the transition temperature. Finally, magnetic scattering quickly leads to a gapless superconducting state and then the loss of order. All of these involve physics beyond the BCS scenario. We employ a real space method that reduces to inhomogeneous mean field theory in the ground state, but fully retains the amplitude and phase fluctuations of the pairing field at finite temperature. This paper reviews some of our work in the weak to strong coupling (BCS–BEC) crossover, the disorder driven superconductor-insulator transition, and the role of magnetic impurities.