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111.
Low supply voltage high-performance CMOS current mirror with low input and output voltage requirements 总被引:1,自引:0,他引:1
Ramirez-Angulo J. Carvajal R.G. Torralba A. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2004,51(3):124-129
This paper presents a scheme for the efficient implementation of a low supply voltage continuous-time high-performance CMOS current mirror with low input and output voltage requirements. This circuit combines a shunt input feedback and a regulated cascode output stage to achieve low input resistance and very high output resistance. It can be used as a high-precision current mirror in analog and mixed signal circuits with a power supply close to a transistor's threshold voltage. The proposed current mirror has been simulated and a bandwidth of 40 MHz has been obtained. An experimental chip prototype has been sent for fabrication and has been experimentally verified, obtaining 0.15-V input-output voltage requirements, 100-/spl Omega/ input resistance, and more than 200-M/spl Omega/ (G/spl Omega/ ideally) output resistance with a 1.2-V supply in a standard CMOS technology. 相似文献
112.
Demiguel S. Giraudet L. Joulaud L. Decobert J. Blache F. Coupe V. Jorge F. Pagnod-Rossiaux P. Boucherez E. Achouche M. Devaux F. 《Lightwave Technology, Journal of》2002,20(12):2004-2014
The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes. 相似文献
113.
Third generation (3G) mobile communication systems are now just starting to be introduced. With a maximum data rate of 2 Mbit/s they will make wireless access to broadband data services like the Internet or video applications feasible. Most of the different physical layer technologies summarised under the acronym 3G are based on wideband-CDMA (W-CDMA), in contrast to existing second generation systems, which mostly use TDMA and FDMA. This has severe consequences for the design of the transceiver front-ends. During standardisation these were assumed to have an adequate RF performance yet they still present a performance bottleneck for the system. Starting with a short introduction to UMTS (Universal Mobile Telecommunications System)-the 3G standard to be deployed in Europe and already operating in Japan-this paper describes by way of example some of the test cases specified for UMTS and their impact on the analogue front-end. It is shown that accurate simulation of all the analogue and digital signal processing is necessary in order to predict the RF performance needed of today's commercial RFICs. The paper then presents and reviews some actual design examples. Finally, possible technologies and techniques for application in future mobile terminals are discussed 相似文献
114.
An ideal broadband beamformer requires an increased number of taps for each filter, which in turn increases the complexity of the design. It is shown that for angles near the broadside of the antenna the beamforming is more accurate compared to the angles near the endfire, and it is advantageous to use recursive filters combined with a computed number of zeros for angles near the endfire. The proposed method is used for estimating the arrival angle of the incoming signals and displays uniform accuracy for all angles 相似文献
115.
Martinez-Munoz D. Rosa-Zurera M. Cruz-Roldan F. Lopez-Ferreras F. Ruiz-Reyes N. 《Electronics letters》2002,38(16):932-933
The problem of computing, in a subband audio coder, the maximum quantisation noise power that can be injected in each band to ensure transparent coding when low selectivity filter banks are used, is addressed. A low complexity strategy, taking into account the frequency responses of the synthesis filter bank, is proposed for achieving an overall distortion due to quantisation noise always below the masking threshold (provided by a psycho-acoustic model) for any length prototype filters. 相似文献
116.
Mine K. Kubota N. Morimoto F. Sanada M. Zhang Qi 《Electromagnetic Compatibility, IEEE Transactions on》1994,36(3):253-255
This short paper discusses the method of effectively canceling equal status normal mode noise not only on a sensor line but also on a transmission line of an optical instrument using a sensor with a sensordummy resistance 相似文献
117.
Crosstalk between microstrip transmission lines 总被引:1,自引:0,他引:1
Hill D.A. Cavcey K.H. Johnk R.T. 《Electromagnetic Compatibility, IEEE Transactions on》1994,36(4):314-321
Methods for prediction of crosstalk between microstrip transmission lines are reviewed and simplified for the weak-coupling case. Classical coupled transmission line theory is used for uniform lines, and potential and induced EMF methods are used for crosstalk between nonuniform lines. It is shown that the potential method is equivalent to classical coupled transmission line theory for the case of uniform lines. An experiment was performed for uniform coupled microstrip lines for frequencies from 50 MHz to 5 GHz, and good agreement between theory and measurement was obtained for both near- and far-end crosstalk 相似文献
118.
1/f noise sources 总被引:2,自引:0,他引:2
This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an α value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on α, α may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The α values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices 相似文献
119.
A. A. Kovalev A. F. Kotyuk B. N. Levinskii A. A. Liberman 《Measurement Techniques》1994,37(2):151-158
The authors survey published results on the application of metal diffraction gratings as laser power or energy dividers when the laser beam is split into two approximately equal pans. The normal incidence of laser radiation on metal diffraction gratings of various profiles in the case of three propagating diffraction orders n=0, ±1 is discussed, along with the case of oblique incidence with only two propagating diffraction orders n=0 and n =–1.Translated from Izmeritel'naya Tekhnika, No. 2, pp. 22–26, February, 1994. 相似文献
120.
Carroll R.D. Merritt S.W. Branciforte E.J. Tanski W.J. Cullen D.E. Sacks R.N. 《IEEE transactions on ultrasonics, ferroelectrics, and frequency control》1994,41(3):416-418
Heterostructure Acoustic Charge Transport (HACT) devices have been fabricated with a new nondestructive sense (NDS) electrode structure that provides for the recovery of base-band signals without the use of an integrating capacitor. This electrode structure provides an output signal comprising an RF carrier at the SAW frequency, amplitude modulated by the sampled input signal which has been delayed by a period proportional to the output electrodes distance from the input diode. The output of the NDS electrode structure is subsequently demodulated to provide the base-band signal 相似文献