Structure of TiC-Ni coatings synthesized by activated reactive evaporation

TiC-Ni coatings were produced by evaporation of a Ti-Ni billet in the presence of a partial pressure of C₂H₂ to produce a TiC-Ni deposit using the activated reactive evaporation process. The coatings were characterized by X-ray diffraction and optical, scanning and transmission electron microscopy as well as by microhardness measurements. The microstructure consists of a dispersion of very fine particles of Ti₂Ni and Ni-Ti solid solution in a TiC matrix. The grain size of the TiC can be controlled by varying the deposition temperature. This microstructure might be highly desirable for increasing the toughness of ceramic coatings.     

Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO2/high-k gate stacked dielectric

A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of great importance. In this paper we have explored the gate tunneling current of a double gate junctionless transistor(DGJLT) for the first time through an analytical model, to meet the future requirement of expected high-k gate dielectric material that could replace SiO₂. We therefore present the high-k gate stacked architecture of the DGJLT to minimize the gate tunneling current. This paper also demonstrates the impact of conduction band offset, workfunction difference and k-values on the tunneling current of the DGJLT.     

Analog and RF performance of doping-less tunnel FETs with $$\hbox {Si}_{0.55} \hbox {Ge}_{0.45}$$ source

This paper reports studies of a doping-less tunnel field-effect transistor (TFET) with a \(\hbox {Si}_{0.55} \hbox {Ge}_{0.45}\) source structure aimed at improving the performance of charge-plasma-based doping-less TFETs. The proposed device achieves an improved ON-state current (\(I_{{\mathrm{ON}}} \sim {4.88} \times {10}^{-5}\,{\mathrm{A}}/\upmu {\mathrm{m}}\)), an \(I_\mathrm{ON}/I_\mathrm{OFF}\) ratio of \({6.91} \times {10}^{12}\), an average subthreshold slope (\(\hbox {AV-SS}\)) of \(\sim \) \({64.79}\,{\mathrm{mV/dec}}\), and a point subthreshold slope (SS) of 14.95 mV/dec. This paper compares the analog and radio of frequency (RF) parameters of this device with those of a conventional doping-less TFET (DLTFET), including the transconductance (\(g_{{\mathrm{m}}}\)), transconductance-to-drain-current ratio \((g_\mathrm{m}/I_\mathrm{D})\), output conductance \((g_\mathrm{d})\), intrinsic gain (\(A_{{\mathrm{V}}}\)), early voltage (\(V_{{\mathrm{EA}}}\)), total gate capacitance (\( C_{{\mathrm{gg}}}\)), and unity-gain frequency (\(f_{{\mathrm{T}}}\)). Based on the simulated results, the \(\hbox {Si}_{0.55}\hbox {Ge}_{0.45}\)-source DLTFET is found to offer superior analog as well as RF performance.     

Initialization method for fuzzy Takagi–Sugeno systems

This paper presents a method for initializing Takagi–Sugeno fuzzy systems in which the initial values of fuzzy antecedents are obtained by dynamic decomposition of the input space while the consequent values are obtained by the recursive least squares method. The results of experiments on 13 datasets from the KEEL repository are described. The results of approximating these datasets by the proposed method are compared with those obtained by five well-known identification algorithms..     

Analog performance investigation of dual electrode based doping-less tunnel FET

In this paper, we have proposed a device and named it dual electrode doping-less TFET (DEDLTFET), in which electrodes on top and bottom of source and drain are considered to enhance the ON state current and Analog performances. The charge plasma technique is used to generate electron’s and hole’s clouding depending upon their respective work functions at top and bottom of source/drain electrode. Band-to-band-tunneling rate is similar on both sides of source-channel junctions, which increases ON state current. The analog performance parameters of DEDLTFET are investigated and using device simulation the demonstrated characteristics are compared with doping-less (DLTFET) and the conventional doped double gate TFET (DGTFET), such as transconductance \((\hbox {g}_\mathrm{m})\), transconductance to drain current ratio \((\hbox {g}_\mathrm{m}/\hbox {I}_\mathrm{D})\), output-conductance (g\(_{d})\), output resistance \((\hbox {r}_\mathrm{d})\), early voltage \((\hbox {V}_\mathrm{EA})\), intrinsic gain \((\hbox {A}_\mathrm{V})\), total gate capacitance \((\hbox {C}_\mathrm{gg})\) and unity gain frequency \((\hbox {f}_\mathrm{T})\). From the simulation results, it is observed that DEDLTFET has significantly improved analog performance as compared to DGTFET and DLTFET.     

An unusual congenital nasopharyngeal teratoma

A supine technique for reducing posterior dislocations of the hip is presented. We believe this technique provides more controlled traction than do other maneuvers and have found it to be a safe and effective method to reduce the posteriorly dislocated hip.     

Morphological changes occurring during reduction of WO3

The morphological changes occurring during the reduction of WO₃ seem to be quite unique. The initial reduction of WO₃ results in large plate-like whiskers of WO_2.72 of two morphologies, randomly oriented whiskers and clusters of whiskers. These decompose to form agglomerates of WO₂ (containing several small primary crystals), interlinked by chains of larger primary grains. The final reduction of WO₂ to tungsten is achieved without any further morphological change. From these observations it seems that formation of whiskers of WO_2.72 is the controlling step, in determining the final particle size of the tungsten powder.