Continuous phase quadrature phase shift keyed signaling techniquewith coding

A continuous phase quadrature phase shift keyed (CPQPSK) modulation technique is presented. This method utilizes a conventional QPSK modulator and a phase trajectory converter to approximate M=4, h=1/4 continuous phase signal and allows low cost, low complexity, and high rate (>1 Gbit/s) CPM modem implementation for bandwidth efficient transmission through nonlinear satellite channels. Using a communications analysis computer program it has been found that CPQPSK has 99 percent out-of-band power of 0.8R (MSK has 99 percent out-of-band power of 1.2 R where R is defined as bit rate), continuous phase trajectories, and nearly constant envelope amplitude. Simulation of realistic hardware designs indicate that the CPQPSK will require an Eb/No of 14 dB to achieve a bit error rate (BER) of 10^-6. Forward error correcting techniques using block codes with an overhead of 10 percent indicate that the Eb/No requirements can be reduced to 11.2 dB for 10^-6 BER     

The Athy—Heckel equation applied to granular agglomerates of basic tricalcium phosphate [3Ca3PO4)2·Ca(OH)2]

It is shown that direct compression grade tricalcium phosphate yields linear Heckel plots only if the particle density used is that obtained by liquid pycnometry or mercury porosimetry. If the true density is used (i.e. that obtained by gas displacement), then linearization is not obtained in a pressure range where bonding evidently occurs. It is shown that the pore volume in the range of diameters from 0.5 to 2 μm decreases as tableting pressure increases, and that bonding is associated with the loss of pores of this size.     

Half-bridge inverter using 4H-SiC gate turn-off thyristors

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices     

Using motion from orthographic views to verify 3-D point matches

The specific problem addressed by the authors is how to detect the true match of a fourth point from among candidate matches in a situation in which three points have already been matched. The two sets of points to be matched are both subject to measurement errors. The depth error is more dominant than errors in the other two coordinates; however, the exact statistical distribution of the measurement errors is not known. The authors present a new method for solving the problem. The method is based on the technique of motion analysis using orthographic views. It discards the noisy z (depth) coordinates and uses only the x and y coordinates of the points to verify the match. The effect of depth errors on the motion estimate is completely prevented. Results show that this method is substantially more effective than previous methods that use all three coordinates     

Verification of a model for estimating the void fraction in a three-component randomly packed bed

The void fraction in a three-component randomly packed bed was calculated from the authors' model, and the calculated values were compared with published experimental data for spherical and irregularly shaped particles and with results from computer simulations. Results from the model were in good agreement with simulated and published experimental data.     

Interactions of electron beams with surfaces of MgO crystals

The strong interaction of electrons with the flat surfaces of small crystals has been investigated by high resolution CTEM and STEM instruments. When cubic crystals of MgO smoke with edges 20–300 nm are oriented so that the ?001? or ?011? zone axis is parallel to the optical axis, then two kinds of external fringes are observed at (100) surfaces. One kind is parallel to the surface, having spacings up to 0.4 nm. These are caused by interference among the electron channelled along the surface. Fresnel-diffracted ones and the remnant of the incident beam. Fringes of the other kind, which appear as fine structure in the first kind of fringes, are perpendicular to the crystal edge. When an electron beam is parallel to the ?011? axis, the second kind of fringe, whose spacing is 0.3 nm corresponding to d₀₁₁, shows the difference of the surface potential between magnesium atoms and oxygen atoms. Selected area diffraction patterns and microdiffraction patterns also show the same periodicities as in the two kinds of fringes. Simulated images, using the scattering amplitudes for ions, are compared with observations.