Unprecedented Homoleptic Bis‐Tridentate Iridium(III) Phosphors: Facile,Scaled‐Up Production,and Superior Chemical Stability

Bis‐tridentate Ir(III) metal complexes are expected to show great potential in organic light‐emitting diode (OLED) applications due to the anticipated, superb chemical and photochemical stability. Unfortunately, their exploitation has long been hampered by lack of adequate methodology and with inferior synthetic yields. This hurdle can be overcome by design of the first homoleptic, bis‐tridentate Ir(III) complex [Ir(pzpyph)(pz^Hpyph)] ( 1 ), for which the abbreviation (pzpyph)H (or pz^Hpyph) stands for the parent 2‐pyrazolyl‐6‐phenyl pyridine chelate. After that, methylation and double methylation of 1 afford the charge‐neutral Ir(III) complex [Ir(pzpyph)(pz^Mepyph)] ( 2 ) and cationic complex [Ir(pz^Mepyph)₂][PF₆] ( 3 ), while deprotonation of 1 gives formation of anionic [Ir(pzpyph)₂][NBu₄] ( 4 ), all in high yields. These bis‐tridentate Ir(III) complexes 2 – 4 are highly emitted in solution and solid states, while the charge‐neutral 2 and corresponding t ‐butyl substituted derivative [Ir(pzpy^Buph)(pz^Mepy^Buph)] ( 5 ) exhibit superior photostability versus the tris‐bidentate references [Ir(ppy)₂(acac)] and [Ir(ppy)₃] in toluene under argon, making them ideal OLED emitters. For the track record, phosphor 5 gives very small efficiency roll‐off and excellent overall efficiencies of 20.7%, 66.8 cd A^?1, and 52.8 lm W^?1 at high brightness of 1000 cd m^?2. These results are expected to inspire further studies on the bis‐tridentate Ir(III) complexes, which are judged to be more stable than their tris‐bidentate counterparts from the entropic point of view.     

Majority and minority carrier traps in monocrystalline CulnSe2

Electron and hole traps in Bridgman-grown monocrystalline CuInSe₂ were investigated by carrying out deep level transient spectroscopy measurements on homojunctions, Al-CuInSe₂ (p-type), and Au-CuInSe₂ (n-type) Schottky junctions. Three hole trap levels and two electron trap levels were observed on these devices. Effects of oxygen and etching on the electron trap level at 182 ±15 meV from the conduction band edge were specifically studied. It was found that the election trap densities in the homojunctions prepared using the CuInSe₂ samples treated in NH₂NH₂ solution, which absorbes oxygen atoms in the samples, were larger than the electron trap densities in the homojunctions prepared using untreated samples. Moreover, the electron trap densities in the homojunctions after prolonged heat treatment in O₂ were less than that without prolonged heat treatment. The results thus suggested that oxygen atoms in CuInSe₂ can reduce the electron trap density of p-type CuInSe₂. The effects of chemical etching on these electron traps were also studied. The excess indium atoms in the CuInSe₂ were considered to affect the electron traps.     

MSN: statistical understanding of broadcasted baseball video using multi-level semantic network

The information processing of sports video yields valuable semantics for content delivery over narrowband networks. Traditional image/video processing is formulated in terms of low-level features describing image/video structure and intensity, while the high-level knowledge such as common sense and human perceptual knowledge are encoded in abstract and nongeometric representations. The management of semantic information in video becomes more and more difficult because of the large difference in representations, levels of knowledge, and abstract episodes. This paper proposes a semantic highlight detection scheme using a Multi-level Semantic Network (MSN) for baseball video interpretation. The probabilistic structure can be applied for highlight detection and shot classification. Satisfactory results will be shown to illustrate better performance compared with the traditional ones.     

Microstrip stepped impedance resonator bandpass filter with an extended optimal rejection bandwidth

Bandpass filters with an optimal rejection bandwidth are designed using parallel-coupled stepped impedance resonators (SIRs). The fundamental (f/sub o/) and higher order resonant harmonics of an SIR are analyzed against the length ratio of the high-Z and low-Z segments. It is found that an optimal length ratio can be obtained for each high-Z to low-Z impedance ratio to maximize the upper rejection bandwidth. A tapped-line input/output structure is exploited to create two extra transmission zeros in the stopband. The singly loaded Q(Q/sub si/) of a tapped SIR is derived. With the aid of Q/sub si/, the two zeros can be independently tuned over a wide frequency range. When the positions of the two zeros are purposely located at the two leading higher order harmonics, the upper rejection band can be greatly extended. Chebyshev bandpass filters with spurious resonances up to 4.4f/sub o/, 6.5f/sub o/, and 8.2f/sub o/ are fabricated and measured to demonstrate the idea.     

Gigabit Ethernet switches using a shared buffer architecture

Gigabit Ethernet networks have seen great demand in recent years. This growth was fueled by both an increase in port speed at the client side and new applications in MAN and WAN space. In this article, we report a highly integrated Ethernet switch IC design that supports 12 gigabit ports and one 10 Gb port. All packet memory and search memory are integrated on chip. A deeply pipelined structure with parallel memory access is employed to achieve wirespeed search performance. A flexible policy engine is designed to allow packet filtering and modification. A novel tail buffer architecture is proposed to address the variable packet length issue in the shared buffer architecture. Custom mixed-signal circuits are incorporated to implement the 10G Ethernet interface in XGMII. The chip integrates 70 million transistors in a 16 mm /spl times/ 15 mm die using 0.18 /spl mu/m CMOS technology. The chip has been tested to verify the wirespeed searching and switching performance.     

Defect reduction in Hg1−xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B

A study on preparation of Cd_0.96Zn_0.04Te(211)B substrates for growth of Hg_1−xCd_xTe epitaxial layers by molecular beam epitaxy (MBE) was investigated. The objective was to investigate the impact of starting substrate surface quality on surface defects such as voids and hillocks commonly observed on MBE Hg_1−xCd_xTe layers. The results of this study indicate that, when the Cd_0.96Zn_0.04Te(211)B substrates are properly prepared, surface defects on the resulting MBE Hg_1−xCd_xTe films are reduced to minimum (size, ∼0.1 m and density ∼500/cm²) so that these MBE Hg_1−xCd_x Te films have surface quality as good as that of liquid phase epitaxial (LPE) Hg_1−xCd_xTe films currently in production in this laboratory.     

An X-band high-efficiency MMIC power amplifier with 20-dBreturn losses

Describes the design principles and measured performance of an X-band high-efficiency monolithic-microwave-integrated-circuit (MMIC) power amplifier and discuss pertinent factors of the ion-implantation process. Also presented is a worst-case power prediction of the chip performance and a large-signal design using small-signal simulation. This balanced amplifier is fully monolithic with input and output return losses of better than 20 dB provided by Lange couplers. These return losses make it very convenient to cascade with other components. For high-efficiency operation, the drain voltage is 6 V. Across the 40% bandwidth from 8 to 12 GHz, the amplifier produces 1.6 to 2.1 W of output power at 33 to 40% power-added efficiency. For high-power operation, the drain voltage is 8.5 V. The amplifier can produce 2.4 to 2.8 W of output power at 26 to 29% power-added efficiency across the same 40% bandwidth     

Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

A series of n-type, indium-doped Hg_1−xCd_xTe (x∼0.225) layers were grown on Cd_0.96Zn_0.04Te(311)B substrates by molecular beam epitaxy (MBE). The Cd_0.96Zn_0.04Te(311)B substrates (2 cm × 3 cm) were prepared in this laboratory by the horizontal Bridgman method using double-zone-refined 6N source materials. The Hg_1−xCd_xTe(311)B epitaxial films were examined by optical microscopy, defect etching, and Hall measurements. Preliminary results indicate that the n-type Hg_1−xCd_xTe(311)B and Hg_1−xCd_xTe(211)B films (x ∼ 0.225) grown by MBE have comparable morphological, structural, and electrical quality, with the best 77 K Hall mobility being 112,000 cm²/V·sec at carrier concentration of 1.9×10⁺¹⁵ cm⁻³.     

Tunable Capacitor Based on Polymer-Dispersed Liquid Crystal for Power Harvesting Microsystems

A tunable capacitor based on polymer-dispersed liquid-crystal (PDLC) technology is presented in this paper. Its application for robust power harvesting microsystems was investigated. The power harvesting device utilized a piezoelectric microcantilever excited by ambient random vibrations to convert mechanical energy into electric power. For improving the power harvesting efficiency, the PDLC tunable capacitor was used to adjust the resonance frequency of the piezoelectric microcantilever beam to match the frequency of the ambient vibrations in real time. The fabrication process and measurement results of the PDLC tunable capacitor are detailed. The measured tuning ratio of the PDLC tunable capacitor was 63% at 300-Hz excitation frequency when a 25-V driving voltage was applied. The dielectric and optical properties of the fabricated PDLC tunable capacitor have been examined thoroughly. Based on the results of the experiment, an equivalent lumped-element model of the PDLC tunable capacitor has been developed. The simulation results showed that the impedance of the developed model agreed well with that of the fabricated tunable capacitor. This model can be incorporated into the equivalent circuit of the integrated power harvesting system for efficiency optimization.     

Performance of handoff algorithm based on distance and RSSI measurements

The performance of a proposed handoff algorithm based on both the distance of a mobile station to neighboring base stations and the relative signal strength measurements is evaluated. The algorithm performs handoff when the measured distance from the serving base station exceeds that from the candidate base station by a given threshold and if the measured signal strength of the adjacent base station exceeds that of the serving base station by a given hysteresis level. The average handoff delay and average number of handoffs are used as criteria for performance. Numerical results are presented to demonstrate the feasibility of the distance-based handoff algorithm, including results for an additional criterion based on relative signal strength. The proposed algorithm is compared with an algorithm based on absolute and relative signal strength measurements and with a solely distance-based algorithm. It is found that the proposed handoff algorithm performs well in a log-normal fading environment when the distance estimate error is modeled by wide-sense stationary additive white Gaussian noise.