Human body detection in wet snowpack by an FM-CW radar

An FM-CW radar system was applied to detect a human body buried in a very wet snowpack. This radar uses the L-band microwave frequency with a maximum output power of 100 mW, and utilizes digital signal processing techniques. Field experiments were carried out to detect and map a human body embedded at a depth of 125 cm in a natural snowpack. The radar is shown to have a potential ability to detect avalanche victims, indicating that it may become a tool for snow rescuer operations     

Feature selection by analyzing class regions approximated byellipsoids

In their previous work, the authors have developed a method for selecting features based on the analysis of class regions approximated by hyperboxes. They select features analyzing class regions approximated by ellipsoids. First, for a given set of features, each class region is approximated by an ellipsoid with the center and the covariance matrix calculated by the data belonging to the class. Then, similar to their previous work, the exception ratio is defined to represent the degree of overlaps in the class regions approximated by ellipsoids. From the given set of features, they temporally delete each feature, one at a time, and calculate the exception ratio. Then, the feature whose associated exception ratio is the minimum is deleted permanently. They iterate this procedure while the exception ratio or its increase is within a specified value by feature deletion. The simulation results show that the current method is better than the principal component analysis (PCA) and performs better than the previous method, especially when the distributions of class data are not parallel to the feature axes     

我国卫星测控系统发展概况及几点建议

本文介绍了我国国内C频段、国际C频段两个卫星测控网站,三代典型微波统一测控系统的特点,提出了对新型航天测控设备研制的建议。     

1-GHz-spaced 16-channel arrayed-waveguide grating for a wavelength reference standard in DWDM network systems

We fabricated a 1-GHz-spaced 16-channel arrayed-waveguide grating (AWG) by using a new AWG configuration where the path of each arrayed waveguide winds backward and forward across a 4-in diameter wafer without crossing any other waveguides. The ultra-narrow (< 1 GHz) and stable transmission bands of this AWG can be used to construct a wavelength reference standard covering the S, C, and L bands in the dense wavelength-division-multiplexing network systems whose frequency deviation is /spl plusmn/160 MHz.     

Purification of metallurgical‐grade silicon up to solar grade

An estimate has been made of the feasibility of a metallurgical purification process, the NEDO (New Energy and Industrial Technology Development Organization) melt‐purification process, for manufacturing solar‐grade silicon from metallurgical‐grade silicon. Equipment has been developed to pilot manufacturing plant scale. The system comprises an electron‐beam furnace for phosphorus removal and a plasma furnace for boron removal. Each furnace has a mold for directional solidification to remove metallic impurities. The concentration of each impurity in the silicon ingot purified through the whole process satisfied the solar‐grade level. The Solar‐grade silicon produced showed p‐type polarity and resistivity within the range 0·5–1·5 Ω cm. Copyright © 2001 John Wiley & Sons, Ltd.     

10-GHz-spaced 1010-channel tandem AWG filter consisting of oneprimary and ten secondary AWGs

A very large channel-count arrayed waveguide grating (AWG) filter with more than 1000 channels is described. It was achieved by cascading a 1-THz-spaced flat-top 1×10 AWG as a primary filter and ten 10-GHz-spaced 1×160 AWGs as secondary filters in a tandem configuration. We achieved good adjacent and accumulated channel crosstalk values ranging from -32 to -25 dB and from -24 and -18 dB, respectively     

Short channel characteristics of quasi-single-drain MOSFETs

It is clearly demonstrated that source/drain (S/D) elevation is remarkably effective in suppressing the short channel effect against the shrinkage of gate sidewall spacers in MOSFETs. Even if the gate sidewall width is reduced to as very thin as 15 nm, the short channel effect is effectively suppressed by means of the highly elevated S/D regions (80 nm in the present case), though the characteristics of conventional MOSFETs are drastically degraded. This result is explained in terms of the fact that the serious influence due to the deep S/D implantation is suppressed by the formation of a quasi-single-drain configuration. Furthermore, the parasitic S/D resistance decrease, which will bring about drivability enhancement, was observed for reduction in the sidewall width. These favorable experimental results may indicate the definite necessity of elevated S/D engineering for future ultrashort MOSFETs     

Junction capacitance reduction due to self-aligned pocketimplantation in elevated source/drain NMOSFETs

A new advantage of an elevated source/drain (S/D) configuration to improve MOSFET characteristics is presented. By adopting pocket implantation into an elevated S/D structure which was formed by Si selective epitaxial growth and gate sidewall removal, we demonstrate that the parasitic junction capacitance as well as the junction leakage was significantly reduced for an NMOSFET while maintaining its good short channel characteristics. These successful results are attributed to the modification of the boron impurity profile in the deep S/D regions. The capacitance reduction rate, furthermore, was more remarkable as the pocket dose was further increased. This means that the present self-aligned pocket implantation is very promising for future MOSFETs with a very short gate length, where high pocket dosage will be required to suppress the short channel effect     

Transmission and attenuation of the dominant mode in uniformly bentcircular hollow waveguides for the infrared: scalar analysis

A numerical evaluation is conducted of electric field distributions, phase constants, and attenuation constants of the lowest eigenmode in the general class of uniformly bent circular hollow waveguides. The analysis is based on a scalar equation, and numerical results are compared with those of existing approximate theories. Normalized forms of attenuation constants are presented for the parallel and perpendicular polarizations to the bending plane by using structural and material parameters. For sharply bent waveguides, useful and simple expressions are derived for the attenuation constants of the TE and TM modes in the corresponding slab geometry with suitable weighting parameters     

Thin oxide films of silicon by high pressure oxidation

High pressure oxidation of silicon was performed at an oxidation temperature range of 650 to 800°C for thin oxide films with about 300 å thickness. The index of refraction was dependent on an oxidation temperature but independent of the oxidation pressure as 1.475 at 750°C. The dielectric breakdown strength of the oxide film was measured by the voltage ramping,method. The fixed oxide charge about 1.0 × 10¹¹ cm^?2 was also measured from the high frequency C-V measurement. The pulse scanning C-V measurement technique was used to measure the minority carrier generation rate in the depleted surface. The surface generation velocity was slightly dependent on the oxidation temperature and indicated that the fast surface states increased with decreasing oxidation temperature.