Feature‐Based Relation Classification Using Quantified Relatedness Information

Feature selection is very important for feature‐based relation classification tasks. While most of the existing works on feature selection rely on linguistic information acquired using parsers, this letter proposes new features, including probabilistic and semantic relatedness features, to manifest the relatedness between patterns and certain relation types in an explicit way. The impact of each feature set is evaluated using both a chisquare estimator and a performance evaluation. The experiments show that the impact of relatedness features is superior to existing well‐known linguistic features, and the contribution of relatedness features cannot be substituted using other normally used linguistic feature sets.     

Noun Sense Identification of Korean Nominal Compounds Based on Sentential Form Recovery

In a machine translation system, word sense disambiguation has an essential role in the proper translation of words when the target word can be translated differently depending on the context. Previous research on sense identification has mostly focused on adjacent words as context information. Therefore, in the case of nominal compounds, sense tagging of unit nouns mainly depended on other nouns surrounding the target word. In this paper, we present a practical method for the sense tagging of Korean unit nouns in a nominal compound. To overcome the weakness of traditional methods regarding the data sparseness problem, the proposed method adopts complement‐predicate relation knowledge that was constructed for machine translation systems. Our method is based on a sentential form recovery technique, which recognizes grammatical relationships between unit nouns. This technique makes use of the characteristics of Korean predicative nouns. To show that our method is effective on text in general domains, the experiments were performed on a test set randomly extracted from article titles in various newspaper sections.     

A design of a high-speed and high-efficiency capsule endoscopy system

This paper presents a high-speed and high-efficiency capsule endoscopy system. Both a transmitter and a receiver were optimized for its application through an analysis of the human body channel. ON-OFF keying modulation is utilized to achieve low power consumption of the in-body transmitter. A low drop output regulator is adopted to prevent performance degradation in the event of a voltage drop in the battery. The receiver adopts superheterodyne structure to obtain high sensitivity, considering the link budget from the previous analysis. The receiver and transmitter were fabricated using the CMOS 0.13-μm process. The output power of the transmitter is -1.6 dB·m and its efficiency is 27.7%. The minimum sensitivity of the receiver is -80 dB·m at a bit error ratio (BER) of 3 × 10 (-6). An outer wall loop antenna is adopted for the capsule system to ensure a small size. The integrated system is evaluated using a liquid human phantom and a living pig, resulting in clean captured images.     

Low energy electron excited nanoscale luminescence spectroscopy of erbium doped AIN

We have investigated the optical activity of Er³⁺ ions in AlN via depth-resolved, (5 nm to 250 nm), low energy electron-excited nanoscale (LEEN) luminescence spectroscopy and compared it with the luminescence of an Er-free AlN film. For the Er-free film, there was no emission in the IR from the AlN at any depth, and at higher energies we measured only a broad, weak feature between 1.7–3.25 eV along with an O defect related feature at 3.8 eV, which is significantly enhanced toward the surface. We found strong emission in the AlN:Er films from the first excited → ground state transition of Er³⁺ at 0.80 eV along with many other excited state transitions, although the features are broad compared to those of GaN:Er. The AlN:Er luminescence saturates near a concentration of 10²¹ cm⁻³, at which point we also observe enhanced O defect related luminescence uniformly distributed throughout the film. This finding suggests a role for O in activating the Er at low Er concentrations, while inhibiting the Er activity at high O concentrations.     

Thin-film encapsulation of top-emission organic light-emitting devices with polyurea/Al2O3 hybrid multi-layers

We developed a room-temperature encapsulation process based on multi-stack of ultra thin Al₂O₃ and polyurea layers for top-emission organic light-emitting devices (TEOLEDs). Device structure, including a capping layer for refractive-index matching and a thick polyurea buffer layer, was optimized to enhance light extraction without distorting electroluminescence spectrum. The efficiency of a TEOLED encapsulated with 5 pairs of Al₂O₃(50 nm)/polyurea(20 nm) layers was better than that of a glass-encapsulated TEOLED, whereas their color coordinates were almost identical. Moreover, the half-decay lifetime of a TEOLED encapsulated with 5 pairs of Al₂O₃/polyurea layers was 86% of that of a glass-encapsulated TEOLED. Water vapor transition rate of 5 pairs of Al₂O₃(50 nm)/polyurea(20 nm) layers on PET film was measured as low as 5 × 10⁻⁴ g/m² day.     

Mergers and Acquisitions in the Telecommunications Industry: Myths and Reality

This paper investigates how market participants react to mergers and acquisitions (M&As) involving telecommunications companies. The empirical evidence suggests that such activities convey bad news to the market. This is consistent with the synergy trap hypothesis and extant empirical findings of value‐reducing diversification strategies in recent literature. The evidence also indicates that a cross‐border, rather than a domestic M&A deal, is the main driver of the negative market reaction. Further, our evidence of negative impacts on the bidder's business after an M&A reinforces our main finding that market participants, on average, perceive M&A activities to be detrimental to shareholder value. This suggests that value creation or synergy through an M&A deal is not warranted even though it can generate an increase in size of the firm.     

Microstructure and Electrical Properties of Low Temperature Processed Ohmic Contacts to p‐Type GaN

With Ni/Au and Pd/Au metal schemes and low temperature processing, we formed low resistance stable Ohmic contacts to p‐type GaN. Our investigation was preceded by conventional cleaning, followed by treatment in boiling HNO₃:HCl (1:3). Metallization was by thermally evaporating 30 nm Ni/15 nm Au or 25 nm Pd/15 nm Au. After heat treatment in O₂ + N₂ at various temperatures, the contacts were subsequently cooled in liquid nitrogen. Cryogenic cooling following heat treatment at 600 ·C decreased the specific contact resistance from 9.84·10^?4 Ωcm² to 2.65·10^?4 Ωcm² for the Ni/Au contacts, while this increased it from 1.80·10^?4 Ωcm² to 3.34·10^?4 Ωcm² for the Pd/Au contacts. The Ni/Au contacts showed slightly higher specific contact resistance than the Pd/Au contacts, although they were more stable than the Pd contacts. X‐ray photoelectron spectroscopy depth profiling showed the Ni contacts to be NiO followed by Au at the interface for the Ni/Au contacts, whereas the Pd/Au contacts exhibited a Pd:Au solid solution. The contacts quenched in liquid nitrogen following sintering were much more uniform under atomic force microscopy examination and gave a 3 times lower contact resistance with the Ni/Au design. Current‐voltage‐temperature analysis revealed that conduction was predominantly by thermionic field emission.     

Signaling and Control Procedures Using Generalized MPLS Protocol for IP over an Optical Network

This paper reviews the existing research activities on signaling and control procedures for IP over optical networks. We focus on the IP‐centric signaling and control architecture based on the generalized multi‐protocol label switching (GMPLS) protocol and analyze various scenarios and technical issues for deploying the IP over an optical network. We analyze the signaling and operations and administration and maintenance requirements for integrating an IP network and an optical network in order to cope with the high bandwidth and poor resource granularity of the optical network, including the optical cross‐connect system. On the basis of network architecture and a reference configuration model, we investigate the GMPLS‐based control architecture and interconnection model appropriate for controlling IP bandwidth and optical lambda resources. The signaling and control procedure based on GMPLS on optical user‐network interface and network‐network interface are comparatively investigated to provide the optical lightpath. We also study protection and restoration procedures to protect link failure when it applies to GMPLS signaling.     

All‐Carbon Nanotube‐Based Flexible Field‐Emission Devices: From Cathode to Anode

The fabrication of a flexible field‐emission device (FED) using single‐walled carbon nanotube (SWNT) network films as the conducting electrodes (anode and cathode) and thin multi‐walled CNT/TEOS hybrid films as the emitters is reported. P‐type doping with gold ions and passivation with tetraethylorthosilicate (TEOS) made the SWNT network film highly conductive and environmentally stable, and hence a good alternative to conventional indium tin oxide electrodes. CNT/TEOS hybrid emitters showed high current density, low turn‐on field, and long‐term emission stability, compared with CNT emitters; these characteristics can be attributed to the TEOS sol, acting both as a protective layer surrounding the nanotube tip, and as an adhesive layer enhancing the nanotube adhesion to the substrate. All‐CNT‐based flexible FEDs fabricated by this approach showed high flexibility in field emission characteristics and extremely bright electron emission patterns.     

Switched‐Capacitor Variable Gain Amplifier with Operational Amplifier Preset Technique

We present a novel operational amplifier preset technique for a switched‐capacitor circuit to reduce the acquisition time by improving the slewing. The acquisition time of a variable gain amplifier (VGA) using the proposed technique is reduced by 30% compared with a conventional one; therefore, the power consumption of the VGA is decreased. For additional power reduction, a programmable capacitor array scheme is used in the VGA. In the 0.13 μm CMOS process, the VGA, which consists of three‐stages, occupies 0.33 mm² and dissipates 19.2 mW at 60 MHz with a supply voltage of 1.2 V. The gain range is 36.03 dB, which is controlled by a 10‐bit control word with a gain error of ±0.68 LSB.