Data retention characteristics of sub-100 nm NAND flash memory cells

In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.     

Web-based systems design: a study of contemporary practices and an explanatory framework based on “method-in-action”

This paper reports the findings of a detailed study of Web-based systems design (WBSD) practices in Ireland based on data collected over a 3-year period (2002–2005), the objectives of which were to (1) contribute towards a richer understanding of the current “real-world” context of WBSD by characterising the profile of a typical project (team size, timeframe, nature of requirements, etc.) and identifying the key challenges, constraints, and imperatives (i.e. “mediating factors”) faced by Web-based system designers, and (2) understand how those contextual parameters and mediating factors influence the activity of WBSD as regards the selection and enactment of whatever design practices are therefore engaged (i.e. the use of methods, procedures, etc.). Data was gathered through a survey which yielded 165 usable responses, and later through a series of semi-structured qualitative interviews. Using grounded theory, an explanatory conceptual framework is derived, based on an extension of the “method-in-action” model, the application of which to WBSD has not been previously investigated in depth. It is proposed that this framework of WBSD issues is valuable in a number of ways to educators, researchers, practitioners, and method engineers.     

Mechanism of simultaneous solutes separation and concentration by size exclusion cyclic separation

The semicontinuous separation/concentration of two solutes with different molecular size by the size exclusion cyclic separation method is based on the opposite swelling responses of two gels to a temperature change. Experimental results of separation and concentration of solutes are verified qualitatively by the theoretical models based on the local equilibrium assumption. Separation of two solutes is shown by the breakthrough curves in coupled gel columns. In closed coupled columns, the volumetric space for the large molecules which are totally excluded from the gels becomes smaller, creating a concentrating effect as the gels swell when temperature changes. A mechanistic model is suggested to predict the large molecule concentration to increase to its solubility limit as cycle repeats.     

Reduction of loading effect by tungsten etchback in a magneticallyenhanced reactive ion etcher

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology     

The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.